Bengt Edholm

A self-aligned lateral bipolar transistor realized on SIMOX-material

Lateral bipolar transistors, compatible with a CMOS process on SOI, have been fabricated on high quality SIMOX material. A self-aligned nitride spacer technique is used for base width definition and for emitter alignment. Current gains of 40 and high collector-emitter breakdown voltages have been obtained for transistors with base widths of 4000 AA. >

A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology

A novel high-voltage DMOS transistor with a low doped extended gate is presented. The device withstands 240 V in the off-state and has a specific on-resistance of 24 m/spl Omega/cm/sup 2/. The transconductance is 60 mS/mm at 3 V gate voltage. The sub-micron channel length gives small-signal high-frequency performance as f/sub T/=2.8 GHz and f/sub max/=5.8 GHz and the unilateral power gain at 900 MHz is over 15 dB. The dependence of breakdown voltage and on-resistance on gate doping level and polysilicon gate length is investigated with device simulations. It is found that the breakdown voltage is highly dependent on the gate doping level.

Transient Measurements of Heat Distribution in Devices Fabricated on Silicon-On-Diamond Material.

Thermal properties of devices fabricated on different silicon-on-diamond (SOD) and silicon-on-insulator (SOI) structures have been investigated. A new method for transient measurements of temperatu ...

High current gain hybrid lateral bipolar operation of DMOS transistors

This paper describes a new operation mode of the DMOS transistor. By utilizing the diffused channel region as base and connecting it to the gate, hybrid lateral bipolar operation is obtained in the device. Current gain higher than 2000 and a cut-off frequency of 1.6 GHz are achieved. Superior breakdown voltages were obtained compared to previously published hybrid devices. It is demonstrated that hybrid operation of a DMOS transistor is a simple way to implement a high gain lateral bipolar transistor, without complex sub-/spl mu/m processing. >

Silicon-on-diamond MOS-transistors with thermally grown gate oxide

Summary form only given. Self-heating in Silicon-On-Insulator (SOI) devices has during the past years attracted lots of attention and is a problem that remains to be solved. It has, furthermore, been shown that in smart power devices, thick buried oxides of 3 /spl mu/m or more are desired to prevent the substrate potential to lower breakdown voltages. However, these thicker buried oxides will only aggravate the thermal limitations imposed by the buried oxide. Due to the outstanding thermal properties of diamond compared to silicon dioxide, it would consequently be advantageous if silicon dioxide could be replaced with diamond in future SOI materials. Even though it has been shown that diamond is compatible with conventional silicon processing, no MOS-transistors with thermally grown gate oxide has been manufactured up to date, due to the difficulty in protecting diamond during furnace oxidations. In this paper Silicon-On-Diamond (S-O-D) MOS-transistors with thermally grown gate oxide are presented for the first time.

Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process

A new type of DMOS transistor aimed at high voltage power amplifications in the Giga-Hertz region is integrated into a standard CMOS process. By optimising the design for high voltage and high frequency, remarkable good electrical behaviour is obtained. The frequency performance was measured to f/sub T/=4.6 GHz and f/sub MAX/=10 GHz for a device with a channel length of 0.3 /spl mu/m and a breakdown voltage V/sub BR//spl ges/60 V. For a similar device fabricated on the same chip and using the same process flow, but designed to handle voltages above 300 V, f/sub T/=1.8 GHz and f/sub MAX/=3.2 GHz were measured.

Very high current gain enhancement by substrate biasing of lateral bipolar transistors on thin SOI

Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI

Reliability evaluation of manufacturing processes for bipolar and MOS devices on silicon-on-diamond materials

Reliability Evaluation of Manufacturing Processes for Bipolar and MOS Devices on Silicon-On-Diamond Materials

A Lateral Bipolar Transistor Concept on SOI using a Self-Aligned Base Definition Technique

A lateral bipolar transistor technology for the fabrication of high performance lateral devices on SOI is presented. The presented technology makes use of selective etching procedures and time controlled wet etching to define the basewidth of the devices. 2-D process simulation results are presented together with 2-D device simulations showing the applicability of the proposed process.

Electrical investigation of the silicon/diamond interface

A new method for measuring the interface properties, using diamond terminated silicon p-n diodes, is used to quantify the electrical quality and to determine the conduction mechanism of the silicon ...