B. G. Konoplev

Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy

We report on the results of experimental study of an array of vertically aligned carbon nanotubes (VA CNTs) by scanning tunnel microscopy (STM). It is shown that upon the application of an external electric field to the STM probe/VA CNT system, individual VA CNTs are combined into bundles whose diameter depends on the radius of the tip of the STM probe. The memristor effect in VA CNTs is detected. For the VA CNT array under investigation, the resistivity ratio in the low- and high-resistance states at a voltage of 180 mV is 28. The results can be used in the development of structures and technological processes for designing nanoelectronics devices based on VA CNT arrays, including elements of ultrahigh-access memory cells for vacuum microelectronics devices.

Study of the resistive switching of vertically aligned carbon nanotubes by scanning tunneling microscopy

The effect of an external electric field on the electromechanical properties and regularities of the resistive switching of a vertically aligned carbon nanotube (VA CNT) has been studied experimentally using scanning tunneling microscopy. It has been shown that the VA CNT resistivity ratio in the high- and low-resistance states is higher than 25 as the distance between the scanning tunneling microscope (STM) probe and the VA CNT is 1 nm at a voltage of 8 V and depends on the voltage applied between the probe and the VA CNT. The proposed mechanism of resistive switching of VA CNTs is based on an instantaneous deformation and induction of a VA CNT internal electric field as a result of the sharp change in the time derivative of the external electric field strength. The obtained results can be used for the design and fabrication of resistive energy-efficient memory elements with a high density of storage cells on the basis of vertically aligned carbon nanotubes.

Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods

The results of investigation of a memristor-matrix model on the basis of titanium-oxide nanoscale structures (ONSs) fabricated by methods of focused ion beams and atomic-force microscopy (AFM) are presented. The effect of the intensity of interaction between the AFM probe and the sample surface on the memristor effect in the titanium ONS is shown. The memristor effect in the titanium ONS is investigated by an AFM in the mode of spreading-resistance map. The possibility of the recording and erasure of information in the submicron cells is shown on the basis of using the memristor effect in the titanium ONS, which is most promising for developing the technological processes of the formation of resistive operation memory cells

Probe modification for scanning-probe microscopy by the focused ion beam method

The paper presents the results of experimental investigations into probe modification for atomic-force microscopy (AFM) and scanning tunneling microscopy (STM) by etching the point of AFM cantilevers and tungsten STM probes by applying the method of focused ion beams (FIBs). It is shown that the use of etching by the IB method allows one to obtain the probes with rounding that is less than 10 nm and with an aspect ratio of 1: 50. The application of these probes increases the resolution and the reliability of measuring by the AFM and STM methods. The obtained results can be used for developing the technological processes of production and modification of sensor probes for AFM and STM, as well as the methods for diagnostics of the structures of microelectronics, nanoelectronics and the microsystem and nanosystem technologies.

Development of a technique for determining Young’s modulus of vertically aligned carbon nanotubes using the nanoindentation method

A technique for determining Young’s modulus of vertically aligned carbon nanotubes using the refined micromechanical model of the nanoindentation of a forest of vertically aligned carbon nanotubes is developed. The results of experimental studies of Young’s modulus determination for vertically aligned carbon nanotubes with different geometrical parameters are given. It is shown that, for a forest of carbon nanotubes with an effective diameter of around 100 nm and an effective length of approximately 2 μm, as well as for a forest with an effective diameter of carbon nanotubes of roughly 52 nm and their effective length of nearly 500 nm, the values of Young’s modulus are 1.68 ± 0.08 and 1.01 ± 0.05 TPa, respectively. Our results can be used for developing the technological processes of the formation of structures for nano- and microelectronics and nano- and microsystem technology on the basis of vertically aligned carbon nanotubes.

Formation of nanosize structures on a silicon substrate by method of focused ion beams

The results of experimental studies of modes in which nanosize structures are formed on a silicon substrate by method of focused ion beams are presented. Dependences of the diameter and depth of the nanosize structures on the ion beam current and time of exposure to the ion beam at a point are obtained. It is demonstrated that the main factor determining the rate of ion-beam milling is the ion beam current. The results of the study can be used in the development of technological processes for the fabrication of components for nanoelectronics and nanosystems engineering.

Photoactivation of the processes of formation of nanostructures by local anodic oxidation of a titanium film

Experimental results on the conditions of activation of probe nanolithography of a thin titanium film by means of local anodic oxidation are reported. It is established that ultraviolet stimulation reduces the geometric dimensions of nanometric oxide structures. The stimulation is accompanied by an increase in the amplitude and duration of the threshold voltage pulse, correspondingly, from 6 to 7 V and from 50 to 100 ms at the relative humidity 50%. The experimental data on the effect of the cantilever coating material and substrate temperature on the geometric dimensions of nanometric oxide structures are reported.

Development of New Metamaterials for Advanced Element Base of Micro- and Nanoelectronics, and Microsystem Devices

The results of experimental researches of the geometrical parameters of vertically aligned carbon nanotubes (VACNTs) are present by atomic force microscopy. The analysis of the applicability of the different AFM modes to determine the geometrical parameters of VACNTs array was carried out and based on this analysis the rapid-technique for determination of the length of the nanotubes in VACNTs array was developed. Unified two-layer polysilicon surface micromachining process for manufacture of biaxial micromechanical gyroscope , triaxial micromechanical accelerometer and biaxial nanomechanical accelerometer was proposed. Polysilicon inertial masses were fabricated by optical lithography, dry etching under different masks and wet etching of sacrificial layer. We developed AFM-technique for determination of electrical parameters GaAs nanowires (NWs) , which does not require additional operations of NW fixation and allows one to estimate the resistivity and conductivity type of NW material. The obtained results can use to develop of the nanodiagnostic methods and the processes of formation of micro- and nanoelectronic elements based.

Components of integrated microwave circuits based on complementary coupled quantum regions

A method for the design of high-speed components of integrated circuits based on III–V semiconductors using complementary logic principles, which provides an increase in performance and degree of integration of microwave integrated circuits, is considered.

Modeling of the Substrate Topography upon Nanosized Profiling by Focused Ion Beams

This paper presents the results of a mathematical model developed for calculating two-dimensional topography of the substrate surface when etching by a focused ion beam (FIB). A simulation of the two-dimensional relief of the substrate when irradiated by the FIB was carried out. An algorithm and software were developed making it possible to forecast the parameters of the surface relief depending on the characteristics of the ion beam and scanning system. The algorithm takes into account the redeposition of the sputtered material. The adequacy of the model is confirmed by a comparison with the results of experimental investigations.