Bo Yeon Hwang

Plasmonic chromatic electrode with low resistivity

We report on the optical and electrical properties of a novel plasmonic chromatic electrode (PCE). The PCE was composed of a metallic nano-hole array and ITO layer as a dielectric for electrical property. The structure design was optimized to obtain the matched condition between surface plasmon modes at the top and bottom metal-dielectric interfaces for high transmittance. The fabricated PCEs have high transmittance of 25~40% and low resistivity (level of 10−5 Ωcm) compared to conventional electrodes. Due to the multi-functionality and simple structure of PCEs, we predict the PCEs can be applied for advanced industrial use such as, high resolution, flexible, and stretchable devices.

Author Correction: Plasmonic Chromatic Electrode with Low Resistivity

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Printed silicon broadband membrane reflectors by laser interference lithography

We report on printed silicon photonic crystal broadband membrane reflectors (MRs) based on laser interference lithography (LIL) patterning. Single-layer photonic crystal membrane which was formed by the LIL technique on a silicon-on-insulator (SOI) wafer was transferred by the contact printing method using the polydimethylsiloxane (PDMS) stamp on a glass substrate. These broadband silicon-MRs show high-reflectivity of 95 % around 1200 nm wavelength with bandwidth of about 100 nm. This simplest and easiest method to fabricate broadband MRs has great potential for many types of optoelectronic and photonic devices.

Plasmonic color filters for large area display devices fabricated by laser interference lithography

We demonstrated a plasmonic color filter adopting laser interference lithography technology. Nano scaled hole arrays were obtained with a regular spatial period through the whole glass substrate area of 2.5 cm × 2.5 cm.