B. Z. Olshanetsky

The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces

The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces caused by Ni segregation to the surface from the bulk due to the decrease of its solubility in silicon when lowering the temperature were studied by SEM, LEED and AES. There are two possible states of Ni on silicon surfaces depending on the cooling rate. These are manifested in the structure of the silicon surfaces, the sizes of epitaxial islands and their density on the surface.

Effect of adsorbed Sn on Ge diffusivity on Si(111) surface

The effect of adsorbed Sn as a surfactant on Ge diffusion on a Si(111) surface has been studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The experimental dependence of Ge diffusion coefficients on the Si(111) surface versus temperature in the presence of adsorbed Sn atoms has been measured in the range from 300 to 650°C. It has been shown that at a Sn coverage of about 1 monolayer the mobility of Ge atoms increases by several orders of magnitude.

Ge diffusion on Si surfaces

Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.

Mechanism of Cu transport along clean Si surfaces

Cu diffusion along clean Si(111), (110) and (100) surfaces are investigated by Auger electron spectroscopy and low energy electron diffraction. The effective diffusion coefficients of copper are measured in the temperature range from 500 to 650°C. It is shown that the Cu transport along silicon surface occurs by the diffusion of Cu atoms through Si bulk and the segregation of Cu atoms to the surface during the diffusion process. It is found that the segregation coefficients of Cu to silicon surface during the diffusion process depend on surface orientation.

Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the formation of a Ge wetting layer on the Si(111) surface at germanium deposition rates of approximately 10−3 BL/min and epitaxial temperatures of 350–500°C occurs through the island or multilayer growth mechanism. This makes it possible to prepare arrays of Ge islands with a height of 3 BL and a density of 109–1012 cm−2. The growth of Ge nanowires with a constant height and a width dependent on the Ge coverage is observed on vicinal Si(111) surfaces. It is found that the surface diffusion coefficients of Ge adatoms on the Ge(5×5) surface are severalfold larger than those on the Si(7×7) surface. The Raman spectra of optical phonons on the Si(111) surface with Ge nanoislands 3 BL in height contain a number of lines associated with the quantization of the phonon spectrum along the [111] growth direction.

Scanning tunneling microscopy study of the growth and self-organization of Ge nanostructures on vicinal Si(111) surfaces

AbstractThe initial stages of Ge growth on Si(111) vicinal surfaces tilted in the [

Mechanism of copper diffusion over the Si(110) surface

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Influence of the Si(111)-7×7 surface reconstruction on the diffusion of strontium atoms

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