Azalia A. Krasnoperova

NANOMETER FOCUSING OF HARD X RAYS BY PHASE ZONE PLATES

Focusing of 8 keV x rays to a spot size of 150 and 90 nm full width at half maximum have been demonstrated at the first- and third-order foci, respectively, of a phase zone plate (PZP). The PZP has a numerical aperture of 1.5 mrad and focusing efficiency of 13% for 8 keV x rays. A flux density gain of 121 000 was obtained at the first-order focus. In this article, the fabrication of the PZP and its experimental characterization are presented and some special applications are discussed.

Development of zone plates with a blazed profile for hard x-ray applications

A linear and a circular zone plate with a blazed zone profile (ZPBP) have been fabricated and characterized using synchrotron x rays. The ZPBPs have significantly improved performances in terms of focusing efficiency and the background near the focus compared to those of a zone plate with a square profile, of which the transmission function can be characterized by a binary square wave. In many respects and practical cases, an x-ray ZPBP may be used in a way analogous to an optical lens in the visible light region. In this article, the experimental characterization of the ZPBPs is presented and some special applications are discussed.

Process window OPC for reduced process variability and enhanced yield

As the industry moves toward 45nm technology node and beyond, further reduction of lithographic process window is anticipated. The consequence of this is twofold: first, the manufactured chip will have pattern sizes that are different from the designed pattern sizes and those variations may become more dominated by systematic components as the process windows shrink; second, smaller process windows will lead to yield loss as, at small dimensions, lithographic process windows are often constrained by catastrophic fails such as resist collapse or trench scumming, rather than by gradual pattern size variation. With this notion, Optical Proximity Correction (OPC) for future technology generations must evolve from the current single process point OPC to algorithms that provide an OPC solution optimized for process variability and yield. In this paper, a Process Window OPC (PWOPC) concept is discussed, along with its place in the design-to-manufacturing flow. Use of additional models for process corners, integration of process fails and algorithm optimization for a production-worthy flow are described. Results are presented for 65nm metal levels.

DEVELOPMENT OF A HARD X-RAY IMAGING MICROSCOPE

A hard x‐ray imaging microscope based on a phase zone plate has been developed and tested. The zone plate, with a 5 cm focal length and a 0.2 μm smallest linewidth, was used to image 8 keV x rays from the samples. The imaging microscope can be used to obtain nearly diffraction‐limited resolution over the entire imaging field, and its resolution is almost independent of source size and source motions. We have tested such an imaging microscope, and a resolution of about 0.4 μm was obtained. The images were obtained with an exposure time of less than 1 min, for a magnification factor of 30 in the x rays. The x rays were then converted into visible light, and another 7 times magnification were obtained by using a lens system coupled to a charge coupled device camera. The results from the imaging microscope, and possible applications, will be discussed.

High-performance multilevel blazed x-ray microscopy Fresnel zone plates: Fabricated using x-ray lithography

Diffractive lenses are becoming the optical elements of choice for many applications. One type of diffractive lens, the binary zone plate, has already demonstrated high‐resolution performance experimentally. However, in order to increase the diffraction efficiency of these zone plates, a blazed grating profile must be used. This can best be approximated by a staircase grating profile, created by multilevel exposures. Using x‐ray lithograph, we fabricated for the first time circular, linear bi‐ and trilevel zone plates, with gold structures 0.75 μm thick (per level), on silicon nitride substrates. The zone plates were designed for use at a wavelength of 1.54 A, and had a theoretical efficiency of 68.5% for bilevel and 81.5% for trilevel zone plates. Due to the large depth of focus and high resolution inherent to x‐ray lithography, the finished zone plate exhibits very steep sidewall profiles, with linewidth resolution down to 0.25 μm. Such vertical sidewalls are essential for achieving high lens efficiency...

Benefits and trade-offs of global source optimization in optical lithography

Source optimization in optical lithography has been the subject of increased exploration in recent years [1-4], resulting in the development of multiple techniques including global optimization of process window [4]. The performance advantages of source optimization have been demonstrated through theory, simulation, and experiment. This paper will emphasize global optimization of sources over multiple patterns, e.g. co-optimization of critical SRAM cells and the critical pitches of random logic, and implement global source optimization into current resolution enhancement techniques (RETs). The effect on optimal source due to considering multiple patterns is investigated. We demonstrate that optimal source for limited patterns does work for a large clip of layout. Through theoretical analysis and simulations, we explain that only critical patterns and/or critical combinations of patterns determine the final optimal source; for example those patterns that contain constraints which are active in the solution. Furthermore, we illustrate, through theory and simulation, that pixelated sources have better performance than generic sources and that in general it is impossible for generic sources to construct a truly optimal solution. Sensitivity, tool matching, and lens heating issues for pixelated sources are also discussed in this paper. Finally, we use a RETs example with wafer data to demonstrate the benefits of global source optimization.

Scanning force microscopy measurements of latent image topography in chemically amplified resists

Noncontact scanning force microscopy topography measurements of exposed and undeveloped photoresists are reported. A negative chemically amplified photoresist, SAL605, was patterned by electron beam direct writing of 1 μm line linear gratings, and 5 mm pads. A relief image of exposed unbaked resist has been observed of the order of a few A, and then monitored as a function of time after exposure. This relief image undergoes a topography transformation with postexposure bake (PEB), yielding a ridge located at the exposed–unexposed region interface, extending several nanometers in vertical and about one micrometer laterally. The effect has been investigated as a function of PEB time and exposure dose. Correlations of the observed phenomena with optical film thickness monitoring techniques and previously reported data on the photoresist chemical changes during exposure and PEB are discussed. Two independent mechanisms contributing to the image formation are identified. The data show that the local chemistry ...

Fabrication of hard x-ray phase zone plate by x-ray lithography

Fresnel phase zone plates for hard x‐ray microfocusing have been fabricated. An original x‐ray mask written by e‐beam lithography was replicated into thick PMMA by x‐ray proximity printing. The pattern was transferred into gold and nickel by electroplating. A smallest linewidth of 0.25 μm with an aspect ratio of 14 in the metal pattern has been achieved. Thickness of fabricated zone plates was dictated by a π‐phase shift requirement for focusing of the x rays at 8 and 20 keV energies.

Modeling and simulations of a positive chemically amplified photoresist for x‐ray lithography

This article presents the results of the experimental and modeling study of a positive tone, chemically amplified photoresist, in application to x‐ray lithography. Spectrophotometric titration, Fourier transform infrared spectroscopy (FTIR), and development rate monitor data were acquired and used as inputs for the modeling of the processes and pattern simulations. The exposure model assumes monomolecular decomposition upon radiation and corresponds to Dill’s model for a nonbleaching photoactive compound. The post‐exposure bake (PEB) model is based on formal kinetic equations which include a term for photoacid loss (or side reactions) during the post‐exposure bake process in a generalized way. The effective kinetic order of the photoacid loss reaction is derived from the FTIR absorbance data obtained for different PEB times and exposure doses. For patterned exposures, a diffusion term for the local photoacid concentration is included. The photoacid and tert‐butoxycarbonyloxystyrene concentration profile c...

Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations

In recent years the potential of Source-Mask Optimization (SMO) as an enabling technology for 22nm-and-beyond lithography has been explored and documented in the literature.1-5 It has been shown that intensive optimization of the fundamental degrees of freedom in the optical system allows for the creation of non-intuitive solutions in both the mask and the source, which leads to improved lithographic performance. These efforts have driven the need for improved controllability in illumination5-7 and have pushed the required optimization performance of mask design.8, 9 This paper will present recent experimental evidence of the performance advantage gained by intensive optimization, and enabling technologies like pixelated illumination. Controllable pixelated illumination opens up new regimes in control of proximity effects,1, 6, 7 and we will show corresponding examples of improved through-pitch performance in 22nm Resolution Enhancement Technique (RET). Simulation results will back-up the experimental results and detail the ability of SMO to drive exposure-count reduction, as well as a reduction in process variation due to critical factors such as Line Edge Roughness (LER), Mask Error Enhancement Factor (MEEF), and the Electromagnetic Field (EMF) effect. The benefits of running intensive optimization with both source and mask variables jointly has been previously discussed.1-3 This paper will build on these results by demonstrating large-scale jointly-optimized source/mask solutions and their impact on design-rule enumerated designs.