C.S. Wang

MEMS-tunable vertical-cavity SOAs

We present the signal gain, wavelength tuning characteristics, saturation properties, and noise figure (NF) of MEMS-based widely tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) for various optical cavity designs, and we compare the theoretical results to data generated from a number of experimental devices. Using general Fabry-Pe/spl acute/rot relationships, it is possible to model both the wavelength tuning characteristics and the peak signal gain of tunable vertical-cavity amplifiers, while a rate-equation analysis is used to describe the saturation output power and NF as a function of the VCSOA resonant wavelength. Additionally, the basic design principles for an integrated electrostatic actuator are outlined. It is found that MEMS-tunable VCSOAs follow many of the same design trends as fixed-wavelength devices. However, with tunable devices, the effects of varying mirror reflectance and varying single-pass gain associated with the MEMS-based tuning mechanism lead to changing amplifier properties over the wavelength span of the device.

First demonstration of a MEMS tunable vertical-cavity SOA

We present the first microelectromechanical tunable vertical-cavity semiconductor optical amplifier. The device operates in the long wavelength range and exhibits a minimum of 10 dB of device gain through 11 nm of tuning.

High output power 1540-nm vertical-cavity semiconductor optical amplifiers

Vertical-cavity semiconductor optical amplifiers operating at 1540 nm are presented. The use of optically pumped AlInGaAs MQW regions resulted in record-high saturation output power of +0.5 dBm and 17.6 dB of fiber-to-fiber gain.

Design and analysis of MEMS tunable vertical-cavity semiconductor optical amplifiers

We present revised widely-tunable vertical-cavity SOAs exhibiting a reduced tuning voltage and an increased wavelength tuning range. Additionally, detailed theoretical models have been developed and are shown to be in good agreement with experimental observations.

Microelectromechanical tunable long-wavelength vertical-cavity semiconductor optical amplifiers

We present the first demonstration of a microelectromechanical tunable vertical-cavity semiconductor optical amplifier. Electrostatic deflection of the membrane DBR structure has resulted in tunable amplification over an 11-nm wavelength range (1580-1569 nm), with a peak device gain of 17 dB.

Wavelength selection in MEMS tunable vertical-cavity SOAs

We analyze the tuning characteristics of MEMS tunable vertical-cavity semiconductor optical amplifiers. Completed devices exhibit 10 dB device gain over an 11 nm tuning range.