Denis Tregoat

UV-250 patterning of sub-micron tapered active layers

This paper reports the first results on Fabry-Perot 1.3 /spl mu/m lasers with sub-micron tapered active layers defined using a UV-250 patterning technology in combination with conventional RIE processing of InP. Its implementation to the full 2 inch wafer process flow is of interest in low cost module fabrication. Short lasers (500 /spl mu/m) with low coupling loss (3.4 dB with end cleaved fiber) and high quantum efficiency (0.26 W/A at 85/spl deg/C) are demonstrated.

High-efficiency 1.3 /spl mu/m Fabry-Perot laser diode based on hydrogenated passive spot-size converter

We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size Converter (SSC). Hydrogenation of the buried passive section has been successfully implemented on a 2-inch wafer technology. Hydrogenated SSC-BRS LDs exhibit excellent high temperature CW performances. Improvement of external efficiency (0.24 and 0.16 W/A respectively measured at 85/spl deg/C on hydrogenated and as-grown 500 /spl mu/m-long SSC devices) confirms that hydrogenation significantly reduces the free carrier optical absorption losses. Moreover, its long-term stability is demonstrated through 2000 hrs Automatic Power Control test.