Chris Sigler

Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes

Resonant coupling of the transverse-magnetic polarized (guided) optical mode of a quantum-cascade laser (QCL) to the antisymmetric surface-plasmon modes of 2nd-order distributed-feedback (DFB) metal/semiconductor gratings results in strong antisymmetric-mode absorption. In turn, lasing in the symmetric mode, that is, surface emission in a single-lobe far-field beam pattern, is strongly favored over controllable ranges in grating duty cycle and tooth height. By using core-region characteristics of a published 4.6 μm-emitting QCL, grating-coupled surface-emitting (SE) QCLs are analyzed and optimized for highly efficient single-lobe operation. For infinite-length devices, it is found that when the antisymmetric mode is resonantly absorbed, the symmetric mode has negligible absorption loss (∼0.1 cm−1) while still being efficiently outcoupled, through the substrate, by the DFB grating. For finite-length devices, 2nd-order distributed Bragg reflector (DBR) gratings are used on both sides of the DFB grating to p...

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

Grating-coupled surface-emitting (GCSE) lasers generally operate with a double-lobed far-field beam pattern along the cavity-length direction, which is a result of lasing being favored in the antisymmetric grating mode. We experimentally demonstrate a GCSE quantum-cascade laser design allowing high-power, nearly single-lobed surface emission parallel to the longitudinal cavity. A 2nd-order Au-semiconductor distributed-feedback (DFB)/distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric (longitudinal) grating mode by causing resonant coupling of the guided optical mode to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. Then, the antisymmetric modes are strongly absorbed by the metal in the grating, causing the symmetric mode to be favored to lase, which, in turn, produces a single-lobed beam over a range of grating duty-cycle values of 36%–41%. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of reflections from the devices cleaved ends. Peak pulsed output powers of ∼0.4 W were measured with nearly single-lobe beam-pattern (in the longitudinal direction), single-spatial-mode operation near 4.75 μm wavelength. Far-field measurements confirm a diffraction-limited beam pattern, in agreement with simulations, for a source-to-detector separation of 2 m.

4.7 μm-Emitting Near-Resonant Leaky-Wave-Coupled Quantum Cascade Laser Phase-Locked Arrays

Five-element phase-locked arrays of 4.7 μm-emitting quantum cascade lasers are demonstrated which operate either in a near-diffraction-limited (D.L.) beam to 3.6 W peak pulsed power or in a narrow beam (< 3.5 × D.L.) up to 6.1 W peak pulsed power. Devices are fabricated by a two-step MOCVD process and operate predominantly in an in-phase array mode, in agreement with design-simulation studies. Analysis based on the actual device dimensions indicate that near-resonant leaky-wave coupling occurs. Scaling to a larger number of array elements and optimization for resonant operation is expected to lead to further increases in output power while maintaining high beam quality.

High internal differential efficiency mid-infrared quantum cascade lasers

Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T0 and T1 values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential efficiency ηid, which is the product of the injection efficiency and the differential laser-transition efficiency, reaches values as high as 86 % for both 8.4 μm- and 8.8 μm-emitting QCLs. Such ηid values are 30-50% higher than those obtained from conventional QCLs emitting in the 7-11 μm wavelength range. Achieving both carrier-leakage suppression and miniband-like carrier extraction in mid-infrared (IR) QCLs leads to ηid values close to the fundamental limit of ~ 90 %. In turn, the currently employed fundamental wallplug-efficiency limits over the mid-IR wavelength range have to be increased by ~ 34 % (e.g., the wallplug-efficiency limit at λ= 4.6 μm increases from 29 % to 39 %). Preliminary results from STA-type 4.8-5.0 μm-emitting QCLs include 1.5 W CW operation, and 77 % internal differential efficiency; that is, 30-50% higher than the ηid values obtained from conventional 4.0-6.5μm-emitting QCLs.

Design of Resonant Leaky-Wave Coupled Phase-Locked Arrays of Mid-IR Quantum Cascade Lasers

A theoretical analysis of the optical and thermal characteristics of planarized phase-locked quantum cascade laser (QCL) arrays emitting at 4.8 μm was performed. Large aperture seven-element designs are established with a reasonably large process window for achieving single in-phase-mode operation. Full-wave optical simulations of these high-index contrast photonic crystal devices were coupled with 2-D heat flow analysis to investigate the influence of thermal lensing on modal behavior. Self-focusing under thermally induced index variations across the array are expected to ultimately limit the single-mode operational range. Anti-resonant reflective-optical waveguide terminations for three-element arrays can decrease the in-phase mode threshold-current density, improve discrimination against array modes composed of coupled first-order element modes, and improve the in-phase-mode near-field uniformity under CW operation.

Spectrally resolved modal characteristics of leaky-wave-coupled quantum cascade phase-locked laser arrays

Abstract. The modal characteristics of nonresonant five-element phase-locked arrays of 4.7-μm emitting quantum cascade lasers (QCLs) have been studied using spectrally resolved near- and far-field measurements and correlated with results of device simulation. Devices are fabricated by a two-step metal-organic chemical vapor deposition process and operate predominantly in an in-phase array mode near threshold, although become multimode at higher drive levels. The wide spectral bandwidth of the QCL’s core region is found to be a factor in promoting multispatial-mode operation at high drive levels above threshold. An optimized resonant-array design is identified to allow sole in-phase array-mode operation to high drive levels above threshold, and indicates that for phase-locked laser arrays full spatial coherence to high output powers does not require full temporal coherence.

Design considerations for λ ∼ 3.0- to 3.5-μm-emitting quantum cascade lasers on metamorphic buffer layers

Abstract. Quantum cascade lasers (QCLs) that employ metamorphic buffer layers as substrates of variable lattice constant have been designed for emission in the 3.0- to 3.5-μm wavelength range. Theoretical analysis of the active-region (AR) energy band structure, while using an 8-band k•p model, reveals that one can achieve both effective carrier-leakage suppression as well as fast carrier extraction in QCL structures of relatively low strain. Significantly lower indium-content quantum wells (QWs) can be employed for the AR compared to QWs employed for conventional short-wavelength QCL structures grown on InP, which, in turn, is expected to eliminate carrier leakage to indirect-gap valleys (X, L). An analysis of thermo-optical characteristics for the complete device design indicates that high-Al-content AlInAs cladding layers are more effective for both optical confinement and thermal dissipation than InGaP cladding layers. An electroluminescence-spectrum full-width half-maximum linewidth of 54.6 meV is estimated from interface roughness scattering and, by considering both inelastic and elastic scattering, the threshold-current density for 3.39-μm-emitting, 3-mm-long back-facet-coated QCLs is projected to be 1.40  kA/cm2.

Planarized process for resonant leaky-wave coupled phase-locked arrays of mid-IR quantum cascade lasers

On-chip resonant leaky-wave coupling of quantum cascade lasers (QCLs) emitting at 8.36 μm has been realized by selective regrowth of interelement layers in curved trenches, defined by dry and wet etching. The fabricated structure provides large index steps (Δn = 0.10) between antiguided-array element and interelement regions. In-phase-mode operation to 5.5 W front-facet emitted power in a near-diffraction-limited far-field beam pattern, with 4.5 W in the main lobe, is demonstrated. A refined fabrication process has been developed to produce phased-locked antiguided arrays of QCLs with planar geometry. The main fabrication steps in this process include non-selective regrowth of Fe:InP in interelement trenches, defined by inductive-coupled plasma (ICP) etching, a chemical polishing (CP) step to planarize the surface, non-selective regrowth of interelement layers, ICP selective etching of interelement layers, and non-selective regrowth of InP cladding layer followed by another CP step to form the element regions. This new process results in planar InGaAs/InP interelement regions, which allows for significantly improved control over the array geometry and the dimensions of element and interelement regions. Such a planar process is highly desirable to realize shorter emitting wavelength (4.6 μm) arrays, where fabrication tolerance for single-mode operation are tighter compared to 8 μm-emitting devices.

Resonant Leaky-Wave Coupled Phase-Locked Arrays of Mid-Infrared Quantum Cascade Lasers

This paper presents the resonant leaky-wave coupling of quantum cascade lasers, which, in turn, has provided in-phase-mode operation to 3.0 W front-facet emitted power in a near-diffraction-limited far-field beam pattern, with 2.5 W in the main lobe.

Narrow-Beam, 4.7 micron-Emitting Near-Resonant Leaky-Wave-Coupled Quantum Cascade Laser Phase-Locked Array

Narrow beam (3.2 × D.L. FWHM) is demonstrated up to 5.85 W pulsed output power from a five-element phase-locked array of 4.7 μm-emitting quantum cascade lasers. Devices are fabricated by a two-step MOCVD process and operate predominately in an in-phase array mode, in agreement with design simulation studies.