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Dive into the research topics where William F. Divergilio is active.

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Featured researches published by William F. Divergilio.


ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006 | 2006

ClusterBoron™ Implants on a High Current Implanter

Daniel R. Tieger; William F. Divergilio; Edward C. Eisner; Mark Harris; T. J. Hsieh; John Miranda; William P. Reynolds; Tom Horsky

Advanced p‐junction process tool throughput continues to be one of the principal drivers of the industry. First results from an octadecaborane (B18H22) ClusterIon® source integrated on an existing high current implant tool are presented. Beam current, throughput and process results are reported. The dose multiplication effect of the use of B18H22 means that an electrical current of 1mA produces a dopant flux equivalent to 18mA, while the energy equipartition means that a 20keV octadecaborane ion is process equivalent to a 1keV boron beam. Some modifications to a traditional high current beamline design were made in order to take advantage of the opportunities presented by this new ion source. A somewhat larger extraction slot was used and this, coupled with the fact that the ions have a large mass (210 amu) and therefore have high magnetic rigidity even at modest energies, drove the optics design toward a parallel‐to‐point configuration. Good mass resolution and control of beam size were demonstrated. Beam currents and throughput that are significantly higher than those available from traditional high current implanters were achieved, along with good process results.Advanced p‐junction process tool throughput continues to be one of the principal drivers of the industry. First results from an octadecaborane (B18H22) ClusterIon® source integrated on an existing high current implant tool are presented. Beam current, throughput and process results are reported. The dose multiplication effect of the use of B18H22 means that an electrical current of 1mA produces a dopant flux equivalent to 18mA, while the energy equipartition means that a 20keV octadecaborane ion is process equivalent to a 1keV boron beam. Some modifications to a traditional high current beamline design were made in order to take advantage of the opportunities presented by this new ion source. A somewhat larger extraction slot was used and this, coupled with the fact that the ions have a large mass (210 amu) and therefore have high magnetic rigidity even at modest energies, drove the optics design toward a parallel‐to‐point configuration. Good mass resolution and control of beam size were demonstrated. Bea...


Archive | 2001

Integrated power oscillator RF source of plasma immersion ion implantation system

William F. Divergilio; Peter L. Kellerman; Kevin Thomas Ryan


Archive | 2001

Method and system for ion beam containment in an ion beam guide

Victor M. Benveniste; William F. Divergilio; John Ye


Archive | 2001

Method and system for microwave excitation of plasma in an ion beam guide

Victor M. Benveniste; William F. Divergilio; Frank Sinclair


Archive | 2007

ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY

Victor M. Benveniste; Peter L. Kellerman; William F. Divergilio


Archive | 2003

Unipolar electrostatic quadrupole lens and switching methods for charged beam transport

William F. Divergilio; Youngzhang Huang


Archive | 2006

Methods for rapidly switching off an ion beam

Michael A. Graf; Edward C. Eisner; William F. Divergilio; Daniel R. Tieger


Archive | 2007

Plasma electron flood for ion beam implanter

Bo H. Vanderberg; William F. Divergilio


Archive | 2011

Post Implant Wafer Heating Using Light

William D. Lee; Marvin Farley; William F. Divergilio


Archive | 2006

Fluorine based cleaning of an ion source

William F. Divergilio; Daniel R. Tieger; William P. Reynolds; Christopher W. Hodgdon; Sean Joyce

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John Ye

Axcelis Technologies

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