O. A. Ageev

Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy

We report on the results of experimental study of an array of vertically aligned carbon nanotubes (VA CNTs) by scanning tunnel microscopy (STM). It is shown that upon the application of an external electric field to the STM probe/VA CNT system, individual VA CNTs are combined into bundles whose diameter depends on the radius of the tip of the STM probe. The memristor effect in VA CNTs is detected. For the VA CNT array under investigation, the resistivity ratio in the low- and high-resistance states at a voltage of 180 mV is 28. The results can be used in the development of structures and technological processes for designing nanoelectronics devices based on VA CNT arrays, including elements of ultrahigh-access memory cells for vacuum microelectronics devices.

Au-TiBx-n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts

Mechanism of charge transport in a diode of a silicon carbide’s Schottky barrier formed by a quasi-amorphous interstitial phase TiBx on the surface of n-6H-SiC (0001) single crystals with an uncompensated donor (nitrogen) concentration of ∼1018 cm−3 and dislocation density of ∼(106–108) cm−2 has been studied. It is demonstrated that, at temperatures T ≲ 400 K, the charge transport is governed by the tunneling current along dislocations intersecting the space charge region. At T > 400 K, the mechanism of charge transport changes to a thermionic mechanism with a barrier height of ∼0.64 eV and ideality factor close to 1.3.

Study of the resistive switching of vertically aligned carbon nanotubes by scanning tunneling microscopy

The effect of an external electric field on the electromechanical properties and regularities of the resistive switching of a vertically aligned carbon nanotube (VA CNT) has been studied experimentally using scanning tunneling microscopy. It has been shown that the VA CNT resistivity ratio in the high- and low-resistance states is higher than 25 as the distance between the scanning tunneling microscope (STM) probe and the VA CNT is 1 nm at a voltage of 8 V and depends on the voltage applied between the probe and the VA CNT. The proposed mechanism of resistive switching of VA CNTs is based on an instantaneous deformation and induction of a VA CNT internal electric field as a result of the sharp change in the time derivative of the external electric field strength. The obtained results can be used for the design and fabrication of resistive energy-efficient memory elements with a high density of storage cells on the basis of vertically aligned carbon nanotubes.

Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods

The results of investigation of a memristor-matrix model on the basis of titanium-oxide nanoscale structures (ONSs) fabricated by methods of focused ion beams and atomic-force microscopy (AFM) are presented. The effect of the intensity of interaction between the AFM probe and the sample surface on the memristor effect in the titanium ONS is shown. The memristor effect in the titanium ONS is investigated by an AFM in the mode of spreading-resistance map. The possibility of the recording and erasure of information in the submicron cells is shown on the basis of using the memristor effect in the titanium ONS, which is most promising for developing the technological processes of the formation of resistive operation memory cells

Probe modification for scanning-probe microscopy by the focused ion beam method

The paper presents the results of experimental investigations into probe modification for atomic-force microscopy (AFM) and scanning tunneling microscopy (STM) by etching the point of AFM cantilevers and tungsten STM probes by applying the method of focused ion beams (FIBs). It is shown that the use of etching by the IB method allows one to obtain the probes with rounding that is less than 10 nm and with an aspect ratio of 1: 50. The application of these probes increases the resolution and the reliability of measuring by the AFM and STM methods. The obtained results can be used for developing the technological processes of production and modification of sensor probes for AFM and STM, as well as the methods for diagnostics of the structures of microelectronics, nanoelectronics and the microsystem and nanosystem technologies.

Development of a technique for determining Young’s modulus of vertically aligned carbon nanotubes using the nanoindentation method

A technique for determining Young’s modulus of vertically aligned carbon nanotubes using the refined micromechanical model of the nanoindentation of a forest of vertically aligned carbon nanotubes is developed. The results of experimental studies of Young’s modulus determination for vertically aligned carbon nanotubes with different geometrical parameters are given. It is shown that, for a forest of carbon nanotubes with an effective diameter of around 100 nm and an effective length of approximately 2 μm, as well as for a forest with an effective diameter of carbon nanotubes of roughly 52 nm and their effective length of nearly 500 nm, the values of Young’s modulus are 1.68 ± 0.08 and 1.01 ± 0.05 TPa, respectively. Our results can be used for developing the technological processes of the formation of structures for nano- and microelectronics and nano- and microsystem technology on the basis of vertically aligned carbon nanotubes.

Formation of nanosize structures on a silicon substrate by method of focused ion beams

The results of experimental studies of modes in which nanosize structures are formed on a silicon substrate by method of focused ion beams are presented. Dependences of the diameter and depth of the nanosize structures on the ion beam current and time of exposure to the ion beam at a point are obtained. It is demonstrated that the main factor determining the rate of ion-beam milling is the ion beam current. The results of the study can be used in the development of technological processes for the fabrication of components for nanoelectronics and nanosystems engineering.

Morphology and local electrical properties of PTB7:PC71BM blends

The power conversion efficiency of single layer organic solar cells can approach 10% with blends such as the polymer PTB7 and the fullerene derivative PC71BM. Here the detailed structure of PTB7:PC71BM blends deposited with and without addition of diiodooctane is studied by transmission electron microscopy and scanning probe microscopy. The details of bulk structure, such as the thickness of the layer covering fullerene domains and the grain structure of the film are examined. We find that fullerene-rich domains can be near the surface of the film or buried deeper, near the substrate. The local electrical properties of these blends are studied by conductive atomic force microscopy for different configurations of electrodes. Different power conversion efficiencies of blends with and without diiodooctane are explained in terms of local photoconductive properties.

Electrical and optical properties of zinc-oxide films deposited by the ion-beam sputtering of an oxide target

The influence of the parameters of the deposition process on the stoichiometric composition and electrical and optical properties of ZnO films deposited by the ion-beam sputtering of a ZnO target is studied. It is established that, upon sputtering of a ZnO target with stoichiometric composition, there is a deficit of oxygen in the films deposited. Even for the case of target sputtering in a pure O2 atmosphere, the stoichiometry index of the films is no higher than 0.98. A decrease in the oxygen content in the films is accompanied by a sharp decrease in the resistivity to 35–40 Ω m, narrowing of the optical band gap, and a shift of the optical transmittance edge from 389 to 404 nm. All of the variations in the optical and electrical properties of the ZnO films can be attributed to variations in the concentration and mobility of free charge carriers in the films.

Photoactivation of the processes of formation of nanostructures by local anodic oxidation of a titanium film

Experimental results on the conditions of activation of probe nanolithography of a thin titanium film by means of local anodic oxidation are reported. It is established that ultraviolet stimulation reduces the geometric dimensions of nanometric oxide structures. The stimulation is accompanied by an increase in the amplitude and duration of the threshold voltage pulse, correspondingly, from 6 to 7 V and from 50 to 100 ms at the relative humidity 50%. The experimental data on the effect of the cantilever coating material and substrate temperature on the geometric dimensions of nanometric oxide structures are reported.