Steven Herbert

Observation of a 0.5 conductance plateau in asymmetrically biased GaAs quantum point contact

We report the observation of a robust anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is interpreted as evidence of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T = 4.2 K as a function of the potential asymmetry between the side gates. Because GaAs is a material with established processing techniques, high mobility, and a relatively high spin coherence length, the observation of spontaneous spin polarization in a side-gated GaAs QPC could eventually lead to the realization of an all-electric spin-valve at tens of degrees Kelvin.

Finite-size effects and dynamical scaling in two-dimensional Josephson junction arrays

In recent years many groups have used Fisher, Fisher, and Huse (FFH) dynamical scaling to investigate and demonstrate details of the superconducting phase transition. Some attention has been focused on two dimensions where the phase transition is of the Kosterlitz-Thouless-Berezinskii (KTB) type. Pierson et al. used FFH dynamical scaling almost exclusively to suggest that the dynamics of the two-dimensional superconducting phase transition may be other than KTB-like. In this work we investigate the ability of scaling behavior by itself to yield useful information on the nature of the transition. We simulate current-voltage (IV) curves for two-dimensional Josephson junction arrays with and without finite-size-induced resistive tails. We find that, for the finite-size effect data, the values of the scaling parameters, specifically the transition temperature and the dynamical scaling exponent z, depend critically on the magnitude of the contribution that the resistive tails make to the IV curves. In effect, the values of the scaling parameters depend on the noise floor of the measuring system.

Influence of surface scattering on the anomalous conductance plateaus in an asymmetrically biased InAs/In0.52Al0.48As quantum point contact

We study of the appearance and evolution of several anomalous (i.e., G < G(0) D 2e(2)/h) conductance plateaus in an In(0.52)Al(0.48)As/InAs quantum point contact (QPC). This work was performed at T = 4:2 K as a function of the offset bias ΔV(G) between the two in-plane gates of the QPC. The number and location of the anomalous conductance plateaus strongly depend on the polarity of the offset bias. The anomalous plateaus appear only over an intermediate range of offset bias of several volts. They are quite robust, being observed over a maximum range of nearly 1 V for the common sweep voltage applied to the two gates. These results are interpreted as evidence for the sensitivity of the QPC spin polarization to defects (surface roughness and impurity (dangling bond) scattering) generated during the etching process that forms the QPC side walls. This assertion is supported by non-equilibrium Green function simulations of the conductance of a single QPC in the presence of dangling bonds on its walls. Our simulations show that a spin conductance polarization as high as 98% can be achieved despite the presence of dangling bonds. The maximum in is not necessarily reached where the conductance of the channel is equal to 0:5G(0).

Understanding the anomalous conductance plateau in asymmetrically biased InAs/In0.52Al0.48As quantum point contacts—A step towards a tunable all electric spin valve

The appearance and evolution of an anomalous conductance plateau at 0.4(2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T = 4.2 K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an intermediate range (around 3 V) of bias asymmetry. It is quite robust, being observed over a maximum range of nearly 1 V of the sweep voltage common to the two in-plane gates. The conductance measurements show evidence of surface roughness and dangling bond scattering from the side walls of the QPC.

Magnetic-field-induced crossover to a nonuniversal regime in a Kondo dot.

We have measured the magnetic splitting Delta K of a Kondo peak in the differential conductance of a single-electron transistor while tuning the Kondo temperature T K along two different paths in parameter space: varying the dot-lead coupling at a constant dot energy and vice versa. At a high magnetic field B, the changes of DeltaK with TK along the two paths have opposite signs, indicating that Delta K is not a universal function of TK. At low B, we observe a decrease in DeltaK with TK along both paths, in agreement with theoretical predictions. Furthermore, we find Delta K/Delta<1 at low B and Delta K/Delta>1 at high B, where Delta is the Zeeman energy of the bare spin, in the same system.

Quantitative study of spin-flip cotunneling transport in a quantum dot

We report detailed transport measurements in a quantum dot in a spin-flip co-tunneling regime, and a quantitative comparison of the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs heterostructure, and the conductance is measured in the presence of an in-plane Zeeman field. We focus on the ratio of the nonlinear conductance values at bias voltages exceeding the Zeeman threshold, a regime that permits a spin flip on the dot, to those below the Zeeman threshold, when the spin flip on the dot is energetically forbidden. The data obtained in three different odd-occupation dot states show good quantitative agreement with the theory with no adjustable parameters. We also compare the theoretical results to the predictions of a phenomenological form used previously for the analysis of non-linear co-tunneling conductance, specifically the determination of the heterostructure g-factor, and find good agreement between the two.

Magnetic Splitting of the Zero Bias Peak in a Quantum Point Contact with a Variable Aspect Ratio

We report a zero-bias peak in the differential conductance of a Quantum Point Contact (QPC), which splits in an external magnetic field. The peak is observed over a range of device conductance values starting significantly below

Effect of finite size on the Kosterlitz-Thouless transition in two-dimensional arrays of proximity-coupled junctions

2e^2/h

Electrical properties of undoped GaxIn1-xP/GaAs quantum wells.

. The observed splitting closely matches the Zeeman energy and shows very little dependence on gate voltage, suggesting that the mechanism responsible for the formation of the peak involves electron spin. Precision Zeeman energy data for the experiment are obtained from a separately patterned single-electron transistor located a short distance away from the QPC. The QPC device has four gates arranged in a way that permits tuning of the longitudinal potential, and is fabricated in a GaAs/AlGaAs heterostructure containing 2-dimenional electron gas. We show that the agreement between the peak splitting and the Zeeman energy is robust with respect to moderate distortions of the QPC potential. We also show that the mechanism that leads to the formation of the ZBP is different from the conventional Kondo effect found in quantum dots.