Hui Che

Probing embedded structural inhomogeneities in MgZnO alloys via selective resonant Raman scattering

The issue of phase segregation, inherent to the MgZnO alloy system, was investigated via selective resonant Raman scattering. We demonstrate that it is a highly sensitive technique for the detection of embedded structural inhomogeneities. MgZnO thin-films with bandgaps that span the UV-range of 3.2–5.7 eV were realized. Under resonant conditions facilitated via different laser excitation energies, the LO-phonon behavior indicated that the phase segregation is in the range of 35%–65% Mg, in which domains of hexagonal-wurtzite and cubic-NaCl structures coexist. The scattering of the forbidden LO-mode of the cubic phase is discussed in terms of inversion-symmetry relaxation due to alloying.

Phonon dynamics and Urbach energy studies of MgZnO alloys

The MgxZn1−xO alloy system is emerging as an environmentally friendly choice in ultraviolet lighting and sensor technologies. Knowledge of defects which impact their optical and material properties is a key issue for utilization of these alloys in various technologies. The impact of phase segregation, structural imperfections, and alloy inhomogeneities on the phonon dynamics and electronic states of MgxZn1−xO thin films were studied via selective resonant Raman scattering (SRRS) and Urbach analyses, respectively. A series of samples with Mg composition from 0–68% were grown using a sputtering technique, and the optical gaps were found to span a wide UV range of 3.2–5.8 eV. The extent of the inherent phase segregation was determined via SRRS using two UV-laser lines to achieve resonance with the differing optical gaps of the embedded cubic and wurtzite structural domains. The occurrence of Raman scattering from cubic structures is discussed in terms of relaxation of the selection rules due to symmetry brea...

ZnO and MgZnO nanocrystalline flexible films: optical and material properties

An emerging material for flexible UV applications is MgxZn1-xO which is capable of tunable bandgap and luminescence in the UV range of ∼3.4 eV-7.4 eV depending on the composition x. Studies on the optical and material characteristics of ZnO and Mg0.3Zn0.7O nanocrystalline flexible films are presented. The analysis indicates that the ZnO and Mg0.3Zn0.7O have bandgaps of 3.34 eV and 4.02 eV, respectively. The photoluminescence (PL) of the ZnO film was found to exhibit a structural defect-related emission at ∼3.316 eV inherent to the nanocrystalline morphology. The PL of the Mg0.3Zn0.7O film exhibits two broad peaks at 3.38 eV and at 3.95 eV that are discussed in terms of the solubility limit of the ZnO-MgO alloy system. Additionally, external deformation of the film did not have a significant impact on its properties as indicated by the Raman LO-mode behavior, making these films attractive for UV flexible applications.

Microstructure evolution and photoluminescence in nanocrystalline MgxZn1 ? xO thin films

The effects of Mg concentration and annealing temperature on the characteristics of nanocrystalline Mg(x)Zn(1 - x)O thin films (where x = 0-0.4) were studied using electron microscopy and photoluminescence. The films were prepared by a sol-gel method. The solid solubility limit of MgO in ZnO for the sol-gel-derived Mg(x)Zn(1 - x)O films in the present study was determined to be ∼ 20 at.%. Microstructural characterization of the films showed that the wurtzite crystallites decrease in size with increase in Mg concentration up to the solubility limit. Increasing Mg concentration beyond the solubility limit resulted in a decrease in crystallinity of the films. The bandgap energy was found to increase with Mg concentration whereas the linewidth first increased and then decreased when the Mg concentration was increased beyond the solubility limit. Photoluminescence properties have been correlated to the microstructure of the films. A growth mechanism for Mg(x)Zn(1 - x)O nanocrystalline films under the present processing conditions has also been proposed.

Phonon dynamics and anharmonicity in phase segregated structural domains of MgZnO film

Phonon decay channels and anharmonicities in embedded domains in MgZnO film were studied via selective resonant Raman scattering at the elevated temperature regime up to 870 K. The resonant conditions provided by excitation with different ultraviolet laser lines enabled the detection of longitudinal optical (LO) phonons from domains with the wurtzite structure, and domains with the cubic rocksalt structure which lack inversion symmetry due to alloying. The phonon behavior was modeled in terms of three- and four-phonon decay processes using Ridley and Klemens type decay processes. It is found that the wurtzite phase displays dominantly three-phonon decay with a small four-phonon component. In contrast, the cubic phase displays a higher degree of anharmonicity in which the four-phonon processes contribute significantly to the temperature dependent frequency shift. At the elevated temperature range, the LO frequency shift rate is ∼−2.6 × 10−2 cm−1/K for the wurtzite structure while that of the cubic exhibits a much larger shift rate of ∼−1.6 × 10−1 cm−1/K. The larger anharmonicity of the domains with the cubic structure is discussed in terms of strain and deformation effects.