S.A. Teys

Co interaction with clean silicon surfaces

The interaction of cobalt with clean silicon surfaces has been studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). A number of previously unknown surface structures was observed on Si(111), (100) and (110) surfaces at Co submonolayer coverages. Correlation between the surface structures and Co surface concentration has been investigated in a wide range of sample temperatures in the solid phase epitaxy (SPE) and molecular beam epitaxy (MBE) modes. Co diffusion coefficients on Si surfaces have been evaluated. It follows from our data that they do not exceed the coefficients of Co diffusion in Si bulk.

The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces

The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces caused by Ni segregation to the surface from the bulk due to the decrease of its solubility in silicon when lowering the temperature were studied by SEM, LEED and AES. There are two possible states of Ni on silicon surfaces depending on the cooling rate. These are manifested in the structure of the silicon surfaces, the sizes of epitaxial islands and their density on the surface.

Scanning tunneling microscopy study of the growth and self-organization of Ge nanostructures on vicinal Si(111) surfaces

AbstractThe initial stages of Ge growth on Si(111) vicinal surfaces tilted in the [

Formation of strontium atomic chains on the singular and stepped Si(111) surfaces

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STM Studies of Self‐Organization of Ge Nanoislands and Nanostrips before Formation Wetting Layer on Si(111) Surfaces

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Simulation of initial stages of Ge nano-island nucleation on Si (111) surface

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