Caleb D. Corolewski
Washington State University
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Featured researches published by Caleb D. Corolewski.
Journal of Applied Physics | 2015
M. D. McCluskey; Caleb D. Corolewski; Jinpeng Lv; Marianne C. Tarun; Samuel T. Teklemichael; Eric D. Walter; M. Grant Norton; Kale W. Harrison; Su Ha
Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g⊥ = 2.0015 and g// = 2.0056, along with an isotropic center at g = 2.0035.
AIP Advances | 2015
Narendra S. Parmar; Caleb D. Corolewski; M. D. McCluskey; Kelvin G. Lynn
ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 1016 cm−3. IR measurements show a local vibrational mode (LVM) at 3226 cm−1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm−1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.
Journal of Applied Physics | 2016
Caleb D. Corolewski; Narendra S. Parmar; Kelvin G. Lynn; M. D. McCluskey
Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>1019 cm−3). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm−1, attributed to surface O-H species. When Li2CO3 is used, a structured blue luminescence band and O-H mode at 3327 cm−1 are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level ∼0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.
AIP Advances | 2015
Violet M. Poole; Caleb D. Corolewski; M. D. McCluskey
Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO3, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm2/V s were measured, an order of magnitude higher than those for electrons (5-10 cm2/V s). Average hole densities were in the 109-1010 cm−3 range, consistent with a deep acceptor.
Journal of Materials Science: Materials in Electronics | 2015
Kale W. Harrison; Caleb D. Corolewski; M. D. McCluskey; Jeffrey Lindemuth; Su Ha; M. Grant Norton
Molybdenum dioxide (MoO2) is a mixed ionic electronic conductor with potential applications in energy storage and conversion. There is some ambiguity about the nature of the electronic conduction mechanism and its temperature dependence. Conductivity data as a function of temperature were obtained and explained within the framework of the band structure to support the description of MoO2 as a semi-metal. AC Hall effect measurements found low electron mobilities as expected for d band conduction. Collectively the data supported a combined conduction model including residual conductivity, low temperature hopping and impurity band conduction from Mo 4d bands degenerate with the conduction band.
Optical Materials | 2016
Dinesh Thapa; Jesse Huso; John L. Morrison; Caleb D. Corolewski; M. D. McCluskey; Leah Bergman
Journal of Materials Science: Materials in Electronics | 2017
Dinesh Thapa; Jesse Huso; Kevin Miklos; Peter M. Wojcik; David N. McIlroy; John L. Morrison; Caleb D. Corolewski; M. D. McCluskey; Thomas J. Williams; M. Grant Norton; Leah Bergman
Bulletin of the American Physical Society | 2015
Dinesh Thapa; Jesse Huso; Hui Che; Amrah Canul; Caleb D. Corolewski; McCluskey; Leah Bergman
Bulletin of the American Physical Society | 2015
Jesse Huso; Dinesh Thapa; Hui Che; Amrah Canul; Caleb D. Corolewski; McCluskey; Leah Bergman
Bulletin of the American Physical Society | 2015
Dinesh Thapa; Jesse Huso; Hui Che; Amrah Canul; John L. Morrison; Caleb D. Corolewski; McCluskey; Leah Bergman