Branson D. Belle

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there is also an effective way of creating a barrier to current flow so that the device can be switched off and not waste power. Graphene offers high carrier mobility, but the shape of its conduction and valence bands enables electron tunneling and makes it difficult to achieve low currents in an “off” state. Britnell et al. (p. 947, published online 2 February) have fabricated field-effect transistors in which a thin tunneling barrier created from a layered material—either hexagonal boron nitride or molybdenum disulfide—is sandwiched between graphene sheets. These devices exhibit on-off switching ratios of ≈50 and ≈10,000, respectively, at room temperature. Boron nitride or molybdenum disulfide layers sandwiched between graphene sheets act as tunneling barriers to minimize device leakage currents. An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.

Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

Atomic Layer Heterostructures—More Is More The isolation of stable layers of various materials, only an atom or several atoms thick, has provided the opportunity to fabricate devices with novel functionality and to probe fundamental physics. Britnell et al. (p. 1311, published online 2 May; see the Perspective by Hamm and Hess) sandwiched a single layer of the transition metal dichalcogenide WS2 between two sheets of graphene. The photocurrent response of the heterostructure device was enhanced, compared to that of the bare layer of WS2. The prospect of combining single or several-atom-thick layers into heterostructures should help to develop materials with a wide range of properties. Transition metal dichalcogenides sandwiched between two layers of graphene produce an enhanced photoresponse. [Also see Perspective by Hamm and Hess] The isolation of various two-dimensional (2D) materials, and the possibility to combine them in vertical stacks, has created a new paradigm in materials science: heterostructures based on 2D crystals. Such a concept has already proven fruitful for a number of electronic applications in the area of ultrathin and flexible devices. Here, we expand the range of such structures to photoactive ones by using semiconducting transition metal dichalcogenides (TMDCs)/graphene stacks. Van Hove singularities in the electronic density of states of TMDC guarantees enhanced light-matter interactions, leading to enhanced photon absorption and electron-hole creation (which are collected in transparent graphene electrodes). This allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).

Hunting for monolayer boron nitride: optical and Raman signatures.

We describe the identification of single- and few- layer boron nitride. Its optical contrast is much smaller than that of graphene but even monolayers are discernable by optimizing viewing conditions. Raman spectroscopy can be used to confirm BN monolayers. They exhibit an upshift in the fundamental Raman mode by up to 4 cm-1. The number of layers in thicker crystals can be counted by exploiting an integer-step increase in the Raman intensity and optical contrast.

Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.

Interaction phenomena in graphene seen through quantum capacitance

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron–electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.

Graphene-protected copper and silver plasmonics

Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, and increase sensitivity of bio-detection. A widespread use of plasmonic devices is notably hindered by high losses and the absence of stable and inexpensive metal films suitable for plasmonic applications. To this end, there has been a continuous search for alternative plasmonic materials that are also compatible with complementary metal oxide semiconductor technology. Here we show that copper and silver protected by graphene are viable candidates. Copper films covered with one to a few graphene layers show excellent plasmonic characteristics. They can be used to fabricate plasmonic devices and survive for at least a year, even in wet and corroding conditions. As a proof of concept, we use the graphene-protected copper to demonstrate dielectric loaded plasmonic waveguides and test sensitivity of surface plasmon resonances. Our results are likely to initiate wide use of graphene-protected plasmonics.

Doping mechanisms in graphene-MoS2 hybrids

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer molybdenum disulfide (MoS2). From first-principles simulations, we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.

Field-effect control of tunneling barrier height by exploiting graphene's low density of states

We exploit the low density of electronic states of graphene to modulate the tunnel current flowing perpendicular to the atomic layers of a multi-layer graphene-boron nitride device. This is achieved by using the electric field effect to raise the Fermi energy of the graphene emitter layer and thereby reduce the effective barrier height for tunneling electrons. We discuss how the electron charge density in the graphene layers and the properties of the boron nitride tunnel barrier determine the device characteristics under operating conditions and derive expressions for carrier tunneling in these highly anisotropic layered heterostructures.

Understanding Sources of Errors in Bit-Patterned Media to Improve Read Channel Performance

The limitations of current lithographic techniques result in a variation of the geometry of the fabricated islands in bit-patterned media. These variations give rise to jitter in the replay waveform that has a detrimental effect on the recovery of stored data. By analyzing experimental bit-patterned media, we show that the presence of lithography jitter can be quantified in terms of variations in the size and position of the islands, which can be seen to be Gaussian-like in nature. In addition, the amount of jitter increases as the periodicity and size of the islands reduces, confirming that lithography jitter will be a significant source of noise in any future storage system incorporating bit-patterned media. By using a comprehensive read channel model we demonstrate that a novel trellis structure offers improved read channel performance in the presence of island position variations.

Dependence of Switching Fields on Island Shape in Bit Patterned Media

Nanofabricated islands in bit patterned media (BPM) for magnetic data storage tend to vary in shape, size, and material properties which leads to variations in switching fields, causing write errors. In a working system, write errors will be rare, and therefore, an efficient analytic model is preferable to a micromagnetic model. An analytic model has been developed that calculates magnetometric (volume averaged) demagnetizing factors and predicts switching fields for different island shapes, particularly islands that can be described as truncated elliptic cones, since variants of this geometry can represent real islands. The model has been shown to agree well with micromagnetic simulations for various island shapes with fields at various angles to the perpendicular. Switching field calculations reveal that 4 : 1 aspect ratio islands may be more prone to adjacent track erasure compared to those with lower aspect ratios and that islands with slanted side walls were easier to reverse compared to cylindrical ones.