C. Boyle

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

Five, 8.36 μm-emitting quantum-cascade lasers (QCLs) have been monolithically phase-locked in the in-phase array mode via resonant leaky-wave coupling. The structure is fabricated by etch and regrowth which provides large index steps (Δn = 0.10) between antiguided-array elements and interelement regions. Such high index contrast photonic-crystal (PC) lasers have more than an order of magnitude higher index contrast than PC-distributed feedback lasers previously used for coherent beam combining in QCLs. Absorption loss to metal layers inserted in the interelement regions provides a wide (∼1.0 μm) range in interelement width over which the resonant in-phase mode is strongly favored to lase. Room-temperature, in-phase-mode operation with ∼2.2 kA/cm2 threshold-current density is obtained from 105 μm-wide aperture devices. The far-field beam pattern has lobewidths 1.65× diffraction limit (D.L.) and 82% of the light in the main lobe, up to 1.8× threshold. Peak pulsed near-D.L. power of 5.5 W is obtained, with 4...

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

Grating-coupled surface-emitting (GCSE) lasers generally operate with a double-lobed far-field beam pattern along the cavity-length direction, which is a result of lasing being favored in the antisymmetric grating mode. We experimentally demonstrate a GCSE quantum-cascade laser design allowing high-power, nearly single-lobed surface emission parallel to the longitudinal cavity. A 2nd-order Au-semiconductor distributed-feedback (DFB)/distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric (longitudinal) grating mode by causing resonant coupling of the guided optical mode to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. Then, the antisymmetric modes are strongly absorbed by the metal in the grating, causing the symmetric mode to be favored to lase, which, in turn, produces a single-lobed beam over a range of grating duty-cycle values of 36%–41%. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of reflections from the devices cleaved ends. Peak pulsed output powers of ∼0.4 W were measured with nearly single-lobe beam-pattern (in the longitudinal direction), single-spatial-mode operation near 4.75 μm wavelength. Far-field measurements confirm a diffraction-limited beam pattern, in agreement with simulations, for a source-to-detector separation of 2 m.

Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers

By stepwise tapering, both the barrier heights and quantum-well depths in the active regions of 8.7–8.8 μm-emitting quantum-cascade-laser (QCL) structures, virtually complete carrier-leakage suppression is achieved. Such step-taper active-region-type QCLs possess, for 3 mm-long devices with high-reflectivity-coated back facets, threshold-current characteristic temperature coefficients, T0, as high as 283 K and slope-efficiency characteristic temperature coefficients, T1, as high as 561 K, over the 20–60 °C heatsink-temperature range. These high T0 and T1 values reflect at least a factor of four reduction in carrier-leakage current compared to conventional 8–9 μm-emitting QCLs. Room temperature, pulsed, threshold-current densities are 1.58 kA/cm2; values comparable to those for 35-period conventional QCLs of similar injector-region doping level. Superlinear behavior of the light-current curves is shown to be the result of the onset of resonant extraction from the lower laser level at a drive level of ∼1.3×...

86% internal differential efficiency from 8 to 9 µm-emitting, step-taper active-region quantum cascade lasers

8.4 μm-emitting quantum cascade lasers (QCLs) have been designed to have, right from threshold, both carrier-leakage suppression and miniband-like carrier extraction. The slope-efficiency characteristic temperature T1, the signature of carrier-leakage suppression, is found to be 665 K. Resonant-tunneling carrier extraction from both the lower laser level (ll) and the level below it, coupled with highly effective ll-depopulation provide a very short ll lifetime (~0.12 ps). As a result the laser-transition differential efficiency reaches 89%, and the internal differential efficiency ηid, derived from a variable mirror-loss study, is found to be 86%, in good agreement with theory. A study of 8.8 μm-emitting QCLs also provides an ηid value of 86%. A corrected equation for the external differential efficiency is derived which leads to a fundamental limit of ~90% for the ηid values of mid-infrared QCLs. In turn, the fundamental wallplug-efficiency limits become ~34% higher than previously predicted.

4.7 μm-Emitting Near-Resonant Leaky-Wave-Coupled Quantum Cascade Laser Phase-Locked Arrays

Five-element phase-locked arrays of 4.7 μm-emitting quantum cascade lasers are demonstrated which operate either in a near-diffraction-limited (D.L.) beam to 3.6 W peak pulsed power or in a narrow beam (< 3.5 × D.L.) up to 6.1 W peak pulsed power. Devices are fabricated by a two-step MOCVD process and operate predominantly in an in-phase array mode, in agreement with design-simulation studies. Analysis based on the actual device dimensions indicate that near-resonant leaky-wave coupling occurs. Scaling to a larger number of array elements and optimization for resonant operation is expected to lead to further increases in output power while maintaining high beam quality.

High internal differential efficiency mid-infrared quantum cascade lasers

Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T0 and T1 values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential efficiency ηid, which is the product of the injection efficiency and the differential laser-transition efficiency, reaches values as high as 86 % for both 8.4 μm- and 8.8 μm-emitting QCLs. Such ηid values are 30-50% higher than those obtained from conventional QCLs emitting in the 7-11 μm wavelength range. Achieving both carrier-leakage suppression and miniband-like carrier extraction in mid-infrared (IR) QCLs leads to ηid values close to the fundamental limit of ~ 90 %. In turn, the currently employed fundamental wallplug-efficiency limits over the mid-IR wavelength range have to be increased by ~ 34 % (e.g., the wallplug-efficiency limit at λ= 4.6 μm increases from 29 % to 39 %). Preliminary results from STA-type 4.8-5.0 μm-emitting QCLs include 1.5 W CW operation, and 77 % internal differential efficiency; that is, 30-50% higher than the ηid values obtained from conventional 4.0-6.5μm-emitting QCLs.

Spectrally resolved modal characteristics of leaky-wave-coupled quantum cascade phase-locked laser arrays

Abstract. The modal characteristics of nonresonant five-element phase-locked arrays of 4.7-μm emitting quantum cascade lasers (QCLs) have been studied using spectrally resolved near- and far-field measurements and correlated with results of device simulation. Devices are fabricated by a two-step metal-organic chemical vapor deposition process and operate predominantly in an in-phase array mode near threshold, although become multimode at higher drive levels. The wide spectral bandwidth of the QCL’s core region is found to be a factor in promoting multispatial-mode operation at high drive levels above threshold. An optimized resonant-array design is identified to allow sole in-phase array-mode operation to high drive levels above threshold, and indicates that for phase-locked laser arrays full spatial coherence to high output powers does not require full temporal coherence.

Destructive physical analysis of degraded quantum cascade lasers

Remarkable progress made in quantum cascade lasers (QCLs) has led them to find an increasing number of applications in remote sensing, chemical sensing, and free space communications, in addition to potential space applications. However, little has been reported on reliability and failure modes of QCLs although it is crucial to understand failure modes and underlying degradation mechanisms in developing QCLs that meet lifetime requirements for space missions. Focused ion beam (FIB) techniques have been employed to investigate failure modes in various types of laser diodes. Our group has also used FIB to study failure modes in single-mode and multi-mode InGaAs-AlGaAs strained QW lasers, but few groups have used this technique to investigate failure modes in QCLs. In our study, we report on destructive physical analysis (DPA) of degraded InGaAs-InAlAs QCLs using FIB and high-resolution TEM techniques. The active region of QCLs that we studied consisted of two-23 stage layers of InGaAs-InAlAs separated by a 0.5 μm thick InP spacer layer for 8.4μm QCLs and 30-stage layers of lattice-matched InGaAs-InAlAs heterostructure for 4.7μm QCLs. The MOVPE-grown laser structures were fabricated into deep-etched ridge waveguide QCLs. L-I-V-spectral characteristics were measured at RT under pulsed operation. Our 8.4μm QCLs with as-cleaved and HR-coated facets showed a laser threshold of 1.7 A and a threshold voltage of 13 V at RT, whereas our 4.7μm QCLs without facet coating showed threshold currents of 320 - 400 mA and threshold voltages of 13 - 13.5V. Failures were generated via short-term tests of QCLs. FIB systems were used to study the damage area on the front facet and also to prepare TEM cross sections at different locations along the waveguide for defect and chemical analyses using a HR-TEM. In contrast to the COMD damaged area showing as a blister on the front facet of QW lasers, the damaged area of QCLs was significantly extended into the InP substrate due to a much less absorption of lasing photons in QCLs. Our detailed destructive physical analysis results are reported including defect, structural, and chemical analysis results from degraded QCLs.

Planarized process for resonant leaky-wave coupled phase-locked arrays of mid-IR quantum cascade lasers

On-chip resonant leaky-wave coupling of quantum cascade lasers (QCLs) emitting at 8.36 μm has been realized by selective regrowth of interelement layers in curved trenches, defined by dry and wet etching. The fabricated structure provides large index steps (Δn = 0.10) between antiguided-array element and interelement regions. In-phase-mode operation to 5.5 W front-facet emitted power in a near-diffraction-limited far-field beam pattern, with 4.5 W in the main lobe, is demonstrated. A refined fabrication process has been developed to produce phased-locked antiguided arrays of QCLs with planar geometry. The main fabrication steps in this process include non-selective regrowth of Fe:InP in interelement trenches, defined by inductive-coupled plasma (ICP) etching, a chemical polishing (CP) step to planarize the surface, non-selective regrowth of interelement layers, ICP selective etching of interelement layers, and non-selective regrowth of InP cladding layer followed by another CP step to form the element regions. This new process results in planar InGaAs/InP interelement regions, which allows for significantly improved control over the array geometry and the dimensions of element and interelement regions. Such a planar process is highly desirable to realize shorter emitting wavelength (4.6 μm) arrays, where fabrication tolerance for single-mode operation are tighter compared to 8 μm-emitting devices.

Resonant Leaky-Wave Coupled Phase-Locked Arrays of Mid-Infrared Quantum Cascade Lasers

This paper presents the resonant leaky-wave coupling of quantum cascade lasers, which, in turn, has provided in-phase-mode operation to 3.0 W front-facet emitted power in a near-diffraction-limited far-field beam pattern, with 2.5 W in the main lobe.