B. Rodmacq

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection.

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.

Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer

Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin-orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect. Owing to the combination of spin-orbit and exchange interactions, we show that an electric current flowing in the plane of a Co layer with asymmetric Pt and AlO(x) interfaces produces an effective transverse magnetic field of 1 T per 10(8) A cm(-2). Besides its fundamental significance, the high efficiency of this process makes it a realistic candidate for room-temperature spintronic applications.

Fast current-induced domain-wall motion controlled by the Rashba effect

The propagation of magnetic domain walls induced by spin-polarized currents has launched new concepts for memory and logic devices. A wave of studies focusing on permalloy (NiFe) nanowires has found evidence for high domain-wall velocities (100 m s(-1); refs,), but has also exposed the drawbacks of this phenomenon for applications. Often the domain-wall displacements are not reproducible, their depinning from a thermally stable position is difficult and the domain-wall structural instability (Walker breakdown) limits the maximum velocity. Here, we show that the combined action of spin-transfer and spin-orbit torques offers a comprehensive solution to these problems. In an ultrathin Co nanowire, integrated in a trilayer with structural inversion asymmetry (SIA), the high spin-torque efficiency facilitates the depinning and leads to high mobility, while the SIA-mediated Rashba field controlling the domain-wall chirality stabilizes the Bloch domain-wall structure. Thus, the high-mobility regime is extended to higher current densities, allowing domain-wall velocities up to 400 m s(-1).

Creep and flow regimes of magnetic domain-wall motion in ultrathin Pt/Co/Pt films with perpendicular anisotropy.

We report on magnetic domain-wall velocity measurements in ultrathin Pt/Co(0.5-0.8 nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The complete velocity-field characteristics are obtained, enabling an examination of the transition between thermally activated creep and viscous flow: motion regimes predicted from general theories for driven elastic interfaces in weakly disordered media. The dissipation limited flow regime is found to be consistent with precessional domain-wall motion, analysis of which yields values for the damping parameter, alpha.

High domain wall velocities induced by current in ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy

Current-induced domain wall (DW) displacements in an array of ultrathin Pt/Co/AlOx wires with perpendicular magnetic anisotropy have been directly observed by wide field Kerr microscopy. DWs in all wires in the array were driven simultaneously and their displacement on the micrometer scale was controlled by the current pulse amplitude and duration. At the lower current densities where DW displacements were observed (j≤1.5×1012 A/m2), the DW motion obeys a creep law. At higher current density (j=1.8×1012 A/m2), zero-field average DW velocities up to 130±10 m/s were recorded.

Analysis of oxygen induced anisotropy crossover in Pt/Co/MOx trilayers

Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in-plane to out-of-plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via X-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface.Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in-plane to out-of-plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via X-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface.

Crossover from in-plane to perpendicular anisotropy in Pt/CoFe/AlOx sandwiches as a function of Al oxidation: A very accurate control of the oxidation of tunnel barriers

By measuring the extraordinary Hall effect on a series of naturally oxidized Pt3 nm/Co90Fe10 0.6 nm/Al tAl samples with 0<tAl<1.2 nm, a first crossover from in-plane to perpendicular magnetic anisotropy is observed when tAl is varied from 0 to 0.2 nm. The CoFe magnetization remains out of plane for 0.2<tAl<0.5 nm. When the Al thickness is further increased, a second crossover back to in plane takes place. In a series of samples in which the Al thickness is kept constant, the same behavior is observed as the time of exposure to an oxygen plasma is varied. The results clearly indicate that the degree of oxidation of Al at the CoFe/AlOx interface has a dramatic effect on the magnetic anisotropy of the transition-metal layer. These sharp crossovers of anisotropy provide a very accurate and convenient way to monitor the oxidation of the tunnel barrier in magnetic tunnel junctions. This technique is also applied to characterize the oxidation kinetics of various ultrathin metallic layers as well as the aging eff...

Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers

In (Pt/Co)n/FeMn multilayers, the magnitude of exchange bias, HE, can be considerably enhanced by placing an ultrathin nonmagnetic Pt spacer between the multilayer (ML) and the antiferromagnetic (AFM) layer. The bias is maximum for a spacer layer thickness, t, of a few angstroms and it decreases progressively as t is further increased. This bias enhancement is accompanied by an increase of coercivity, HC. This behavior is due to the role of the Pt spacer in enhancing the perpendicular effective anisotropy of the last Co layer in the ML, which has the effect of increasing the net ferromagnetic (FM)/AFM spin projection, thus leading to the HE and HC enhancements. The decrease of HE and HC for thicker spacer layers is due to the limited range of the FM–AFM proximity effect.

Exchange-biased spin valves with perpendicular magnetic anisotropy based on (Co/Pt) multilayers

We have prepared spin valves exhibiting perpendicular magnetic anisotropy [perpendicular spin valves (PSVs)] by sputtering. These PSVs associate a “free” (Co/Pt) multilayer with a “pinned” (Co/Pt)/FeMn multilayer separated by various spacer materials (Pt, Cu, Al2O3). We carried out a comprehensive study of the magnetic and magnetotransport properties of the biased multilayers and of the complete spin valves. When the number of repeats in the (Co/Pt) exchange-biased multilayer is larger than 3, the samples present 100% remnant magnetization in the perpendicular configuration. The major hysteresis cycles exhibit two well-separated loops associated with the free and the exchange-biased (Pt/Co) multilayers. When optimized, the exchange-bias field can be larger than the coercivity of the pinned layer. Metallic PSVs with Cu spacers exhibit giant magnetoresistance but the amplitude is only of the order of 1% due to significant current shunting. In contrast, perpendicularly magnetized tunnel junctions are very pr...

Pt/Co/oxide and oxide/Co/Pt electrodes for perpendicular magnetic tunnel junctions

This letter presents a study of perpendicular magnetic anisotropy in oxide/Co/Pt structures, which could constitute the upper magnetic electrode of magnetic tunnel junctions. The growth of cobalt layers on SiO2 substrates shows that all 0.6 nm thick Co films are superparamagnetic, whereas perpendicular magnetic anisotropy is obtained for 1.5 nm films after annealing. Co layers grown on various Al and Mg oxides prepared by sputtering also exhibit perpendicular magnetic anisotropy after annealing. Combined with inverse Pt/Co(CoFeB)/oxide stackings, these structures allow preparing tunnel junctions with thicker magnetic electrodes and much better thermal stability than those based on standard Pt/Co multilayers.