C. Wang

Surface participation and dielectric loss in superconducting qubits

We study the energy relaxation times (T1) of superconducting transmon qubits in 3D cavities as a function of dielectric participation ratios of material surfaces. This surface participation ratio, representing the fraction of electric field energy stored in a dissipative surface layer, is computed by a two-step finite-element simulation and experimentally varied by qubit geometry. With a clean electromagnetic environment and suppressed non-equilibrium quasiparticle density, we find an approximately proportional relation between the transmon relaxation rates and surface participation ratios. These results suggest dielectric dissipation arising from material interfaces is the major limiting factor for the T1 of transmons in 3D circuit quantum electrodynamics architecture. Our analysis also supports the notion of spatial discreteness of surface dielectric dissipation.

Demonstration of superconducting micromachined cavities

Superconducting enclosures will be key components of scalable quantum computing devices based on circuit quantum electrodynamics. Within a densely integrated device, they can protect qubits from noise and serve as quantum memory units. Whether constructed by machining bulk pieces of metal or microfabricating wafers, 3D enclosures are typically assembled from two or more parts. The resulting seams potentially dissipate crossing currents and limit performance. In this letter, we present measured quality factors of superconducting cavity resonators of several materials, dimensions, and seam locations. We observe that superconducting indium can be a low-loss RF conductor and form low-loss seams. Leveraging this, we create a superconducting micromachined resonator with indium that has a quality factor of two million, despite a greatly reduced mode volume. Inter-layer coupling to this type of resonator is achieved by an aperture located under a planar transmission line. The described techniques demonstrate a proof-of-principle for multilayer microwave integrated quantum circuits for scalable quantum computing.

Suspending superconducting qubits by silicon micromachining

We present a method for relieving aluminum 3D transmon qubits from a silicon substrate using micromachining. Our technique is a high yield, one-step deep reactive ion etch that requires no additional fabrication processes, and results in the suspension of the junction area and edges of the aluminum film. The drastic change in the device geometry affects both the dielectric and flux noise environment experienced by the qubit. In particular, the participation ratios of various dielectric interfaces are significantly modified, and suspended qubits exhibited longer

Implementing and Characterizing Precise Multiqubit Measurements

T_1

Robust readout of bosonic qubits in the dispersive coupling regime

s than non-suspended ones. We also find that suspension increases the flux noise experienced by tunable SQUID-based qubits.

Deterministic teleportation of a quantum gate between two logical qubits

Multiqubit measurements will play a vital role in quantum information processing. A new experiment constructs complex measurements on three superconducting qubits and develops important tools toward characterizing them.