Xu Dawei

The Upsurge of Domestic Patent Applications in China: Is R&D Expenditure or Patent Subsidy Policy Responsible?

This chapter studies the impact of Chinese government policies on the upsurge of domestic patent applications in China. We find that the explosion in the number of patent applications in China is significantly correlated with increased expenditure on R&D by companies, universities and other entities. However, based on regression modeling, we also find that provincial government subsidy programs have played a crucial role in the upsurge in domestic applications since 2010. Disconcertingly, patent quality is diminished by these subsidy programs due to the distorted incentive structure that they create for filing patent applications. The Chinese experience has important policy implications for other countries.

An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

In this paper, the authors present an analytical model for coplanar waveguide on silicon-on-insulator substrate. The four-element topological network and the conformal mapping technique are used to analyse the capacitance and the conductance of the sandwich substrate. The validity of the model is verified by the full-wave method and the experimental data. It is found that the inductance, the resistance, the capacitance and the conductance from the analytical model show they are in good agreement with the corresponding values extracted from experimental S-parameter until 10 GHz.

Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA

Nickel fully silicided (Ni-FUSI) gate material has been fabricated on a HfO2 surface to form a Ni-FUSI gate/HfO2/Si/Al (MIS) structure by using an ultra-high vacuum e-beam evaporation (EBV) method followed by a one step rapid thermal annealing (RTA) treatment. X-ray diffraction (XRD) and Raman spectroscopy were used to reveal the microstructures and electrical properties of the MIS structure. Results show that a one step post RTA treatment is enough to promote the full reaction of nickel silicide, compared with multiple RTA treatments. Furthermore, the HfO2 gate dielectric film is sensitive to heat treatment, and multiple RTA treatments can damage the electrical properties of the HfO2 film rather than improve them. By optimization of the sample fabrication technique, the MIS capacitor produces good high-frequency capacitance-voltage curves with a hysteresis of 30 mV, a work function of about 5.44–5.53 eV and leakage current density of only 1.45 × 10−8 A/cm2 at −1 V gate bias.