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Dive into the research topics where B. Fernier is active.

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Featured researches published by B. Fernier.


optical fiber communication conference | 1999

1.55 /spl mu/m DFB lasers with integrated spot size converters operating at 2.5 Gbit/s with modulated power over 20 mW for 180 km transmission

B. Thedrez; J.M. Rainsant; V. Voiriot; L. Roux; A. Pinquier; B. Fernier

Low-divergence 1.55 /spl mu/m distributed feedback (DFB) lasers with spot-size converter were used to demonstrate <1.5 db penalty after 180 km transmission at a rate of 2.5 Gbit/s with peak power over 20 mW.


international conference on indium phosphide and related materials | 1999

1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process

V. Voiriot; B. Thedrez; J.L. Gentner; J.-M. Rainsant; V. Colson; C. Duchemin; F. Gaborit; S. Hubert; J.L. Lafragette; A. Pinquier; L. Roux; B. Fernier

We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.


international conference on indium phosphide and related materials | 1998

UV-250 patterning of sub-micron tapered active layers

Denis Tregoat; V. Colson; J. Coquard; L. Le Gouezigou; A. Lestra; A. Pinquier; F. Poingt; B. Fernier

This paper reports the first results on Fabry-Perot 1.3 /spl mu/m lasers with sub-micron tapered active layers defined using a UV-250 patterning technology in combination with conventional RIE processing of InP. Its implementation to the full 2 inch wafer process flow is of interest in low cost module fabrication. Short lasers (500 /spl mu/m) with low coupling loss (3.4 dB with end cleaved fiber) and high quantum efficiency (0.26 W/A at 85/spl deg/C) are demonstrated.


optical fiber communication conference | 2001

1.3 /spl mu/m tapered DFB lasers for isolator-free 2.5 Gbits all-optical networks

B. Thedrez; O. Gauthier-Lafaye; F. Grillot; V. Voiriot; J.-L. Lafragette; J.-L. Gentner; B. Fernier; J. Py; L. Sylvestre

All-optical networks require low cost and high efficiency laser sources. We demonstrate floorless 2.5 Gbit/s transmission under 20 dB return loss with 1.3 /spl mu/m tapered lasers designed for optics-free, isolator-free modules with no temperature control.


optical fiber communication conference | 2000

2.5 Gbit/s error-floor free transmission with high extinction ratio using directly modulated 1.55 /spl mu/m tapered lasers

B. Thedrez; J.M. Rainsant; N. Aberkane; V. Voiriot; S. Hubert; J.-L. Lafragette; L. Roux; M.F. Martineau; F. Gaborit; B. Fernier; D. Domingues

The emergence of a BER floor using a directly modulated laser is studied versus the modulation extinction ratio. A selection on efficiency leads to a 100% DFB yield for floor-free transmission at a high extinction ratio of 14 dB.


international conference on indium phosphide and related materials | 2000

High-efficiency 1.3 /spl mu/m Fabry-Perot laser diode based on hydrogenated passive spot-size converter

Denis Tregoat; F. Barthe; P. Berthier; M. Bordes; V. Colson; J.L. Gentner; S. Hubert; D. Leclerc; L. Le Gouezigou; A. Lestra; E.V.K. Rao; N. Tscherptner; B. Fernier

We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size Converter (SSC). Hydrogenation of the buried passive section has been successfully implemented on a 2-inch wafer technology. Hydrogenated SSC-BRS LDs exhibit excellent high temperature CW performances. Improvement of external efficiency (0.24 and 0.16 W/A respectively measured at 85/spl deg/C on hydrogenated and as-grown 500 /spl mu/m-long SSC devices) confirms that hydrogenation significantly reduces the free carrier optical absorption losses. Moreover, its long-term stability is demonstrated through 2000 hrs Automatic Power Control test.


european conference on optical communication | 1998

200 km 2.5 Gbit/s transmission with low threshold 1.55 /spl mu/m partly gain-coupled DFB lasers

N. Aberkane; B. Thedrez; J.M. Rainsant; V. Voiriot; J.L. Gentner; A. Pinquier; L. Le Gouezigou; B. Fernier

We present partly gain-coupled DFB lasers with a periodically etched active layer. Low threshold currents are reported 200 km NDSF transmission experiment at 2.5 Gb/s show very low penalty of 0.3 dB. We have fabricated and measured partly gain-coupled DFB lasers with periodically etched quantum-wells. The technology used was checked to be homogeneous and reproducible. Very low threshold currents are reported with a high singlemode yield. 200 km (NDSF) nondispersion shifted fibre transmission at 2.5 Gb/s was performed with a very low penalty.


Electronics Letters | 1990

1.55 μm high-gain polarisation-insensitive semiconductor travelling wave amplifier with low driving current

B. Mersali; G. Gelly; A. Accard; J.-L. Lafragette; P. Doussiere; M. Lambert; B. Fernier


Electronics Letters | 1992

Very narrow-linewidth (70 kHz) 1.55 mu m strained MQW DFB lasers

H. Bissessur; C. Starck; J.-Y. Emery; F. Pommereau; C. Duchemin; Jean-Guy Provost; J.L. Beylat; B. Fernier


Electronics Letters | 1998

Very low threshold current density GSMBE 1.55 /spl mu/m gain-coupled DFB lasers

N. Aberkane; B. Thedrez; J.L. Gentner; A. Pinquier; V. Voiriot; L. Le Gouezigou; B. Fernier

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B. Mikkelsen

University of Copenhagen

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K.E. Stubkjaer

Technical University of Denmark

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