Bo H. Vanderberg
Axcelis Technologies
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Bo H. Vanderberg.
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on | 2002
Michael A. Graf; Bo H. Vanderberg; Victor M. Benveniste; Daniel R. Tieger; John Ye
The need for ultra-shallow junction formation in advanced devices makes the development of high throughput ion implantation solutions at very low (sub-keV) energies increasingly more important. The fundamental challenges confronting the implant tool designer tasked with delivering these high throughput solutions are examined in this paper. A discussion of space charge and its implications for low energy beam transport is presented. The origins behind the shape of the classic beam current versus energy curve are detailed and the historical evolution of this curve is shown. Demonstration of the effects of space charge is made via consideration of beam current density and beam potential profiles under a variety of space charge conditions and highlights the importance of efficient space charge neutralization in the generation and transport of low energy beams. Issues resulting from space charge effects and related to the control of beam size, shape, and stability are outlined in the context of their importance to high productivity high current tool design. Improvements to ion source and beam extraction efficiency, and to overall beamline acceptance, have been the dominant historical paths leading to incremental improvements in low energy beam current performance. The adoption into production-worthy tools of deceleration mode and, more recently, molecular implantation for n-type dopants has further expanded the usable energy range of these leading edge tools. Most recently, significant developments to actively neutralize space charge have enabled even more substantial low energy beam current improvements. Performance details underlying this newest technology are presented.
ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006 | 2006
Kevin W. Wenzel; Andrew M. Ray; Bo H. Vanderberg; Robert D. Rathmell
The emergence of higher‐dose and lower‐energy halo and source‐drain extension implants for 90 and 65‐nm nodes drove the design of Axcelis’ Optima MD ion implanter. The Optima MD extends the proven process performance of traditional medium‐current implanters over an energy range of 1 keV to 250 keV for singly‐charged ion species with beam currents ranging from 1 pμA to 4800 pμA. The Optima MD comprises a hybrid‐scan beamline architecture, a new endstation, and a new control system that offers the user more flexibility in data acquisition and statistical process control. The beamline has the capability to provide milliamp beam currents in the low energy (<5 keV) range. The use of an aggressive final deceleration (decel) in combination with a final angular energy filter (AEF) enables this productivity improvement of higher beam currents while mitigating the risk of energy contamination. In this paper the new beam transport system that reduces space charge blowup and maintains focus control at low energies is...
Archive | 2004
Robert D. Rathmell; Bo H. Vanderberg; Yongzhang Huang
Archive | 2005
Bo H. Vanderberg; Andrew M. Ray; Kevin W. Wenzel
Archive | 2007
Bo H. Vanderberg; Robert D. Rathmell; Edward C. Eisner
Archive | 2005
Robert D. Rathmell; Bo H. Vanderberg; Youngzhang Huang
Archive | 2009
Manny Sieradzki; Patrick Splinter; Bo H. Vanderberg
Archive | 2012
Bo H. Vanderberg; Steven C. Hays; Andy Ray
Archive | 2007
Bo H. Vanderberg; Edward C. Eisner
Archive | 2007
Bo H. Vanderberg; William F. Divergilio