C. B. Sorensen

Magnetoresistance of a two-dimensional electron gas in a random magnetic field

We report magnetoresistance measurements on a two-dimensional electron gas made from a high-mobility GaAs/

POSITIVE MAGNETORESISTANCE AND HOLE-HOLE SCATTERING IN GAAS/AL0.5GA0.5AS HETEROSTRUCTURES UNDER UNIAXIAL COMPRESSION

{\mathrm{Al}}_{\mathit{x}}

Positive persistent photoconductivity in p-type Al0,5Ga0,5As/GaAs/Al0,5Ga0,5As

{\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}

Negative and persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures under uniaxial stress

As heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation.

Temperature dependence of the “0.7” 2e2/h quasi-plateau in strongly confined quantum point contacts

Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al

Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents

_{0.5}

Sieve Eop Pump

Ga

Sieve electroosmotic pump

_{0.5}

Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth

As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time