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Dive into the research topics where Thomas C. T. Geuns is active.

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Featured researches published by Thomas C. T. Geuns.


Nature | 2008

Bottom-up organic integrated circuits

Edsger C. P. Smits; Simon G. J. Mathijssen; Paul A. van Hal; Sepas Setayesh; Thomas C. T. Geuns; Kees A. H. Mutsaers; Eugenio Cantatore; Harry J. Wondergem; Oliver Werzer; Roland Resel; M Martijn Kemerink; Stephan Kirchmeyer; A. M. Muzafarov; Sergei A. Ponomarenko; Bert de Boer; Paul W. M. Blom; Dago M. de Leeuw

Self-assembly—the autonomous organization of components into patterns and structures—is a promising technology for the mass production of organic electronics. Making integrated circuits using a bottom-up approach involving self-assembling molecules was proposed in the 1970s. The basic building block of such an integrated circuit is the self-assembled-monolayer field-effect transistor (SAMFET), where the semiconductor is a monolayer spontaneously formed on the gate dielectric. In the SAMFETs fabricated so far, current modulation has only been observed in submicrometre channels, the lack of efficient charge transport in longer channels being due to defects and the limited intermolecular π–π coupling between the molecules in the self-assembled monolayers. Low field-effect carrier mobility, low yield and poor reproducibility have prohibited the realization of bottom-up integrated circuits. Here we demonstrate SAMFETs with long-range intermolecular π–π coupling in the monolayer. We achieve dense packing by using liquid-crystalline molecules consisting of a π-conjugated mesogenic core separated by a long aliphatic chain from a monofunctionalized anchor group. The resulting SAMFETs exhibit a bulk-like carrier mobility, large current modulation and high reproducibility. As a first step towards functional circuits, we combine the SAMFETs into logic gates as inverters; the small parameter spread then allows us to combine the inverters into ring oscillators. We demonstrate real logic functionality by constructing a 15-bit code generator in which hundreds of SAMFETs are addressed simultaneously. Bridging the gap between discrete monolayer transistors and functional self-assembled integrated circuits puts bottom-up electronics in a new perspective.


Archive | 2004

Method of manufacturing an electronic arrangement

Bart-Hendrik Huisman; Thomas C. T. Geuns


Archive | 1997

Thin-film switching elements for electronic devices and a method of manufacturing the same

Gerrit Oversluizen; Thomas C. T. Geuns; Brian P. McGarvey; Steven C. Deane


Archive | 2008

Method of manufacturing an electrical element

Hylke B. Akkerman; Boer Bert De; Paulus Wilhelmus Maria Blom; Leeuw Dagobert M. De; Thomas C. T. Geuns; Eugenio Cantatore


Archive | 2004

Electronic arrangement including a thin film transistor having active and protective layers structured in a same two-dimensional pattern

Bart-Hendrik Huisman; Maria Estrella Mena Benito; Thomas C. T. Geuns


Archive | 2004

Verfahren zur herstellung einer elektronischen anordnung

Thomas C. T. Geuns; Bart-Hendrik Huisman; Benito Maria E. Mena


Archive | 2008

Élément de commutation électrique

Leeuw Dagobert M. De; Thomas C. T. Geuns; Brito Bianca C. De; Hal Paulus A. Van


Archive | 2004

Verfahren zur herstellung einer elektronischen anordung A method of manufacturing an electronic arrangement

Bart-Hendrik Huisman; Benito Maria E. Mena; Thomas C. T. Geuns


Archive | 2004

Verfahren zur herstellung einer elektronischen anordung

Bart-Hendrik Huisman; Benito Maria E. Mena; Thomas C. T. Geuns


Archive | 2004

Verfahren zur herstellung einer elektronischen anordnung A method of manufacturing an electronic device

Thomas C. T. Geuns; Bart-Hendrik Huisman; Benito Maria E. Mena

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