Bart J. van Wees

Electronic spin transport and spin precession in single graphene layers at room temperature

Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport, supercurrent transport has also been observed. Graphene might also be a promising material for spintronics and related applications, such as the realization of spin qubits, owing to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei. Here we report the observation of spin transport, as well as Larmor spin precession, over micrometre-scale distances in single graphene layers. The ‘non-local’ spin valve geometry was used in these experiments, employing four-terminal contact geometries with ferromagnetic cobalt electrodes making contact with the graphene sheet through a thin oxide layer. We observe clear bipolar (changing from positive to negative sign) spin signals that reflect the magnetization direction of all four electrodes, indicating that spin coherence extends underneath all of the contacts. No significant changes in the spin signals occur between 4.2 K, 77 K and room temperature. We extract a spin relaxation length between 1.5 and 2 μm at room temperature, only weakly dependent on charge density. The spin polarization of the ferromagnetic contacts is calculated from the measurements to be around ten per cent.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Light-Controlled Conductance Switching of Ordered Metal-Molecule-Metal Devices

We demonstrate reversible, light-controlled conductance switching of molecular devices based on photochromic diarylethene molecules. These devices consist of ordered, two-dimensional lattices of gold nanoparticles, in which neighboring particles are bridged by switchable molecules. We independently confirm that reversible isomerization of the diarylethenes employed is at the heart of the room-temperature conductance switching. For this, we take full advantage of the possibility to use optical spectroscopy to follow molecular switching in these samples.

Interpretation of transition voltage spectroscopy.

The promise of transition voltage spectroscopy (TVS) is that molecular level positions can be determined in molecular devices without applying extreme voltages. Here, we consider the physics behind TVS in more detail. Remarkably, we find that the Simmons model employed thus far is inconsistent with experimental data. However, a coherent molecular transport model does justify TVS as a spectroscopic tool. Moreover, TVS may become a critical test to distinguish molecular junctions from vacuum tunnel junctions.

Dispersion of graphene in ethanol using a simple solvent exchange method

A dispersion of graphene in ethanol was achieved using solvent exchange from N-methyl-2-pyrrolidone (NMP) that enables broader application of dispersed graphene.

One-Pot Functionalization of Graphene with Porphyrin through Cycloaddition Reactions

Two types of graphene-based hybrid materials, graphene-TPP (TPP=tetraphenylporphyrin) and graphene-PdTPP (PdTPP=palladium tetraphenylporphyrin), were prepared directly from pristine graphene through one-pot cycloaddition reactions. The hybrid materials were characterized by thermogravimetric analysis (TGA), by TEM, by UV/Vis, FTIR, Raman, and luminescence spectroscopy, and by fluorescence/phosphorescence lifetime measurements. The presence of the covalent linkages between graphene and porphyrin was confirmed by FTIR and Raman spectroscopy and further supported by control experiments. The presence of TPP (or PdTPP) in the hybrid material was demonstrated by UV/Vis spectroscopy, with TGA results indicating that the graphene-TPP and graphene-PdTPP hybrid materials contained approximately 18 % TPP and 20 % PdTPP. The quenching of fluorescence (or phosphorescence) and reduced lifetimes suggest excited state energy/electron transfer between graphene and the covalently attached TPP (or PdTPP) molecules.

Quantized conductance of a suspended graphene nanoconstriction

Quantization of the current flowing across a nanometre-scale constriction in graphene is usually destroyed through charge-scattering from rough edges and impurities. But by using high-quality suspended samples and a constriction whose length is shorter than its width, conductance quantization in graphene has now been demonstrated.

Large‐Yield Preparation of High‐Electronic‐Quality Graphene by a Langmuir–Schaefer Approach

Graphene was discovered less than five years ago and proved the existence of pure two-dimensional systems, thought physically impossible in the past. It appeared very quickly that this exceptionalmaterial showedmany outstanding properties. Since electrons and holes in graphene have potential for high carrier mobilities, this novel material has become an exciting new playground for physicists; properties such as the halfinteger quantum Hall effect at room temperature, spin transport, high elasticity, electromechanicalmodulation, and ferromagnetism all contribute to the fame of graphene. Since the first experiments conducted five years ago on micromechanically cleaved graphite (the renowned but lowyield adhesive tape method), the growing appeal of graphene’s properties has focused much of the research attention towards the conception of a reliable method for large-scale production. Recent advances using chemical vapor deposition and successful transfer of the prepared films to arbitrary substrates brought impressive results in terms of crystalline quality of the layers and consequent electrical and mechanical properties. Notwithstanding these results, truly controllable singleor multilayer large-scale deposition is still a pressing issue and a method for depositing high-quality graphene at variable coverage on an arbitrary surface is not yet available. Moreover, for practical application or simply for fundamental research purposes, good adhesion of graphene to the substrate is of great importance.

Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is probably related to the changed substrate, while the cause for the small value of D(S) remains an open question.

Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer

The recent observation of a fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron–electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr, and Nb) because only those are not attacked by the reactive acid etching fabrication step. Here we show a new technique that leads to mechanically stable suspended high mobility graphene devices and is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm2/Vs at an electron carrier density of n = 5.0 × 109 cm−2 at 77 K. This technique paves the way toward complex suspended graphene based spintronic, superconducting, and other types of devices.