Alexander S. Rodin

ELDRS in SiGe transistors for room and low-temperature irradiation

Abstract The possible physical mechanism of ELDRS effect in the silicon-germanium (SiGe) bipolar transistors for room and low-temperature irradiation is described. The mechanism is connected with narrowing of the bandgap in transistor base region due to Ge content.

True dose rate physical mechanism of ELDRS effect in bipolar devices

Abstract Physical mechanism of enhanced low dose rate sensitivity effect in bipolar devices is observed. It is shown, that the accumulation of the defects during low dose rate irradiation depends on the irradiation time only, while true dose rate effects contribution to enhanced low dose rate sensitivity effect is related with processes during post-irradiation annealing. The conversion model of low dose rate effect was used for numerical description of the radiation responses of input bias currents of bipolar operational amplifiers in wide range of dose rates.

Effect of low-temperature irradiation on ELDRS in bipolar transistors

The possible physical mechanism of ELDRS effect in bipolar transistors for room and low-temperature irradiation is described. The ELDRS-free device at room temperature suffers on this effect at low-temperature irradiation.

Experimental Technique for Determination of ELDRS-Free Devices

The technique for experimental determination of ELRDS-free devices is described. The technique is based on the conversion model of low dose rate effect in bipolar transistors.

Total dose radiation response of n-channel enhancement mode field effect transistors over wide operation temperature range

Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.

The impact of annealing on the following radiation degradation rate of bipolar devices

The effect of post irradiation annealing on the following radiation degradation rate of bipolar integrated circuit parameters was estimated. The degradation rate increases significantly during the irradiation in comparison with the irradiation before the annealing.

ELDRS Susceptibility of Bipolar Transistors and Integrated Circuits During Low-Temperature Irradiation

The enhanced low dose rate sensitivity (ELDRS) susceptibility of 2N2222 bipolar transistors and LM111 voltage comparators was investigated during irradiation at low temperature and compared with corresponding room-temperature data. The possible physical mechanism of the ELDRS effect in bipolar transistors and integrated circuits during irradiation at room temperature and low temperature was described. A device that is ELDRS-free at room temperature suffers from this effect during irradiation at low temperature.

Multifunctional Equipment and Test Results for Total Ionizing Dose Testing of Analog Integrated Circuits

Multifunctional equipment for total ionizing dose testing of different functional types of analog integrated circuits and discrete transistors is developed and described. Corresponding test results for several types of analog devices are presented and discussed.

Numerical Estimation of the Radiation Hardness of Bipolar Integrated Circuits in Various Irradiation Conditions of Space Environment

The conversion model of low dose rate effect in bipolar devices was used for numerical simulation of total dose effects in bipolar devices for various radiation conditions of space environment. The numerical simulation was performed for cyclic temperature irradiation, which is typical for space applications, and for solar flare impact.

The Issue of Using Test Dose Rate 10 mrad(Si)/s for ELDRS Prediction in MIL-STD-883-H

The validity of MIL STD 883 H test method at dose rate less than 10 mrad(Si)/s is discussed. The prediction capability of conversion model is evaluated at ultra-low dose rates in comparison with standard MIL-STD-883-H.