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Dive into the research topics where Behrang H. Hamadani is active.

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Featured researches published by Behrang H. Hamadani.


Nature Materials | 2008

Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

David J. Gundlach; J. E. Royer; Sungkyu Park; Sankar Subramanian; Oana D. Jurchescu; Behrang H. Hamadani; Andrew J. Moad; Regis J. Kline; Lucile C. Teague; Oleg A. Kirillov; Curt A. Richter; James G. Kushmerick; L. J. Richter; Sean Parkin; Thomas N. Jackson; John E. Anthony

The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.


Applied Physics Letters | 2009

Substrate-dependent interface composition and charge transport in films for organic photovoltaics

David S. Germack; Calvin Chan; Behrang H. Hamadani; Lee J. Richter; Daniel A. Fischer; David J. Gundlach; Dean M. DeLongchamp

The buried interface composition of polymer-fullerene blends is found by near-edge x-ray absorption fine structure spectroscopy to depend on the surface energy of the substrate upon which they are cast. The interface composition determines the type of charge transport measured with thin film transistors. These results have implications for organic photovoltaics device design and the use of transistors to evaluate bulk mobility in blends.


Applied Physics Letters | 2007

Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1

Behrang H. Hamadani; David J. Gundlach; Iain McCulloch; Martin Heeney

We report on charge transport in organic field-effect transistors based on poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as the active polymer layer with saturation field-effect mobilities as large as 1cm2V−1s−1. This is achieved by employing Pt instead of the commonly used Au as the contacting electrode and allows for a significant reduction in the metal/polymer contact resistance. The mobility increases as a function of decreasing channel length, consistent with a Poole-Frenkel model of charge transport, and reaches record mobilities of 1cm2V−1s−1 or more at channel lengths on the order of few microns in an undoped solution-processed polymer cast on an oxide gate dielectric.


IEEE Electron Device Letters | 2009

A Flexible Solution-Processed Memristor

Nadine Gergel-Hackett; Behrang H. Hamadani; Barbara Dunlap; John S. Suehle; Curt A. Richter; David J. Gundlach

A rewriteable low-power operation nonvolatile physically flexible memristor device is demonstrated. The active component of the device is inexpensively fabricated at room temperature by spinning a TiO2 sol gel on a commercially available polymer sheet. The device exhibits memory behavior consistent with a memristor, demonstrates an on/off ratio greater than 10 000 : 1, is nonvolatile for over 1.2 times 106 s, requires less than 10 V, and is still operational after being physically flexed more than 4000 times.


Applied Physics Letters | 2008

Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors

Oana D. Jurchescu; Behrang H. Hamadani; Hao D. Xiong; Sungkyu Park; Sankar Subramanian; Neil M. Zimmerman; John E. Anthony; Thomas N. Jackson; David J. Gundlach

We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1∕f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel.


Nano Letters | 2010

Origin of Nanoscale Variations in Photoresponse of an Organic Solar Cell

Behrang H. Hamadani; Suyong S. Jung; Paul M. Haney; Lee J. Richter; Nikolai B. Zhitenev

Photogenerated charge transport in bulk heterojunction (BHJ) solar cells is strongly dependent on the active layer nanomorphology resulting from phase segregation. Here, we systematically study the nanoscale photocurrent response from BHJs based on poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester (P3HT-PCBM) with a photoconductive atomic force microscope (PCAFM). The photocurrent is either collected directly by the tip or through nanopatterned metal contacts. The photoresponse measured at the top surface shows significant inhomogeneity on the length scale of 100-500 nm with large low-efficiency regions, consistent with existence of a P3HT-rich skin layer of approximately 10 nm thick. The measurements with the nanocontacts validate the PCAFM results and demonstrate that the inhomogeneity averages to the conventional device result. Additionally, we use an ultralow angle microtomy (ULAM) technique to slice the active layer and create wedges along these cuts for probing of nanomorphology in the bulk. AFM images show a striking contrast between the top surface and the ULAM exposed material, revealing much finer features related to phase segregation below the skin layer and sub-100 nm length scales for charge transport.


Applied Physics Letters | 2008

Insights into the characterization of polymer-based organic thin-film transistors using capacitance-voltage analysis

Behrang H. Hamadani; Curt A. Richter; John S. Suehle; David J. Gundlach

Frequency dependent capacitance-voltage characteristics of organic thin-film transistors based on poly(3-hexylthiophene) as the active polymer layer are investigated. The frequency response of the channel capacitance in accumulation is examined through an analytical transmission line model, with the effect of contact resistances included in the model to account for deviations from ideal behavior. The model provides an excellent fit to the data. Furthermore, we show that the technique can be used to extract device parameters such as the mobility and the contact resistance and quantitative information on the influence of charge trapping on transport.


Journal of Applied Physics | 2007

Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

Behrang H. Hamadani; Curt A. Richter; David J. Gundlach; Regis J. Kline; Iain McCulloch; Martin Heeney

We report on a strong field-dependent mobility in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show a more pronounced dependence on channel length as compared with as-cast devices. Analysis reveals that the contact effects in both sets of devices are negligible from room temperature down to ≈100K. We show that this field dependence is consistent with a Poole-Frenkel model of mobility. Finally, the nonlinear transport data for short channel devices are modeled consistently in the Poole-Frenkel framework over a broad temperature range.


Journal of Applied Physics | 2011

Imaging of nanoscale charge transport in bulk heterojunction solar cells

Behrang H. Hamadani; Nadine Gergel-Hackett; Paul M. Haney; Nikolai B. Zhitenev

We have studied the local charge transport properties of organic bulk heterojunction solar cells based on the blends of poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester with a photoconductive atomic force microscope (PCAFM). We explore the role of morphology on transport of photogenerated electrons or holes by careful consideration of the sample geometry and the choice of the atomic force microscope (AFM) tip. We then consider the role of the film/tip contact on the local current-voltage characteristics of these structures and present a model based on a drift and diffusion description of transport. We find that our simple 1D model can only reproduce qualitative features of the data using unphysical parameters, indicating that more sophisticated modeling is required to capture all the nonideal characteristics of the AFM transport measurements. Our results show that interpretation of PCAFM contrast and its relation to material morphology or charge transport is not very straightforward.


Applied Optics | 2012

Versatile light-emitting-diode-based spectral response measurement system for photovoltaic device characterization.

Behrang H. Hamadani; John F. Roller; Brian P. Dougherty; Howard W. Yoon

An absolute differential spectral response measurement system for solar cells is presented. The system couples an array of light emitting diodes with an optical waveguide to provide large area illumination. Two unique yet complementary measurement methods were developed and tested with the same measurement apparatus. Good agreement was observed between the two methods based on testing of a variety of solar cells. The first method is a lock-in technique that can be performed over a broad pulse frequency range. The second method is based on synchronous multifrequency optical excitation and electrical detection. An innovative scheme for providing light bias during each measurement method is discussed.

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David J. Gundlach

National Institute of Standards and Technology

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John F. Roller

National Institute of Standards and Technology

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Nikolai B. Zhitenev

National Institute of Standards and Technology

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Howard W. Yoon

National Institute of Standards and Technology

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Brian P. Dougherty

National Institute of Standards and Technology

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Curt A. Richter

National Institute of Standards and Technology

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Paul M. Haney

National Institute of Standards and Technology

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Daniel Josell

National Institute of Standards and Technology

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Lee J. Richter

National Institute of Standards and Technology

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