C. David Wright

An optoelectronic framework enabled by low-dimensional phase-change films.

The development of materials whose refractive index can be optically transformed as desired, such as chalcogenide-based phase-change materials, has revolutionized the media and data storage industries by providing inexpensive, high-speed, portable and reliable platforms able to store vast quantities of data. Phase-change materials switch between two solid states—amorphous and crystalline—in response to a stimulus, such as heat, with an associated change in the physical properties of the material, including optical absorption, electrical conductance and Young’s modulus. The initial applications of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited the reversible change in their optical properties in rewritable optical data storage technologies. More recently, the change in their electrical conductivity has also been extensively studied in the development of non-volatile phase-change memories. Here we show that by combining the optical and electronic property modulation of such materials, display and data visualization applications that go beyond data storage can be created. Using extremely thin phase-change materials and transparent conductors, we demonstrate electrically induced stable colour changes in both reflective and semi-transparent modes. Further, we show how a pixelated approach can be used in displays on both rigid and flexible films. This optoelectronic framework using low-dimensional phase-change materials has many likely applications, such as ultrafast, entirely solid-state displays with nanometre-scale pixels, semi-transparent ‘smart’ glasses, ‘smart’ contact lenses and artificial retina devices.

Arithmetic and Biologically‐Inspired Computing Using Phase‐Change Materials

Computers in which processing and memory functions are performed simultaneously and at the same location have long been a scientific “dream”, since they promise dramatic improvements in performance along with the opportunity to design and build ‘brain-like’ systems.1–3 This “dream” has moved a step closer following recent investigations of so-called memristor (memory resistor) devices.4–8 However, phase-change materials also offer a promising route to the practical realisation of new forms of general-purpose and biologically-inspired computing.9–11 Here we provide, for the first time, an experimental proof-of-principle of such a phase-change material-based “processor”. We demonstrate reliable experimental execution of the four basic arithmetic processes of addition, multiplication, division and subtraction, with simultaneous storage of the result. This arithmetic functionality is possible because phase-change materials exhibit a natural accumulation property, a property that can also be exploited to implement an “integrate and fire” neuron.12, 13 The ability of phase-change devices to ‘remember’ previous excitations also imbues them with memristor-type functionality,4, 8 meaning that they can also provide synaptic-like learning.6, 7, 13 Our results demonstrate convincingly these remarkable computing capabilities of phase-change materials. Our experiments are performed in the optical domain, but equivalent processing capabilities are also inherent to electrical phase-change devices.

On‐Chip Photonic Memory Elements Employing Phase‐Change Materials

Phase-change materials integrated into nanophotonic circuits provide a flexible way to realize tunable optical components. Relying on the enormous refractive-index contrast between the amorphous and crystalline states, such materials are promising candidates for on-chip photonic memories. Nonvolatile memory operation employing arrays of microring resonators is demonstrated as a route toward all-photonic chipscale information processing.

Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices

Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.

Master-equation approach to understanding multistate phase-change memories and processors

A master-equation approach is used to perform dynamic modeling of phase-transformation processes that define the operating regimes and performance attributes of electronic (and optical) processors and multistate memory devices based on phase-change materials. The predictions of the so-called energy accumulation and direct-overwrite regimes, prerequisites for processing and memory functions, respectively, emerge in detail from the model, providing a theoretical framework for future device design and evaluation.

Fast simulation of phase-change processes in chalcogenide alloys using a Gillespie-type cellular automata approach

A stochastic cellular automata simulator capable of spatiotemporal modeling of the crystallization and amorphization behavior of phase-change materials during the complex annealing cycles used in optical and electrical memory applications is presented. This is based on consideration of bulk and surface energies to generate rates of growth and decay of crystallites built up from “monomers” that may themselves be quite complex molecules. The approach uses a stochastic Gillespie-type time-stepping algorithm to deal with events that may occur on a very wide range of time scales. The simulations are performed at molecular length scale and using an approximation of local free energy changes that depend only on immediate neighbors. The approach is potentially capable of spanning the length scales between ab initio atomistic modeling methods, such as density functional theory, and bulk-scale methods, such the Johnshon–Mehl–Avrami–Kolmogorov formalism. As an example the model is used to predict the crystallization behavior in the chalcogenide Ge2Sb2Te5 alloy commonly used in phase-change memory devices. The simulations include annealing cycles with nontrivial spatial and temporal variations in temperature, with good agreement to experimental incubation times at low temperatures while modeling nontrivial crystal size distributions and melting dynamics at higher temperatures.A stochastic cellular automata simulator capable of spatiotemporal modeling of the crystallization and amorphization behavior of phase-change materials during the complex annealing cycles used in optical and electrical memory applications is presented. This is based on consideration of bulk and surface energies to generate rates of growth and decay of crystallites built up from “monomers” that may themselves be quite complex molecules. The approach uses a stochastic Gillespie-type time-stepping algorithm to deal with events that may occur on a very wide range of time scales. The simulations are performed at molecular length scale and using an approximation of local free energy changes that depend only on immediate neighbors. The approach is potentially capable of spanning the length scales between ab initio atomistic modeling methods, such as density functional theory, and bulk-scale methods, such the Johnshon–Mehl–Avrami–Kolmogorov formalism. As an example the model is used to predict the crystallization...

An analytical model for nanoscale electrothermal probe recording on phase-change media

Scanning probe memories are now emerging as a means of achieving nanoscale resolution data storage. The use of microscopic conductive tips in contact with a phase-change material to record data as amorphous and crystalline marks is one such approach, making use of the large difference in electrical conductivity between the two phases to distinguish between two binary states on replay and hence provide a memory function. The writing process is complex and involves electronic, thermal, and phase-change processes that are difficult to model and study except using numerical techniques. A simplified analytical model of electrothermal writing by probe on a basic two-layer phase-change structure is developed here, and used to predict the required voltage levels for recording and the expected diameters of recorded crystalline and amorphous marks. A simplified model of cooling and solidification was also developed to study the cooling rates during amorphization. The predictions are shown to be in agreement with pu...

Threshold switching via electric field induced crystallization in phase-change memory devices

Phase-change devices exhibit characteristic threshold switching from the reset (off) to the set (on) state. Mainstream understanding of this electrical switching phenomenon is that it is initiated electronically via the influence of high electric fields on inter-band trap states in the amorphous phase. However, recent work has suggested that field induced (crystal) nucleation could instead be responsible. We compare and contrast these alternative switching “theories” via realistic simulations of device switching both with and without electric field dependent contributions to the system free energy. Results show that although threshold switching can indeed be obtained purely by electric field induced nucleation, the fields required are significantly larger than experimentally measured values.

Electric field induced crystallization in phase-change materials for memory applications

Emerging electrical memory technologies based on phase-change materials capitalize on a fast amorphous-to-crystalline transition. Recent evidence from measurements of relaxation oscillations and switching statistics in phase-change memory devices indicates the possibility that electric field induced crystal nucleation plays a dominant role in defining the characteristic electrical switching behavior. Here we present a detailed kinetics study of crystallization in the presence of an electric field for the phase-change material Ge2Sb2Te5. We derive quantitative crystallization maps to show the effects of both temperature and electric field on crystallization and we identify field ranges and parameter values where the electric field effects might play a significant role.

Design of practicable phase-change metadevices for near-infrared absorber and modulator applications

Phase-change chalcogenide alloys, such as Ge2Sb2Te5 (GST), have very different optical properties in their amorphous and crystalline phases. The fact that such alloys can be switched, optically or electrically, between such phases rapidly and repeatedly means that they have much potential for applications as tunable photonic devices. Here we incorporate chalcogenide phase-change films into a metal-dielectric-metal metamaterial electromagnetic absorber structure and design absorbers and modulators for operation at technologically important near-infrared wavelengths, specifically 1550 nm. Our design not only exhibits excellent performance (e.g. a modulation depth of ~77% and an extinction ratio of ~20 dB) but also includes a suitable means for protecting the GST layer from environmental oxidation and is well-suited, as confirmed by electro-thermal and phase-transformation simulations, to in situ electrical switching. We also present a systematic study of design optimization, including the effects of expected manufacturing tolerances on device performance and, by means of a sensitivity analysis, identify the most critical design parameters.