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Dive into the research topics where Bart-Hendrik Huisman is active.

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Featured researches published by Bart-Hendrik Huisman.


Applied Physics Letters | 2002

Switch-on voltage in disordered organic field-effect transistors

Eduard Johannes Meijer; C. Tanase; P.W.M. Blom; E. van Veenendaal; Bart-Hendrik Huisman; Dago M. de Leeuw; T. M. Klapwijk

The switch-on voltage for disordered organic field-effect transistors is defined as the flatband voltage, and is used as a characterization parameter. The transfer characteristics of the solution processed organic semiconductors pentacene, poly(2,5-thienylene vinylene) and poly(3-hexyl thiophene) are modeled as a function of temperature and gate voltage with a hopping model in an exponential density of states. The data can be described with reasonable values for the switch-on voltage, which is independent of temperature. This result also demonstrates that the large threshold voltage shifts as a function of temperature reported in the literature constitute a fit parameter without a clear physical basis.


Applied Physics Letters | 2003

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Eduard Johannes Meijer; Gerwin H. Gelinck; E. van Veenendaal; Bart-Hendrik Huisman; Dago M. de Leeuw; T. M. Klapwijk

The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the MΩ range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility.


Synthetic Metals | 2003

Photoconductivity enhancement of poly(3-hexylthiophene) by increasing inter- and intra-chain order

Gerald Dicker; Tom J. Savenije; Bart-Hendrik Huisman; Dago M. de Leeuw; Matthijs P. de Haas; John M. Warman

The transient conductivity of an organic thin film induced by the absorption of a nanosecond laser pulse can be probed by microwaves without the necessity of attaching electrodes to the sample. Poly(3-hexylthiophene), P3HT, samples of varying degrees of regioregularity and molecular weight were investigated. Films were produced by spin-coating or drop-casting in air or in a solvent-saturated atmosphere. We observed higher photoconductivity signals in films of higher regioregularity. Drop-casting as opposed to spin-coating yielded a further increase in the photoconductivity and also increased the lifetime of the mobile charge carriers. We conclude that the enhancement of the photoconductivity is due to a higher charge carrier mobility in films with increased intra- and inter-chain order in accordance with published results obtained from field-effect transistor studies.


international solid-state circuits conference | 2003

Plastic transistors in active-matrix displays

Edzer Huitema; G. Gelinck; B. van der Putten; Eugenio Cantatore; E. van Veenendaal; L. Schrijnemakers; Bart-Hendrik Huisman; Dago M. de Leeuw

An active-matrix display driven by a pixel circuit with polymer-based thin film transistors is demonstrated. The circuit contains 4096 solution-processed plastic transistors, which is among the largest organic circuits reported to date. The relation between the transistor parameters such as mobility and leakage current to the display performance is analyzed.


international electron devices meeting | 2002

Polymeric integrated circuits: fabrication and first characterisation

Dago M. de Leeuw; Gerwin H. Gelinck; Tom C. T. Geuns; E. van Veenendaal; Eugenio Cantatore; Bart-Hendrik Huisman

A technology to fabricate polymeric integrated circuits on 150-mm foils is presented. The technology is demonstrated with functional code generators. The integration level is about 700 transistors. The yield of the circuits has been measured as function of the complexity and has been correlated with intrinsic noise margin of the logic gates.


Synthetic Metals | 2001

Flash-photolysis time-resolved microwave conductivity of a poly(3-hexylthiophene) thin film

Gerald Dicker; B. Wegewijs; Jorge Piris; Tom J. Savenije; Bart-Hendrik Huisman; Dago M. de Leeuw; M.P. de Haas; John M. Warman

The transient conductivity of a spincoated poly(3-hexylthiophene) film upon laser excitation is probed using an electrodeless microwave conductivity technique which circumvents the drawbacks of electrode contacts, space charge and polarization in conventional DC methods. The dependence of the kinetics and the peak values of the conductivity transients is investigated as a function of excitation wavelength and intensity. From these results, insight into the mechanism of charge carrier generation, mobility and decay can be obtained.


Nature Materials | 2004

Flexible active-matrix displays and shift registers based on solution-processed organic transistors

Gerwin H. Gelinck; H. Edzer A. Huitema; Erik van Veenendaal; Eugenio Cantatore; Laurens Schrijnemakers; Jan Van Der Putten; Tom C. T. Geuns; Monique J. Beenhakkers; Jacobus Bernardus Giesbers; Bart-Hendrik Huisman; Eduard Johannes Meijer; Estrella Mena Benito; Fred Touwslager; Albert W. Marsman; Bas Jan Emile Van Rens; Dago M. de Leeuw


Nature Materials | 2003

Solution-processed ambipolar organic field-effect transistors and inverters

E.J. Meijer; Dago M. de Leeuw; Sepas Setayesh; E. van Veenendaal; Bart-Hendrik Huisman; P. W. M. Blom; Jan C. Hummelen; U. Scherf; T.M. Klapwijk


Organic Electronics | 2004

Oxygen-induced quenching of photoexcited states in polythiophene films

L. Lüer; H.-J. Egelhaaf; D. Oelkrug; Giulio Cerullo; Guglielmo Lanzani; Bart-Hendrik Huisman; Dago M. de Leeuw


Synthetic Metals | 2003

Photoimpedance spectroscopy of poly(3-hexyl thiophene) metal–insulator–semiconductor diodes

Eduard Johannes Meijer; A.V.G. Mangnus; Bart-Hendrik Huisman; G.W. ‘t Hooft; Dago M. de Leeuw; T. M. Klapwijk

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T. M. Klapwijk

Delft University of Technology

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Gerwin H. Gelinck

Eindhoven University of Technology

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