Bumned Soodchomshom

Lattice-pseudospin and spin-valley polarizations in dual ferromagnetic-gated silicene junction

Abstract We study spin-valley and lattice-pseudospin currents in a dual ferromagnetic-gated silicene-based junction. Silicene has buckled atomic structure which allows us to take sublattice-dependent ferromagnetism into account in the investigation. One of the study results show that transmission at the junctions exhibits anisotropic property only in anti-parallel cases. Interestingly, the studied junctions can be switched from a pure spin-polarizer to a pure valley-polarizer by reversing directions of exchange fields in the parallel junctions. The perfect control of spin-valley currents can be done only in the parallel cases and its resolution can be enhanced by increasing gate potential between the ferromagnetic barriers. The asymmetric barriers of anti-parallel junction is found to destroy both spin and valley filtering effects and yield a novel result, pure sub-lattice pseudospin polarization. The current in the anti-parallel junctions can be controlled to flow solely in either A or B sub-lattice, saying that the controllable lattice current in silicene is created in double ferromagnetic-gated junction. Our work reveals the potential of dual ferromagnetic-gated silicene junction which may be possible for applications in spin-valleytronics and lattice-pseudospintronics.

Strain control of real-and lattice-spin currents in a silicene junction

Abstract We investigate real- and lattice-spin currents controlled by strain in a silicene-based junction, where chemical potential, perpendicular electric field and circularly polarized light are applied into the strained barrier. We find that the junction yields strain filtering effect with perfect strain control of real- (or lattice-)spin currents. (i) By applying electric field without circularly polarized light we show that total current is carried by pure lattice-spin up (or down) electrons tunable by strain. (ii) When circularly polarized light is irradiated onto silicene sheet without applying electric field, total current is carried by pure real-spin up (or down) electrons tunable by strain. High conductance peaks associated with pure real- (or lattice-)spin currents in case ii (or i) occur at specific magnitude of strain, yielding strain filtering effect. Magnitudes of filtered strain due to pure real- (or lattice-) spin currents may be tunable by varying chemical potential. Sensitivity may be enhanced by increasing thickness of strained barrier. Significantly, (iii) when both perpendicular electric field and circularly polarized light are applied, the total current is carried by three species of electron groups tunable by strain. This may lead to controllable numbers of electron species to transport. This result shows that strain filtering effect in a silicene-based junction is quite different from that in graphene junction. Our work reveals potential of silicene as a nano-electro-mechanical device and spin-valleytronic applications.

Gate control of lattice-pseudospin currents in graphene on SW2: Effect of sublattice symmetry breaking and spin–orbit interaction

Strong spin–orbit interaction (SOI) in graphene grown on tungsten disulfide (SW2) has been recently observed, leading to energy gap opening by SOI. Energy gap in graphene may also be induced by sublattice symmetry breaking (SSB) where energy level in A-sublattice is not equal to that in B-sublattice. SSB-gap may be produced by growing graphene on hexagonal boron nitride or silicon carbide. In this work, we investigate transport property in a SOI/SSB/SOI gapped graphene junction, focusing the effect of interplay of SOI and SSB. We find that, lattice-pseudospin polarization (L-PSP) can be controlled perfectly from +100% to −100% by gate voltage. This is due to the fact that in graphene grown on SW2, the carriers carry lattice-pseudospin degree of freedom “up and down”. The SSB-gapped graphene exhibits pseudo-ferromagnetism to play the role of lattice-pseudospin filtering barrier. It is also found that the SOI and SSB-gaps in graphene may be measured by characteristic of L-PSP in the junction. The proposed controllable-lattice-pseudospin currents may be applicable for graphene-based pseudospintronics.

Josephson Effect in Graphene: Comparison of Real and Pseudo Vector Potential Barriers

The Josephson currents through real vector potential (RVP) and pseudo vector potential (PVP) barriers in graphene are investigated. In graphene, the pseudo vector potential may be caused by a local strain. The comparison of supercurrents induced by the two type-barriers is focused. As a result, we find that not only will the RVP induce a transition Josephson current from the 0 → π state but also causes the difference in the phases of the order parameters of the two superconducting graphene layers to shift from → . The critical current is PVP-independent around the neutrality point while it strongly depends on the RVP. The vector potential dependence of critical current is found to be perfectly linear for both PVP and RVP barriers.

Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

Abstract Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TBs are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berrys curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

Perfect spin filtering controlled by an electric field in a bilayer graphene junction：Effect of layer-dependent exchange energy

Magneto transport of carriers with a spin-dependent gap in a ferromagnetic-gated bilayer of graphene is investigated. We focus on the effect of an energy gap induced by the mismatch of the exchange fields in the top and bottom layers of an AB-stacked graphene bilayer. The interplay of the electric and exchange fields causes the electron to acquire a spin-dependent energy gap. We find that, only in the case of the anti-parallel configuration, the effect of a magnetic-induced gap will give rise to perfect spin filtering controlled by the electric field. The resolution of the spin filter may be enhanced by varying the bias voltage. Perfect switching of the spin polarization from + 100% to −100% by reversing the direction of electric field is predicted. Giant magnetoresistance is predicted to be easily realized when the applied electric field is smaller than the magnetic energy gap. It should be pointed out that the perfect spin filter is due to the layer-dependent exchange energy. This work points to the potential application of bilayer graphene in spintronics.

Pseudo Spin Torque Induced by Strain Field of Dirac Fermions in Graphene

The physical property of pseudo spin of electrons in graphene is investigated. In contrast to a recent description [Phys. Rev. Lett. 106 (2011) 116803], we show that pseudo spin in graphene is not completely a real angular momentum. The pseudo spin only in the direction perpendicular to the graphene sheet is real angular momentum while the pseudo spin parallel to the graphene plane is still not real angular momentum. Interestingly, it is also shown that the Newtonian-like force and pseudo spin torque of massive Dirac electrons in graphene under strain field mimic gravitomagnetic force and gravitomagnetic spin torque, respectively. This is due to the equivalence of pseudo spin and velocity operators of (2+1)-dimensional massive electrons in graphene, different from that in real (3+1)-dimensional Dirac fields. This work reveals the new physical property of graphene as a pseudo gravitomagnetic material.In contrast to recent description [Phys. Rev. Lett. 106 (2011)116803], we show that pseudo spin in graphene is not completely a real angular momentum. The pseudo spin only in the direction perpendicular to graphene sheet is real angular momentum, while the pseudo spin parallel to graphene plane is still not real angular momentum. Interestingly, it is also shown that the Newtonian-like force and pseudo spin torque of massive Dirac electrons in graphene under strain field mimic gravitomagnetic force and gravitomagnetic spin torque, respectively. This is due to the equivalence of pseudo spin and velocity operators of 2+1 dimensional massive electrons in graphene, different from that in real 3+1 dimensional Dirac fields. This work reveals new physical property of graphene as a pseudo gravitomagnetic material.