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Featured researches published by Burton Joseph Masters.


Archive | 1976

MINIMIZATION OF MISFIT DISLOCATIONS IN SILICON BY DOUBLE IMPLANTATION OF ARSENIC AND GERMANIUM

S. Mader; Burton Joseph Masters; H. Bernhard Pogge


Archive | 1973

Ion bombardment method of producing integrated semiconductor circuit resistors of low temperature coefficient of resistance

San-Mei Ku; Burton Joseph Masters


Archive | 1978

Silicon integrated circuit region containing implanted arsenic and germanium

S. Mader; Burton Joseph Masters; H. Bernhard Pogge


Archive | 1969

METHOD OF REDUCING CARRIER LIFETIME IN SEMICONDUCTOR STRUCTURES

Madhukar Laxman Joshi; Burton Joseph Masters; Osvaldo R Viva; Tsu-Hsing Yeh


Archive | 1975

Method of ion implantation through an electrically insulative material

Wilfried Gustaf Koenig; James Steve Makris; Burton Joseph Masters


Archive | 1977

Verfahren zur herstellung von silicium-halbleiteranordnungen unter einsatz einer ionenimplantation und zugehoerige halbleiteranordnung

S. Mader; Burton Joseph Masters; Hans Bernhard Pogge


Archive | 1977

Forming silicon integrated circuit region by the implantation of arsenic and germanium

Burton Joseph Masters; S. Mader; Hans Bernhard Pogge


Archive | 1975

Verfahren zur ionenimplantation durch eine elektrisch isolierende schicht A method for ion implantation by an electrically insulating layer

Wilfried Gustaf Koenig; James Steve Makris; Burton Joseph Masters


Archive | 1975

Verfahren zur ionenimplantation durch eine elektrisch isolierende schicht

Wilfried Gustaf Koenig; James Steve Makris; Burton Joseph Masters


Archive | 1975

A method for ion implantation by an electrically insulating layer

Wilfried Gustaf Koenig; James Steve Makris; Burton Joseph Masters

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