C. Fleta

Charged particle tracking with the Timepix ASIC

A prototype particle tracking telescope was constructed using Timepix and Medipix ASIC hybrid pixel assemblies as the six sensing planes. Each telescope plane consisted of one 1.4 cm2 assembly, providing a 256 ×256 array of 55μm square pixels. The telescope achieved a pointing resolution of 2.4μm at the position of the device under test. During a beam test in 2009 the telescope was used to evaluate in detail the performance of two Timepix hybrid pixel assemblies; a standard planar 300μm thick sensor, and 285μm thick double sided 3D sensor. This paper describes a charge calibration study of the pixel devices, which allows the true charge to be extracted, and reports on measurements of the charge collection characteristics and Landau distributions. The planar sensor achieved a best resolution of 4.0±0.1μm for angled tracks, and resolutions of between 4.4 and 11μm for perpendicular tracks, depending on the applied bias voltage. The double sided 3D sensor, which has significantly less charge sharing, was found to have an optimal resolution of 9.0±0.1μm for angled tracks, and a resolution of 16.0±0.2μm for perpendicular tracks. Based on these studies it is concluded that the Timepix ASIC shows an excellent performance when used as a device for charged particle tracking.

Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors

The very high radiation fluence expected at LHC (Large Hadron Collider) at CERN will induce serious changes in the electrical properties of the silicon detectors that will be used in the internal layers of the experiments (ATLAS, CMS, LHCb). To understand the influence of the fabrication technology in the radiation-induced degradation, silicon detectors were fabricated simultaneously with the three different possible technologies, P-in-N, N-in-N, and N-in-P, on standard and oxygenated float-zone silicon wafers. The diodes were irradiated with protons to fluences up to 10/sup 15/ cm/sup -2/. The measurements of the electrical characteristics, current-voltage and capacitance-voltage, are presented for the detectors manufactured with the three technologies. In terms of alpha factor (leakage current) the three technologies behave similarly. In terms of beta factor (effective doping concentration) N-in-P devices show the best performances.

Test beam results of 3D silicon pixel sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

Ultra-thin 3D silicon sensors for neutron detection

We present a novel neutron detector based on an ultra-thin 3D silicon sensor with a sensitive volume only 10 μm thick. This ultra-thin active volume allows a high gamma-ray rejection, a key requirement in order to discriminate the signal coming from the neutrons in a mixed neutron-gamma ray environment. The device upper-side is covered with a novel boron-based compound that detects neutrons by means of the 10B(n,α)7Li nuclear reaction. The performance of test devices has been investigated first with a gamma-ray source to evaluate the gamma-ray rejection factor, and then with an 241AmBe neutron source to assess the neutron-gamma ray discrimination properties.

Beam test studies of 3D pixel sensors irradiated non-uniformly for the ATLAS forward physics detector

Abstract Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

Geant4 and MCNPX simulations of thermal neutron detection with planar silicon detectors

We used Geant4 and MCNPX codes to evaluate the detection efficiency of planar silicon detectors coupled to different Boron-based converters with varied compositions and thicknesses that detect thermal neutrons via the 10B(n,α)7Li nuclear reaction. Few studies about the thermal neutron transport in Geant4 have been reported so far and it is becoming increasingly difficult to ignore its discrepancies with MCNPX in this neutron energy range. In the thermal energy range, Geant4 shows high discrepancies with MCNPX giving a maximum efficiency of about 3.3% in the 10B case whereas that obtained with MCNPX was 5%. Disagreements obtained between both codes in this energy range are analyzed and discussed.

Beam Test Measurements With Planar and 3D Silicon Strip Detectors Irradiated to sLHC Fluences

The planned luminosity upgrade of the CERN LHC to the super LHC (sLHC) requires investigation of new radiation hard tracking detectors. Compared to the LHC, tracking detectors must withstand a 5-10 times higher radiation fluence. Promising radiation hard options are planar silicon detectors with n-side readout and silicon detectors in 3D technology, where columnar electrodes are etched into the silicon substrate. This article presents beam test measurements per formed with planar and 3D n-in-p silicon strip detectors. The detectors were irradiated to different fluences, where the maximum fluence was 3 × 1015 1 MeV neutron equivalent particles per square centimeter (neq/cm2) for the planar detectors and 2 × 1015 neq/cm2 for the 3D detectors. In addition to signal measurements, charge sharing and resolution of both detector technologies are compared. An increased signal from the irradiated 3D detectors at high bias voltages compared to the signal from the unirradiated detector indicates that charge multiplication effects occur in the 3D detectors. At a bias voltage of 260 V, the 3D detector irradiated to 2 × 1015 neq/cm2 yields a signal almost twice as high as the signal of the unirradiated detector. Only 30% of the signal of an unirradiated detector could be measured with the planar detector irradiated to 3 × 1015 neq/cm2 at a bias voltage of 600 V, which was the highest bias voltage applied to this sensor.

Precision scans of the Pixel cell response of double sided 3D Pixel detectors to pion and X-ray beams

Three-dimensional (3D) silicon sensors offer potential advantages over standard planar sensors for radiation hardness in future high energy physics experiments and reduced charge-sharing for X-ray applications, but may introduce inefficiencies due to the columnar electrodes. These inefficiencies are probed by studying variations in response across a unit pixel cell in a 55μm pitch double-sided 3D pixel sensor bump bonded to TimePix and Medipix2 readout ASICs. Two complementary characterisation techniques are discussed: the first uses a custom built telescope and a 120GeV pion beam from the Super Proton Synchrotron (SPS) at CERN; the second employs a novel technique to illuminate the sensor with a micro-focused synchrotron X-ray beam at the Diamond Light Source, UK. For a pion beam incident perpendicular to the sensor plane an overall pixel efficiency of 93.0±0.5% is measured. After a 10o rotation of the device the effect of the columnar region becomes negligible and the overall efficiency rises to 99.8±0.5%. The double-sided 3D sensor shows significantly reduced charge sharing to neighbouring pixels compared to the planar device. The charge sharing results obtained from the X-ray beam study of the 3D sensor are shown to agree with a simple simulation in which charge diffusion is neglected. The devices tested are found to be compatible with having a region in which no charge is collected centred on the electrode columns and of radius 7.6±0.6μm. Charge collection above and below the columnar electrodes in the double-sided 3D sensor is observed.

Double Sided 3D Detector Technologies at CNM-IMB

A new architecture for 3D silicon radiation detectors is proposed which simplifies the fabrication process and avoids the limitations of 3D detectors technology. The detector consists in a three-dimensional array of electrodes that penetrate into the detector bulk. The geometry of the detector is such that a central anode is surrounded by four cathode contacts. This geometry gives a uniform electric field with the maximum drift and depletion distance set by the electrode spacing rather than detector thickness. This structure is similar to a conventional 3D detector, but has a simpler fabrication process. The technological and the electrical simulations together with the fabrication steps of this new detector configuration are reported in this paper.

Results from the first prototype of large 3D active edge sensors

3D active edge sensors have advantages such as radiation hardness and edgeless capability. With the use of deep reactive ion etching and wafer bonding, 18.5 by 20.5 mm2 3D detectors with active edges have been successfully fabricated at SINTEF MiNaLab. These sensors are compatible with the ATLAS FE-I4 readout electronics. Fabrication process and difficulties are presented and the preliminary electrical measurements are also discussed.