Bin Ming

Development of the metrology and imaging of cellulose nanocrystals

The development of metrology for nanoparticles is a significant challenge. Cellulose nanocrystals (CNCs) are one group of nanoparticles that have high potential economic value but present substantial challenges to the development of the measurement science. Even the largest trees owe their strength to this newly appreciated class of nanomaterials. Cellulose is the worlds most abundant natural, renewable, biodegradable polymer. Cellulose occurs as whisker-like microfibrils that are biosynthesized and deposited in plant material in a continuous fashion. The nanocrystals are isolated by hydrolyzing away the amorphous segments leaving the acid resistant crystalline fragments. Therefore, the basic raw material for new nanomaterial products already abounds in nature and is available to be utilized in an array of future materials. However, commercialization requires the development of efficient manufacturing processes and nanometrology to monitor quality. This paper discusses some of the instrumentation, metrology and standards issues associated with the ramping up for production and use of CNCs.

Review of current progress in nanometrology with the helium ion microscope

Scanning electron microscopy has been employed as an imaging and measurement tool for more than 50 years and it continues as a primary tool in many research and manufacturing facilities across the world. A new challenger to this work is the helium ion microscope (HIM). The HIM is a new imaging and metrology technology. Essentially, substitution of the electron source with a helium ion source yields a tool visually similar in function to the scanning electron microscope, but very different in the fundamental imaging and measurement process. The imaged and measured signal originates differently than in the scanning electron microscope and that fact and its single atom source diameter may be able to push the obtainable resolution lower, provide greater depth-of-field and ultimately improve the metrology. Successful imaging and metrology with this instrument entails understanding and modeling of new ion beam/specimen interaction physics. As a new methodology, HIM is beginning to show promise and the abundance of potentially advantageous applications for nanometrology has yet to be fully exploited. This paper discusses some of the progress made at NIST in collaboration with IBM to understand the science behind this new technology.

New insights into subsurface imaging of carbon nanotubes in polymer composites via scanning electron microscopy

Despite many studies of subsurface imaging of carbon nanotube (CNT)-polymer composites via scanning electron microscopy (SEM), significant controversy exists concerning the imaging depth and contrast mechanisms. We studied CNT-polyimide composites and, by three-dimensional reconstructions of captured stereo-pair images, determined that the maximum SEM imaging depth was typically hundreds of nanometers. The contrast mechanisms were investigated over a broad range of beam accelerating voltages from 0.3 to 30 kV, and ascribed to modulation by embedded CNTs of the effective secondary electron (SE) emission yield at the polymer surface. This modulation of the SE yield is due to non-uniform surface potential distribution resulting from current flows due to leakage and electron beam induced current. The importance of an external electric field on SEM subsurface imaging was also demonstrated. The insights gained from this study can be generally applied to SEM nondestructive subsurface imaging of conducting nanostructures embedded in dielectric matrices such as graphene-polymer composites, silicon-based single electron transistors, high resolution SEM overlay metrology or e-beam lithography, and have significant implications in nanotechnology.

Cellulose nanocrystals the next big nano-thing?

Biomass surrounds us from the smallest alga to the largest redwood tree. Even the largest trees owe their strength to a newly-appreciated class of nanomaterials known as cellulose nanocrystals (CNC). Cellulose, the worlds most abundant natural, renewable, biodegradable polymer, occurs as whisker like microfibrils that are biosynthesized and deposited in plant material in a continuous fashion. Therefore, the basic raw materials for a future of new nanomaterials breakthroughs already abound in the environment and are available to be utilized in an array of future materials once the manufacturing processes and nanometrology are fully developed. This presentation will discuss some of the instrumentation, metrology and standards issues associated with nanomanufacturing of cellulose nanocrystals. The use of lignocellulosic fibers derived from sustainable, annually renewable resources as a reinforcing phase in polymeric matrix composites provides positive environmental benefits with respect to ultimate disposability and raw material use. Today we lack the essential metrology infrastructure that would enable the manufacture of nanotechnology-based products based on CNCs (or other new nanomaterial) to significantly impact the U.S. economy. The basic processes common to manufacturing - qualification of raw materials, continuous synthesis methods, process monitoring and control, in-line and off-line characterization of product for quality control purposes, validation by standard reference materials - are not generally in place for nanotechnology based products, and thus are barriers to innovation. One advantage presented by the study of CNCs is that, unlike other nanomaterials, at least, cellulose nanocrystal manufacturing is already a sustainable and viable bulk process. Literally tons of cellulose nanocrystals can be generated each day, producing other viable byproducts such as glucose (for alternative fuel) and gypsum (for buildings).There is an immediate need for the development of the basic manufacturing metrology infrastructure to implement fundamental best practices for manufacturing and in the determination of properties for these for nanoscale materials and the resultant products.

10nm three-dimensional CD-SEM metrology

The shape and dimensions of a challenging pattern have been measured using a model-based library scanning electron microscope (MBL SEM) technique. The sample consisted of a 4-line repeating pattern. Lines were narrow (10 nm), asymmetric (different edge angles and significant rounding on one corner but not the other), and situated in a complex neighborhood, with neighboring lines as little as 10 nm or as much as 28 nm distant. The shape cross-section determined by this method was compared to transmission electron microscopy (TEM) and critical dimension small angle x-ray scattering (CD-SAXS) measurements of the same sample with good agreement. A recently-developed image composition method was used to obtain sharp SEM images, in which blur from vibration and drift were minimized. A Monte Carlo SEM simulator (JMONSEL) produced a model-based library that was interpolated to produce the best match to measured SEM images. Three geometrical and instrument parameterizations were tried. The first was a trapezoidal geometry. In the second one corner was significantly rounded. In the last, the electron beam was permitted to arrive with stray tilt. At each stage, the fit to the data improved by a statistically significant amount, demonstrating that the measurement remained sensitive to the new parameter. Because the measured values represent the average unit cell, the associated repeatabilities are at the tenths of a nanometer level, similar to scatterometry and other area-averaging techniques, but the SEM’s native high spatial resolution also permitted observation of defects and other local departures from the average.

Optimizing hybrid metrology: rigorous implementation of Bayesian and combined regression

Abstract. Hybrid metrology, e.g., the combination of several measurement techniques to determine critical dimensions, is an increasingly important approach to meet the needs of the semiconductor industry. A proper use of hybrid metrology may yield not only more reliable estimates for the quantitative characterization of three-dimensional (3-D) structures but also a more realistic estimation of the corresponding uncertainties. Recent developments at the National Institute of Standards and Technology feature the combination of optical critical dimension measurements and scanning electron microscope results. The hybrid methodology offers the potential to make measurements of essential 3-D attributes that may not be feasible otherwise. However, combining techniques gives rise to essential challenges in error analysis and comparing results from different instrument models, especially the effect of systematic and highly correlated errors in the measurement on the χ2 function that is minimized. Both hypothetical examples and measurement data are used to illustrate solutions to these challenges.

Recent Progress in Understanding the Imaging and Metrology using the Helium Ion Microscope

Nanotechnology is pushing imaging and measurement instrument technology to high levels of required performance. As this continues, new barriers confronting innovation in this field are encountered. Particle beam instrument resolution remains one of these barriers. A new tool for imaging and metrology for nanotechnology is the scanning Helium Ion Microscope (HIM). The HIM is a new approach to imaging and metrology for nanotechnology which may be able to push this barrier lower. As a new methodology, it is just beginning to show promise and the number of potentially advantageous applications for nanotechnology and nanometrology has yet to be fully exploited. This presentation will discuss some of the progress made at NIST in collaboration with the manufacturing community in understanding the imaging and metrology for this new technology.

Contour metrology using critical dimension atomic force microscopy

The critical dimension atomic force microscope (CD-AFM), which is used as a reference instrument in lithography metrology, has been proposed as a complementary instrument for contour measurement and verification. Although data from CD-AFM is inherently three dimensional, the planar two-dimensional data required for contour metrology is not easily extracted from the top-down CD-AFM data. This is largely due to the limitations of the CD-AFM method for controlling the tip position and scanning. We describe scanning techniques and profile extraction methods to obtain contours from CD-AFM data. We also describe how we validated our technique, and explain some of its limitations. Potential sources of error for this approach are described, and a rigorous uncertainty model is presented. Our objective is to show which data acquisition and analysis methods could yield optimum contour information while preserving some of the strengths of CD-AFM metrology. We present comparison of contours extracted using our technique to those obtained from the scanning electron microscope (SEM), and the helium ion microscope (HIM).

Accurate nanometer-scale imaging and measurements with SEM

Scanning electron microscopes (SEMs) are incredibly versatile instruments for millimeter to nanometer scale imaging and measurements of size and shape. New methods to improve repeatability and accuracy have been implemented on the so-called Reference SEMs at the National Institute of Standards and Technology (NIST). These methods include: 1) very fast digital imaging and real-time corrective composition of SEM images, showing superiority over both traditional fast or slow image collection methods; 2) high-precision sample stage with laser interferometry, providing traceability and compensation for stage drift and vibration with sub-nanometer performance; and 3) contamination and charging mitigation through hydrogen and oxygen plasma cleaning. These new methods can be applied in other SEMS as well to realize quantitative scanning electron microscopy.

Understanding Imaging and Metrology with the Helium Ion Microscope

One barrier to innovation confronting all phases of nanotechnology is the lack of accurate metrology for the characterization of nanomaterials. Ultra‐high resolution microscopy is a key technology needed to achieve this goal. But, current microscope technology is being pushed to its limits. The scanning and transmission electron microscopes have incrementally improved in performance and other scanned probe technologies such as atomic force microscopy, scanning tunneling microscopy and focused ion beam microscopes have all been applied to nanotechnology with various levels of success. A relatively new tool for nanotechnology is the scanning helium ion microscope (HIM). The HIM is a new complementary imaging and metrology technology for nanotechnology which may be able to push the current resolution barrier lower. But, successful imaging and metrology with this instrument entails new ion beam/specimen interaction physics which must be fully understood. As a new methodology, HIM is beginning to show promise ...