Boris I. Podlepetsky

Metal-oxide gas sensor high-selective to ammonia

Metrological and performance characteristics of a metal-oxide sensor high-selective to ammonia in the presence of methane, carbon monoxide, and water vapors are presented. The specific feature of the design consists in using pulsed sensor heating as the main factor for improved selectivity to ammonia. The ammonia threshold achieved during the pulse-type temperature modulation is 5 × 10−4% vol.

Integrated hydrogen sensors based on MIS transistor sensitive elements: Modeling of characteristics

The upgraded electrophysical and electrical models of MIS transistor sensitive elements (TSE) are presented for calculating the metrological and performance characteristics of integrated hydrogen sensors and gas-analysis microsystems based on them.

Total Ionizing Dose Effects in Hydrogen Sensors Based on MISFET

Total ionizing dose effects in hydrogen sensors based on metal-insulator-semiconductor field-effect transistor (MISFET) were investigated in this paper. The experimental results of influence electron irradiation on MISFET based on Pd-Ta2O5-SiO2-Si structure are presented. The models of hydrogen and radiation sensitivities of MISFET threshold voltage and electrical characteristics have been developed. These models can be used to interpret the experimental data, to estimate the critical doses and to forecast the performance of the hydrogen MISFET-sensors under action of ionizing radiation.

Modeling of radiation sensitivity of hydrogen sensors based on MISFET

The paper presents the electrophysical and electrical models of hydrogen and radiation sensitivities of the integrated sensors with MISFET sensing elements based on the structure Pd–Ta2O5–SiO2–Si. The models take into account the influence of electrical circuits and modes, chip temperatures, surface-state density and radiation parameters on the hydrogen sensitivity of the sensors.

Effect of Electron Irradiation on MISFET Integrated Hydrogen Sensors

The electron irradiation effect on hydrogen sensitivity of the integrated sensors based on MISFET has been investigated. The estimation of critical doses has been done according to developed models of hydrogen and radiation sensitivities of MISFET sensors.

Radiation Sensitivity Modeling Technique of Sensors’ Mis-Transistor Elements

The technique of estimating the parameters models of MISTs (the field-effect transistors with metal-insulator-semiconductor structures) is proposed to predict the radiation sensitivity of the sensors based on MISTs. The technique allows distinguishing the contributions of charges in the insulator and the surface states, taking into account the effect of irradiation modes on the transistor characteristics.

Detection of gas traces using semiconductor sensors, ion mobility spectrometry, and mass spectrometry:

This article deals with the state-of-the-art instrumentation and application in the field of solid state gas sensorics, ion mobility spectrometry and mass-spectrometry-related research for the detection and measurements of low gas and vapor concentrations. The advantages and disadvantages of gas-analytical devices and systems are discussed, as well as the possibilities of its complex and/or complementary applications. Ion mobility spectrometry–mass spectrometry and subsequent techniques based on solid-state gas sensors are proposed for planned medical study.

Influence of chip temperature on the hydrogen sensitivity of MISFET-based sensors

The chip temperature influence on the hydrogen sensitivity of the metal-insulator- semiconductor field-effect transistor (MISFET) with structure Pd-Ta2O5-SiO2-Si was investigated. MISFET sensing element was integrated on silicon chip together with (p-n)- junction temperature sensor and heater-resistor. There were measured the hydrogen responses of the MISFET threshold voltage for room and higher chip temperatures. The threshold voltage VT as a function of hydrogen concentration C was determined for different temperatures T. The models of hydrogen and temperature sensitivities based on the experimental dependencies of VT (C, T) are presented in this work.

Hazardous Gases Sensing: Influence of Ionizing Radiation on Hydrogen Sensors

The electron irradiation effect on characteristics of the hydrogen sensors based on metal-insulator-semiconductor transistor structures has been investigated by experiment. The models of hydrogen and radiation sensitivity were developed. Using these models the forecast of functional performance of the hydrogen sensors under ionizing radiation and the estimation of critical doses has been done.