B. Y. Majlis

Bluff body fluid interactions modelling for micro energy harvesting application

In this paper, we have presented a MEMS-based piezoelectric fluid-flow based micro energy harvester. The design and modelling of the energy harvester structure was based on a piezoelectric cantilever affixed to a bluff-body. In a cross fluid flow, pressure in the flow channel, in the wake of the bluff body, fluctuates with the same frequency as the pressure variation caused by the Karman Vortex Street. This fluctuation of pressure in the flow channel causes the piezoelectric cantilever, trailing the bluff-body, to vibrate in a direction normal to the fluid flow direction. COMSOL finite element analysis software are used for the evaluation of various mechanical analysis of the micro energy harvester structure like, physical the Stress and Strain state in the cantilever structures, Eigen frequency Analysis, Transient analysis to demonstrate the feasibility of the design. Detailed steps of modelling and simulation results of the uniform cantilever were explained. The results confirm the probability of the fluid flow based MEMS energy harvester.

Synthesis and characterization of sn doped ZnO nanowires

This paper reports on synthesis and characterizations of Sn doped ZnO nanowires. Sn doped ZnO nanowires was successfully been grown using carbothermal reduction method. Morphological and structures were characterized using FESEM, revealed that nanowires grown on random direction with diameter around 30 – 60 nm. EDX analysis was used to confirm composition element, Sn element was found in the nanowires in less than 1% of total composition. XRD was applied to examine structure quality of Sn doped ZnO nanowires, XRD spectra shown the structure have high crystallinity and it is wurtzite structure. No contrast different were found between pure and Sn doped ZnO nanowires. I-V measurement shown that using Sn as dopant may decrease the resistance of ZnO nanowires.

Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study

In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V th), transconductance (g m) and drain conductance (g D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (IOFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (ION) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.