Benjamin V. Fasano

An advanced multichip module (MCM) for high-performance UNIX servers

In 2001, IBM delivered to the marketplace a high-performance UNIX?®-class eServer based on a four-chip multichip module (MCM) code named Regatta. This MCM supports four POWER4 chips, each with 170 million transistors, which utilize the IBM advanced copper back-end interconnect technology. Each chip is attached to the MCM through 7018 flip-chip solder connections. The MCM, fabricated using the IBM high-performance glass-ceramic technology, features 1.7 million internal copper vias and high-density top-surface contact pad arrays with 100-?µm pads on 200-?µm centers. Interconnections between chips on the MCM and interconnections to the board for power distribution and MCM-to-MCM communication are provided by 190 meters of co-sintered copper wiring. Additionally, the 5100 off-module connections on the bottom side of the MCM are fabricated at a 1-mm pitch and connected to the board through the use of a novel land grid array technology, thus enabling a compact 85-mm ?? 85-mm module footprint that enables 8- to 32-way systems with processors operating at 1.1 GHz or 1.3 GHz. The MCM also incorporates advanced thermal solutions that enable 156 W of cooling per chip. This paper presents a detailed overview of the fabrication, assembly, testing, and reliability qualification of this advanced MCM technology.

End-to-End Integration of a Multi-die Glass Interposer for System Scaling Applications

The processes key to enabling 3D manufacturing, namely, bond, backgrind, and through silicon via (TSV) reveal, are extended for 300 mm glass substrates to fabricate a heterogeneous, multi-die, 2.5D glass interposer. Based on an existing silicon interposer offering, the glass interposer is comprised of multi-level “device” side copper wiring, with line space (L/S) of ≤ 2.5 μm, built using damascene techniques, a 55 μm glass core with through glass vias (TGVs), and multiple UBM levels finished with tin silver (SnAg) C4 bumps. The 300mm TGV wafers are processed on existing silicon wafer manufacturing equipment following established, integrated silicon process flows. Once fully processed, the glass wafers are diced, and the interposer joined to a ceramic carrier by mass reflow. Sub-assemblies are then underfilled, the top die attached, and lidding completed. The final assemblies are tested to evaluate performance of chip to chip interconnects, chip-to-package (through interposer) interconnects, and chip-to-PCB (through interposer and package) interconnects. Results of loss vs frequency measurements are compared, for the glass interposer against the existing silicon interposer results.