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Cao Duo

Chinese Academy of Sciences

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Featured researches published by Cao Duo.

无机材料学报 | 2012

采用水基原子层沉积工艺在石墨烯上沉积Al 2 O 3 介质薄膜研究

Zhang Youwei; Wan Li; Cheng Xinhong; Wang Zhongjian; Xia Chao; Cao Duo; Jia Tingting; Yu Yuehui

采用水基原子层沉积(H 2 O-based ALD)方法在石墨烯上直接生长Al 2 O 3 介质薄膜, 研究了Al 2 O 3 成核机理. 原子力显微镜(AFM)对Al 2 O 3 薄膜微观形态分析表明, 沉积温度决定着Al 2 O 3 在石墨烯表面的成核生长情况, 物理吸附在石墨烯表面的水分子是Al 2 O 3 成核的关键, 物理吸附水分子的均匀性直接影响Al 2 O 3 薄膜的均匀性. 在适当的温度窗口(100~130℃), Al 2 O 3 可以均匀沉积在石墨烯上, AFM测得Al 2 O 3 薄膜表面均方根粗糙度(RMS)为0.26 nm, X射线光电子能谱(XPS)表面分析与元素深度剖析表明, 120℃下在石墨烯表面沉积的Al 2 O 3 薄膜中O和Al元素的含量比约为1.5. 拉曼光谱分析表明, 采用H 2 O-based ALD工艺沉积栅介质薄膜不会降低石墨烯晶体质量.采用水基原子层沉积(H 2 O-based ALD)方法在石墨烯上直接生长Al 2 O 3 介质薄膜, 研究了Al 2 O 3 成核机理. 原子力显微镜(AFM)对Al 2 O 3 薄膜微观形态分析表明, 沉积温度决定着Al 2 O 3 在石墨烯表面的成核生长情况, 物理吸附在石墨烯表面的水分子是Al 2 O 3 成核的关键, 物理吸附水分子的均匀性直接影响Al 2 O 3 薄膜的均匀性. 在适当的温度窗口(100~130℃), Al 2 O 3 可以均匀沉积在石墨烯上, AFM测得Al 2 O 3 薄膜表面均方根粗糙度(RMS)为0.26 nm, X射线光电子能谱(XPS)表面分析与元素深度剖析表明, 120℃下在石墨烯表面沉积的Al 2 O 3 薄膜中O和Al元素的含量比约为1.5. 拉曼光谱分析表明, 采用H 2 O-based ALD工艺沉积栅介质薄膜不会降低石墨烯晶体质量.

Archive | 2014

Preparation method for high-K medium film

Cheng Xinhong; Cao Duo; Jia Tingting; Wang Zhongjian; Xu Dawei; Xia Chao; Song Chaorui; Yu Yuehui

Archive | 2014

Super junction device with multiple embedded P islands and N channels and preparation method thereof

Cheng Xinhong; Wang Zhongjian; Xu Dawei; Xia Chao; Cao Duo; Jia Tingting; Song Chaorui; Yu Yuehui

Archive | 2014

Embedded multi-N-island P-channel hyperconjugation device and preparation method thereof

Cheng Xinhong; Wang Zhongjian; Xu Dawei; Xia Chao; Cao Duo; Jia Tingting; Song Chaorui; Yu Yuehui

Archive | 2016

Fluorinated graphene passivated AlGaN/GaN HEMT (high electron mobility transistor) device and manufacturing method therefor

Cheng Xinhong; Shen Lingyan; Wang Zhongjian; Cao Duo; Zheng Li; Wang Qian; Zhang Dongliang; Li Jingjie; Yu Yuehui

Archive | 2015

Silicon On Insulator (SOI) Reduced Surface Field (RESURF) superjunction device structure and production method thereof

Cheng Xinhong; Xia Chao; Wang Zhongjian; Cao Duo; Zheng Li; Jia Tingting; Yu Yuehui

Archive | 2015

Photoelectric detector preparation method based on thin-film semiconductor-graphene heterojunction

Cheng Xinhong; Zheng Li; Wang Zhongjian; Cao Duo; Wang Qian; Shen Lingyan; Zhang Dongliang; Yu Yuehui

Journal of Semiconductors | 2012

A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate

Wang Zhongjian; Cheng Xinhong; Xia Chao; Xu Dawei; Cao Duo; Song Zhaorui; Yu Yuehui; Shen Dashen

Archive | 2016

SiC-LDMOS power meter device and preparation method thereof

Cheng Xinhong; Xia Chao; Wang Zhongjian; Xu Dawei; Cao Duo; Zheng Li; Shen Lingyan; Wang Qian; Yu Yuehui

Archive | 2015

Preparation method for reversible N type graphene induced by water-based ALD (Atomic Layer Deposition)

Cheng Xinhong; Zheng Li; Wang Zhongjian; Cao Duo; Wang Qian; Shen Lingyan; Zhang Dongliang; Yu Yuehui

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Cheng Xinhong

Chinese Academy of Sciences

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Wang Zhongjian

Chinese Academy of Sciences

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Yu Yuehui

Chinese Academy of Sciences

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Xia Chao

Chinese Academy of Sciences

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Xu Dawei

Chinese Academy of Sciences

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Zhang Dongliang

Chinese Academy of Sciences

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Yu Yuehui

Chinese Academy of Sciences

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Song Zhaorui

Chinese Academy of Sciences

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Wan Li

Wenzhou University

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Zhang Youwei

Chinese Academy of Sciences

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