C. M. Marcus

Electron Transport in Quantum Dots

The ongoing miniaturization of solid state devices often leads to the question: “How small can we make resistors, transistors, etc., without changing the way they work?” The question can be asked a different way, however: “How small do we have to make devices in order to get fundamentally new properties?” By “new properties” we particularly mean those that arise from quantum mechanics or the quantization of charge in units of eeffects that are only important in small systems such as atoms. “What kind of small electronic devices do we have in mind?” Any sort of clustering of atoms that can be connected to source and drain contacts and whose properties can be regulated with a gate electrode. Practically, the clustering of atoms may be a molecule, a small grain of metallic atoms, or an electronic device that is made with modern chip fabrication techniques. It turns out that such seemingly different structures have quite similar transport properties and that one can explain their physics within one relatively simple framework. In this paper we investigate the physics of electron transport through such small systems.

Controlled fabrication of metallic electrodes with atomic separation

We report a technique for fabricating metallic electrodes on insulating substrates with separations on the 1 nm scale. The fabrication technique, which combines lithographic and electrochemical methods, provides atomic resolution without requiring sophisticated instrumentation. The process is simple, controllable, reversible, and robust, allowing rapid fabrication of electrode pairs with high yield. We expect the method to prove useful in interfacing molecular-scale structures to macroscopic probes and electronic devices.

Precision Cutting and Patterning of Graphene with Helium Ions

We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with approximately 15 nm feature sizes.

Gate-Activated Photoresponse in a Graphene p–n Junction

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes

Single-walled carbon nanotubes are synthesized by chemical vapor deposition of methane at controlled locations on a substrate using patterned catalytic islands. The combined synthesis and microfabrication technique presented here allows a large number of ohmically contacted nanotube devices with controllable length to be placed on a single substrate. Transport studies demonstrate ohmic contacting, giving two-terminal resistances as low as 20 kΩ at low temperatures.

An Adiabatic Quantum Electron Pump

A quantum pumping mechanism that produces dc current or voltage in response to a cyclic deformation of the confining potential in an open quantum dot is reported. The voltage produced at zero current bias is sinusoidal in the phase difference between the two ac voltages deforming the potential and shows random fluctuations in amplitude and direction with small changes in external parameters such as magnetic field. The amplitude of the pumping response increases linearly with the frequency of the deformation. Dependencies of pumping on the strength of the deformations, temperature, and breaking of time-reversal symmetry were also investigated.

Hot Carrier Transport and Photocurrent Response in Graphene

Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very inefficient electron cooling, resulting in an abundance of hot carriers. The hot-carrier-mediated energy transport dominates the photoresponse and manifests itself in quantum efficiencies that can exceed unity, as well as in a characteristic dependence of the photocurrent on gate voltages. The pattern of multiple photocurrent sign changes as a function of gate voltage provides a fingerprint of hot-carrier-dominated transport and carrier multiplication.

Etching of Graphene Devices with a Helium Ion Beam

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.

Triplet-singlet spin relaxation via nuclei in a double quantum dot

The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the electron spin to its orbital motion or to nuclear spins. Relaxation of confined electron spin has been previously measured only for Zeeman or exchange split spin states, where spin-orbit effects dominate relaxation; spin flips due to nuclei have been observed in optical spectroscopy studies. Using an isolated GaAs double quantum dot defined by electrostatic gates and direct time domain measurements, we investigate in detail spin relaxation for arbitrary splitting of spin states. Here we show that electron spin flips are dominated by nuclear interactions and are slowed by several orders of magnitude when a magnetic field of a few millitesla is applied. These results have significant implications for spin-based information processing.

Low-temperature fate of the 0.7 structure in a point contact: A kondo-like correlated state in an open system

Besides the usual conductance plateaus at multiples of 2e(2)/h, quantum point contacts typically show an extra plateau at approximately 0.7(2e(2)/h), believed to arise from electron-electron interactions that prohibit the two spin channels from being simultaneously occupied. We present evidence that the disappearance of the 0.7 structure at very low temperature signals the formation of a Kondo-like correlated spin state. Evidence includes a zero-bias conductance peak that splits in a parallel field, scaling of conductance to a modified Kondo form, and consistency between peak width and the Kondo temperature.