Bryan Hemingway
University of Cincinnati
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Publication
Featured researches published by Bryan Hemingway.
Journal of the Royal Society Interface | 2012
Abdul Q. Sheikh; Toloo Taghian; Bryan Hemingway; Hongkwan Cho; Andrei Kogan; Daria A. Narmoneva
Low-amplitude electric field (EF) is an important component of wound-healing response and can promote vascular tissue repair; however, the mechanisms of action on endothelium remain unclear. We hypothesized that physiological amplitude EF regulates angiogenic response of microvascular endothelial cells via activation of the mitogen-activated protein kinase/extracellular signal-regulated kinase (MAPK/ERK) pathway. A custom set-up allowed non-thermal application of EF of high (7.5 GHz) and low (60 Hz) frequency. Cell responses following up to 24 h of EF exposure, including proliferation and apoptosis, capillary morphogenesis, vascular endothelial growth factor (VEGF) expression and MAPK pathways activation were quantified. A db/db mouse model of diabetic wound healing was used for in vivo validation. High-frequency EF enhanced capillary morphogenesis, VEGF release, MEK-cRaf complex formation, MEK and ERK phosphorylation, whereas no MAPK/JNK and MAPK/p38 pathways activation was observed. The endothelial response to EF did not require VEGF binding to VEGFR2 receptor. EF-induced MEK phosphorylation was reversed in the presence of MEK and Ca2+ inhibitors, reduced by endothelial nitric oxide synthase inhibition, and did not depend on PI3K pathway activation. The results provide evidence for a novel intracellular mechanism for EF regulation of endothelial angiogenic response via frequency-sensitive MAPK/ERK pathway activation, with important implications for EF-based therapies for vascular tissue regeneration.
Physical Review B | 2014
Bryan Hemingway; Stephen Herbert; M. R. Melloch; Andrei Kogan
We present a study of spin 1/2 Kondo singlets in single electron transistors under a microwave frequency bias excitation. We compare time-averaged conductance
Physical Review Letters | 2009
Tai-Min Liu; Bryan Hemingway; Andrei Kogan; Steven Herbert; M. R. Melloch
G
Physical Review B | 2012
Tai-Min Liu; Anh T. Ngo; Bryan Hemingway; Steven Herbert; M. R. Melloch; Sergio E. Ulloa; Andrei Kogan
to predicted universal response with respect to microwave frequency, oscillation amplitude and the Kondo temperature and find a non-adiabatic response when the microwave photon energy
Bulletin of the American Physical Society | 2011
Tai-Min Liu; Bryan Hemingway; Andrei Kogan; Steven Herbert; M. R. Melloch
hf
Bulletin of the American Physical Society | 2014
Bryan Hemingway; Ian Appelbaum
is comparable to the Kondo temperature
arXiv: Strongly Correlated Electrons | 2013
Bryan Hemingway; Stephen Herbert; M. R. Melloch; Andrei Kogan
k_B T_K
Bulletin of the American Physical Society | 2013
Bryan Hemingway; Andrei Kogan; Stephen Herbert; M. R. Melloch
. We show that our measurements are qualitatively consistent with the predictions for the radiation-induced decoherence rate of the Kondo spin.
Archive | 2012
Bryan Hemingway
We have measured the magnetic splitting Delta K of a Kondo peak in the differential conductance of a single-electron transistor while tuning the Kondo temperature T K along two different paths in parameter space: varying the dot-lead coupling at a constant dot energy and vice versa. At a high magnetic field B, the changes of DeltaK with TK along the two paths have opposite signs, indicating that Delta K is not a universal function of TK. At low B, we observe a decrease in DeltaK with TK along both paths, in agreement with theoretical predictions. Furthermore, we find Delta K/Delta<1 at low B and Delta K/Delta>1 at high B, where Delta is the Zeeman energy of the bare spin, in the same system.
Bulletin of the American Physical Society | 2012
Bryan Hemingway; Tai-Min Liu; Andrei Kogan; Steven Herbert; M. R. Melloch
We report detailed transport measurements in a quantum dot in a spin-flip co-tunneling regime, and a quantitative comparison of the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs heterostructure, and the conductance is measured in the presence of an in-plane Zeeman field. We focus on the ratio of the nonlinear conductance values at bias voltages exceeding the Zeeman threshold, a regime that permits a spin flip on the dot, to those below the Zeeman threshold, when the spin flip on the dot is energetically forbidden. The data obtained in three different odd-occupation dot states show good quantitative agreement with the theory with no adjustable parameters. We also compare the theoretical results to the predictions of a phenomenological form used previously for the analysis of non-linear co-tunneling conductance, specifically the determination of the heterostructure g-factor, and find good agreement between the two.