Ayelet Vilan

Molecular control over Au/GaAs diodes

The use of molecules to control electron transport is an interesting possibility, not least because of the anticipated role of molecules in future electronic devices. But physical implementations using discrete molecules are neither conceptually simple nor technically straightforward (difficulties arise in connecting the molecules to the macroscopic environment). But the use of molecules in electronic devices is not limited to single molecules, molecular wires or bulk material. Here we demonstrate that molecules can control the electrical characteristics of conventional metal–semiconductor junctions, apparently without the need for electrons to be transferred onto and through the molecules. We modify diodes by adsorbing small molecules onto single crystals of n-type GaAs semiconductor. Gold contacts were deposited onto the modified surface, using a ‘soft’ method to avoid damaging the molecules. By using a series of multifunctional molecules whose dipole is varied systematically, we produce diodes with an effective barrier height that is tuned by the molecules dipole moment. These barrier heights correlate well with the change in work function of the GaAs surface after molecular modification. This behaviour is consistent with that of unmodified metal–semiconductor diodes, in which the barrier height can depend on the metals work function.

Molecules on si: electronics with chemistry.

Basic scientific interest in using a semiconducting electrode in molecule-based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test-bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor-molecule electronics we need reproducible, high-yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide-free Si.describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified.investigate to what extent imperfections in the monolayer are important for transport across the monolayer.revisit the concept of energy levels in such hybrid systems.

Molecular Electronics at Metal/Semiconductor Junctions. Si Inversion by Sub-Nanometer Molecular Films

Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission, and, as such, is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.

Molecular control of a GaAs transistor

Abstract The interactions between adsorbed organic molecules and the electronic charge carriers in specially made GaAs structures are studied by time- and wavelength-dependent measurements of the photocurrent. The adsorption of the molecules modifies the photocurrent decay time by orders of magnitude. The effects are molecularly specific, as they depend on the electronic properties and absorption spectrum of the molecules. These observations are rationalized by assuming that new surface states are created upon adsorption of the molecules and that the character of these states is controlled by the relative electronegativity of the substrates and the adsorbed molecules. The relevance for surface passivation and for construction of semiconductor-based sensors is indicated.

Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level

We compare the charge transport characteristics of heavy-doped p(++)- and n(++)-Si-alkyl chain/Hg junctions. Based on negative differential resistance in an analogous semiconductor-inorganic insulator/metal junction we suggest that for both p(++)- and n(++)-type junctions, the energy difference between the Fermi level and lowest unoccupied molecular orbital (LUMO), i.e., electron tunneling, controls charge transport. This conclusion is supported by results from photoelectron spectroscopy (ultraviolet photoemission spectroscopy, inverse photoelectron spectroscopy, and x-ray photoemission spectroscopy) for the molecule-Si band alignment at equilibrium, which clearly indicate that the energy difference between the Fermi level and the LUMO is much smaller than that between the Fermi level and the highest occupied molecular orbital (HOMO). Furthermore, the experimentally determined Fermi level - LUMO energy difference, agrees with the non-resonant tunneling barrier height, deduced from the exponential length attenuation of the current.

Critical parameters in exfoliating graphite into graphene

Dispersing graphite into few-layers graphene sheets (GS) in water is very appealing as an environmental-friendly, low-cost, low-energy method of obtaining graphene. Very high GS concentrations in water (0.7 mg mL(-1)) were obtained by optimizing the nature of dispersant and the type of ultra-sonic generator. We find that a multi-step sonication procedure involving both tip and bath sources considerably enhances the yield of exfoliated GS. Raman and transmission electron microscopy indicate few-layers graphene patches with typical size of ∼0.65 μm in one dimension and ∼0.35 μm in the other. These were further employed in combination with water-dispersed CNTs to fabricate conductive transparent electrodes for a molecularly-controlled solar-cell with an open-circuit voltage of 0.53 V.

Rethinking Transition Voltage Spectroscopy within a Generic Taylor Expansion View

Transition voltage spectroscopy (TVS) has become an accepted quantification tool for molecular transport characteristics, due to its simplicity and reproducibility. Alternatively, the Taylor expansion view, TyEx, of transport by tunneling suggests that conductance-voltage curves have approximately a generic parabolic shape, regardless of whether the tunneling model is derived from an average medium view (e.g., WKB) or from a scattering view (e.g., Landauer). Comparing TVS and TyEx approaches reveals that TVS is closely related to a bias-scaling factor, V(0), which is directly derived from the third coefficient of TyEx, namely, the second derivative of the conductance with respect to bias at 0 V. This interpretation of TVS leads to simple expressions that can be compared easily across primarily different tunneling models. Because the basic curve shape is mostly generic, the quality of model fitting is not informative on the actual tunneling model. However internal correlation between the conductance near 0 V and V(0) (TVS) provides genuine indication on fundamental tunneling features. Furthermore, we show that the prevailing concept that V(0) is proportional to the barrier height holds only in the case of resonant tunneling, while for off-resonant or deep tunneling, V(0) is proportional to the ratio of barrier height to barrier width. Finally, considering TVS as a measure of conductance nonlinearity, rather than as an indicator for energy level spectroscopy, explains the very low TVS values observed with a semiconducting (instead of metal) electrode, where transport is highly nonlinear due to the relatively small, bias-dependent density of states of the semiconducting electrode.

Large-Area, Ensemble Molecular Electronics: Motivation and Challenges

We review charge transport across molecular monolayers, which is central to molecular electronics (MolEl), using large-area junctions (NmJ). We strive to provide a wide conceptual overview of three main subtopics. First, a broad introduction places NmJ in perspective to related fields of research and to single-molecule junctions (1mJ) in addition to a brief historical account. As charge transport presents an ultrasensitive probe for the electronic perfection of interfaces, in the second part ways to form both the monolayer and the contacts are described to construct reliable, defect-free interfaces. The last part is dedicated to understanding and analyses of current-voltage (I-V) traces across molecular junctions. Notwithstanding the original motivation of MolEl, I-V traces are often not very sensitive to molecular details and then provide a poor probe for chemical information. Instead, we focus on how to analyze the net electrical performance of molecular junctions, from a functional device perspective. Finally, we point to creation of a built-in electric field as a key to achieve functionality, including nonlinear current-voltage characteristics that originate in the molecules or their contacts to the electrodes. This review is complemented by a another review that covers metal-molecule-semiconductor junctions and their unique hybrid effects.

A two junction, four terminal photovoltaic device for enhanced light to electric power conversion using a low-cost dichroic mirror

A low-cost dichroic mirror can be used successfully for solar spectrum splitting to enhance solar to electrical energy conversion. The mirror is optimized for use with a polycrystalline silicon photovoltaic cell pc-Si. With the dichroic mirror simultaneous excitation of a medium-efficient 11.1% commercial pc-Si and a custommade high band gap GaInP cell 12.3%, yields 16.8% efficiency, with both cells operating at maximum power. Our results clearly show that what is missing for this simple low-cost enhancement of Si solar cell efficiency are low-cost high band gap cells.

CRYSTALLIZATION OF LAYERED METAL-DICHALCOGENIDES FILMS ON AMORPHOUS SUBSTRATES

Anisotropic materials with layered structure, like MoS2 and WSe2, play an important role in a number of technologies. Some of these applications (lubrication, photovoltaics) require polycrystalline films oriented with their c axis perpendicular to the substrate surface (type‐II texture), which is the thermodynamically favorable texture. However, films with the substrate ∥c (type‐I texture) are usually obtained. We report that an ultrathin ( 2, or InSe disentangle the growth mode of the film from the underlying amorphous substrate, and hence, WSe2 films with a perfect type‐II texture and crystallites at least a few mm2 large are obtained at temperatures as low as 700 °C (van der Waals rheotaxy–vdWR). The mechanism for this growth mode is proposed.