Bhagawan Sahu

Intrinsic and Rashba spin-orbit interactions in graphene sheets

Starting from a microscopic tight-binding model and using second-order perturbation theory, we derive explicit expressions for the intrinsic and Rashba spin-orbit interaction induced gaps in the Dirac-like low-energy band structure of an isolated graphene sheet. The Rashba interaction parameter is first order in the atomic carbon spin-orbit coupling strength

Ab initio theory of gate induced gaps in graphene bilayers

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Band structure of ABC-stacked graphene trilayers

and first order in the external electric field

Energy gaps, magnetism, and electric-field effects in bilayer graphene nanoribbons

E

Effects of edge magnetism and external electric field on energy gaps in multilayer graphene nanoribbons

perpendicular to the graphene plane, whereas the intrinsic spin-orbit interaction which survives at

Density functional study of ternary topological insulator thin films

E=0

Effects of magnetism and electric field on the energy gap of bilayer graphene nanoflakes

is second order in

Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects

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Edge Saturation effects on the magnetism and band gaps in multilayer graphene ribbons and flakes

. The spin-orbit terms in the low-energy effective Hamiltonian have the form proposed recently by Kane and Mele. Ab initio electronic structure calculations were performed as a partial check on the validity of the tight-binding model.

Density functional theory based study of graphene and dielectric oxide interfaces

We study the gate-voltage induced gap that occurs in graphene bilayers using ab initio density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the ab initio calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.