C. Van Hoof

The Photodetector Array Camera and Spectrometer (PACS) on the Herschel Space Observatory

The Photodetector Array Camera and Spectrometer (PACS) is one of the three science instruments on ESAs far infrared and submil- limetre observatory. It employs two Ge:Ga photoconductor arrays (stressed and unstressed) with 16 × 25 pixels, each, and two filled silicon bolometer arrays with 16 × 32 and 32 × 64 pixels, respectively, to perform integral-field spectroscopy and imaging photom- etry in the 60−210 μm wavelength regime. In photometry mode, it simultaneously images two bands, 60−85 μ mo r 85−125 μ ma nd 125−210 μm, over a field of view of ∼1.75 � × 3.5 � , with close to Nyquist beam sampling in each band. In spectroscopy mode, it images afi eld of 47 �� × 47 �� , resolved into 5 × 5 pixels, with an instantaneous spectral coverage of ∼ 1500 km s −1 and a spectral resolution of ∼175 km s −1 . We summarise the design of the instrument, describe observing modes, calibration, and data analysis methods, and present our current assessment of the in-orbit performance of the instrument based on the performance verification tests. PACS is fully operational, and the achieved performance is close to or better than the pre-launch predictions.

A 60

There is a growing demand for low-power, small-size and ambulatory biopotential acquisition systems. A crucial and important block of this acquisition system is the analog readout front-end. We have implemented a low-power and low-noise readout front-end with configurable characteristics for Electroencephalogram (EEG), Electrocardiogram (ECG), and Electromyogram (EMG) signals. Key to its performance is the new AC-coupled chopped instrumentation amplifier (ACCIA), which uses a low power current feedback instrumentation amplifier (IA). Thus, while chopping filters the 1/f noise of CMOS transistors and increases the CMRR, AC coupling is capable of rejecting differential electrode offset (DEO) up to plusmn50 mV from conventional Ag/AgCl electrodes. The ACCIA achieves 120 dB CMRR and 57 nV/radicHz input-referred voltage noise density, while consuming 11.1 muA from a 3 V supply. The chopping spike filter (CSF) stage filters the chopping spikes generated by the input chopper of ACCIA and the digitally controllable variable gain stage is used to set the gain and the bandwidth of the front-end. The front-end is implemented in a 0.5 mum CMOS process. Total current consumption is 20 muA from 3V

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Solar cells are the most commonly used devices in customer products to achieve power autonomy. This paper discusses a complementary approach to provide power autonomy to devices on a human body, i.e., thermoelectric conversion of human heat. In indoor applications, thermoelectric converters on the skin can provide more power per square centimeter than solar cells, particularly in adverse illumination conditions. Moreover, they work day and night. The first sensor nodes powered by human heat have been demonstrated and tested on people in 2004-2005. They used the state-of-the-art 100-muW watch-size thermoelectric wrist generators fabricated at IMEC and based on custom-design small-size BiTe thermopiles. The sensor node is completed with a power conditioning module, a microcontroller, and a wireless transceiver mounted on a watchstrap

W 60 nV/

Spherical MnAs ferromagnetic particles with controllable diameters (5–30 nm) are embedded in a high quality GaAs matrix. The particles are formed in a two step process consisting of the epitaxy of a homogeneous Ga1−xMnxAs layer at low temperatures using molecular beam epitaxy followed by phase separation upon annealing. During the annealing step, the excess arsenic in the as‐grown film forms magnetic MnAs precipitates with the Mn from the Ga1−xMnxAs lattice. Structural and room‐temperature magnetic properties of the heterogeneous GaAs:MnAs films are described. The magnetic MnAs rich layers can be incorporated into semiconductor heterostructures as demonstrated by growing (GaAs/AlAs) multiple quantum well structures in combination with GaAs:MnAs layers.

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The design and fabrication techniques for microelectromechanical systems (MEMS) and nanodevices are progressing rapidly. However, due to material and process flow incompatibilities in the fabrication of sensors, actuators and electronic circuitry, a final packaging step is often necessary to integrate all components of a heterogeneous microsystem on a common substrate. Robotic pick-and-place, although accurate and reliable at larger scales, is a serial process that downscales unfavorably due to stiction problems, fragility and sheer number of components. Self-assembly, on the other hand, is parallel and can be used for device sizes ranging from millimeters to nanometers. In this review, the state-of-the-art in methods and applications for self-assembly is reviewed. Methods for assembling three-dimensional (3D) MEMS structures out of two-dimensional (2D) ones are described. The use of capillary forces for folding 2D plates into 3D structures, as well as assembling parts onto a common substrate or aggregating parts to each other into 2D or 3D structures, is discussed. Shape matching and guided assembly by magnetic forces and electric fields are also reviewed. Finally, colloidal self-assembly and DNA-based self-assembly, mainly used at the nanoscale, are surveyed, and aspects of theoretical modeling of stochastic assembly processes are discussed.

Hz Readout Front-End for Portable Biopotential Acquisition Systems

This paper gives an overview of the results of BMECs Human++ research program. This program aims to achieve highly miniaturized and autonomous sensor systems that enable people to carry their personal body area network. The body area network will provide medical, lifestyle, assisted living, sports or entertainment functions. It combines expertise in wireless ultra-low power communications, packaging, 3D integration technologies, MEMS energy scavenging techniques and low-power design techniques.

Thermoelectric Converters of Human Warmth for Self-Powered Wireless Sensor Nodes

This paper presents a pseudo-2-D surface potential model for the double-gate tunnel field-effect transistor (DG-TFET). Analytical expressions are derived for the 2-D potential, electric field, and generation rate, and used to numerically extract the tunneling current. The model predicts the device characteristics for a large range of parameters and allows gaining insight on the device physics. The depletion regions induced inside the source and drain are included in the solution, and we show that these regions become critical when scaling the device length. The fringing field effect from the gates on these regions is also included. The validity of the model is tested for devices scaled to 10-nm length with SiO2 and high-¿ dielectrics by comparison to 2-D finite-element simulations.

Nanometer‐scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy

The Franz–Keldysh oscillations induced by the electric field in the depleted zone below the GaAs surface are studied by photoreflectance spectroscopy. The electric field is precisely controlled by a molecular beam epitaxy grown buried highly doped layer and the pinned position of the Fermi level at the surface. It is shown that the electric field value as derived from theory is in disagreement with the value derived from electrostatic calculations. Consequently a determination of the Fermi level pinning is only possible from a measurement of both n‐ and p‐doped samples.

Self-Assembly from Milli- to Nanoscales: Methods and Applications

Strained single quantum wells composed of GaAs/InGaAs/GaAs were grown by molecular beam epitaxy and characterized at room temperature by photoreflectance and at 6 and 77 K by photoluminescence spectroscopy. For the InGaAs/GaAs heterojunction, utilizing a band offset ratio of 85:15 (conduction band:valence band) for the intrinsic (nonstrained) interface and a contribution of the hydrostatic compression to the valence band movement corresponding to the pressure sensitivity of the spin orbit band, excellent agreement is found between calculated excitonic transition energies and those found by experiment at all temperatures studied. Our analysis indicates that material parameters and the combined strain components used to calculate band structure are not temperature dependent to our degree of sensitivity. An empirical equation, which differs slightly from that for bulk InGaAs crystals, describing the nonstrained band‐gap energy as a function of In fraction at 77 K is presented. The difference between band off...

Human++: autonomous wireless sensors for body area networks

This paper presents an active electrode system for gel-free biopotential EEG signal acquisition. The system consists of front-end chopper amplifiers and a back-end common-mode feedback (CMFB) circuit. The front-end AC-coupled chopper amplifier employs input impedance boosting and digitally-assisted offset trimming. The former increases the input impedance of the active electrode to 2 GΩ at 1 Hz and the latter limits the chopping induced output ripple and residual offset to 2 mV and 20 mV, respectively. Thanks to chopper stabilization, the active electrode achieves 0.8 μVrms (0.5-100 Hz) input referred noise. The use of a back-end CMFB circuit further improves the CMRR of the active electrode readout to 82 dB at 50 Hz. Both front-end and back-end circuits are implemented in a 0.18 μm CMOS process and the total current consumption of an 8-channel readout system is 88 μA from 1.8 V supply. EEG measurements using the proposed active electrode system demonstrate its benefits compared to passive electrode systems, namely reduced sensitivity to cable motion artifacts and mains interference.