Bruno F. Kurz

New monolithic high-speed analog delay lines

Bucket-brigade circuit implementation with junction or metal-silicon field-effect switching elements provides good low- and high-frequency performance at low clocking voltages with high packing density, simple processing, and good stability.

Improved Schottky clamped (T/sup 2/L) circuits

Al-Si Schottky clamped transistors used as fast switching signal devices or in integrated circuits are superior to gold-doped transistors for such parameters as low-level current gain, leakage current I/SUB CO/, and propagation delay t/SUB pd/. A digital application is used to show how some of these parameters can be optimized for a T/SUP 2/L circuit, providing high switching speed (t/SUB pd/ 4 to 5 ns) and a 40-percent better worst-case low-level noise margin than the usual gold-doped T/SUP 2/L circuit.