Caozheng Diao

Achieving a high magnetization in sub-nanostructured magnetite films by spin-flipping of tetrahedral Fe3+ cations

Magnetite Fe3O4 (ferrite) has attracted considerable interest for its exceptional physical properties: It is predicted to be a semimetallic ferromagnetic with a high Curie temperature, it displays a metal-insulator transition, and has potential oxide-electronics applications. Here, we fabricate a high-magnetization (> 1 Tesla) high-resistance (~0.1 Ω·cm) sub-nanostructured (grain size < 3 nm) Fe3O4 film via grain-size control and nano-engineering. We report a new phenomenon of spin-flipping of the valence-spin tetrahedral Fe3+ in the sub-nanostructured Fe3O4 film, which produces the high magnetization. Using soft X-ray magnetic circular dichroism and soft X-ray absorption, both at the Fe L3,2- and O K-edges, and supported by first-principles and charge-transfer multiple calculations, we observe an anomalous enhancement of double exchange, accompanied by a suppression of the superexchange interactions because of the spin-flipping mechanism via oxygen at the grain boundaries. Our result may open avenues for developing spin-manipulated giant magnetic Fe3O4-based compounds via nano-grain size control.

Coexistence of Midgap Antiferromagnetic and Mott States in Undoped, Hole- and Electron-Doped Ambipolar Cuprates.

We report the first observation of the coexistence of a distinct midgap state and a Mott state in undoped and their evolution in electron and hole-doped ambipolar Y_{0.38}La_{0.62}(Ba_{0.82}La_{0.18})_{2}Cu_{3}O_{y} films using spectroscopic ellipsometry and x-ray absorption spectroscopies at the O K and Cu L_{3,2} edges. Supported by theoretical calculations, the midgap state is shown to originate from antiferromagnetic correlation. Surprisingly, while the magnetic state collapses and its correlation strength weakens with dopings, the Mott state in contrast moves toward a higher energy and its correlation strength increases. Our result provides important clues to the mechanism of electronic correlation strengths and superconductivity in cuprates.

Large Enhancement of 2D Electron Gases Mobility Induced by Interfacial Localized Electron Screening Effect

The interactions between delocalized and localized charges play important roles in correlated electron systems. Here, using a combination of transport measurements, spectroscopic ellipsometry (SE), and X-ray absorption spectroscopy (XAS) supported by theoretical calculations, we reveal the important role of interfacial localized charges and their screening effects in determining the mobility of (La0.3 Sr0.7 )(Al0.65 Ta0.35 )O3 /SrTiO3 (LSAT/SrTiO3 ) interfaces. When the LSAT layer thickness reaches the critical value of 5 uc, the insulating interface abruptly becomes conducting, accompanied by the appearance of a new midgap state. This midgap state emerges at ≈1 eV below the Ti t2g band and shows a strong character of Ti 3dxy - O 2p hybridization. Increasing the LSAT layer from 5 to 18 uc, the number of localized charges increases, resulting in an enhanced screening effect and higher mobile electron mobility. This observation contradicts the traditional semiconductor interface where the localized charges always suppress the carrier mobility. These results demonstrate a new strategy to probe localized charges and mobile electrons in correlated electronic systems and highlight the important role of screening effects from localized charges in improving the mobile electron mobility at complex oxide interfaces.

Modulation of Manganite Nanofilm Properties Mediated by Strong Influence of Strontium Titanate Excitons

Hole-doped perovskite manganites have attracted much attention because of their unique optical, electronic, and magnetic properties induced by the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, a comprehensive investigation of the optical, electronic, and magnetic properties of La0.7Sr0.3MnO3 thin films on SrTiO3 (LSMO/STO) and other substrates is conducted using a combination of temperature-dependent transport, spectroscopic ellipsometry, X-ray absorption spectroscopy, and X-ray magnetic circular dichroism. A significant difference in the optical property of LSMO/STO that occurs even in thick (87.2 nm) LSMO/STO from that of LSMO on other substrates is discovered. Several excitonic features are observed in thin film nanostructure LSMO/STO at ∼4 eV, which could be attributed to the formation of anomalous charged excitonic complexes. On the basis of the spectral weight transfer analysis, anomalous excitonic effects from STO strengthen the electronic correlation in LSMO films. This results in the occurrence of optical spectral changes related to the intrinsic Mott-Hubbard properties in manganites. We find that while lattice strain from the substrate influences the optical properties of the LSMO thin films, the coexistence of strong electron-electron (e-e) and electron-hole (e-h) interactions which leads to the resonant excitonic effects from the substrate plays a much more significant role. Our result shows that the onset of anomalous excitonic dynamics in manganite oxides may potentially generate new approaches in manipulating exciton-based optoelectronic applications.

An accurate optical design method for synchrotron radiation beamlines with wave-front aberration theory

An aberration calculation method which was developed by Lu [1] can treat individual aberration term precisely. Spectral aberration is the linear sum of these aberration terms, and the aberrations of multi-element systems also can be calculated correctly when the stretching ratio, defined herein, is unity. Evaluation of focusing mirror-grating systems which are optimized according to Lu’s method, along with the Light Path Function (LPF) and the Spot Diagram method (SD) are discussed to confirm the advantage of Lu’s methodology. Lu’s aberration terms are derived from a precise wave-front treatment, whereas the terms of the power series expansion of the light path function do not yield an accurate sum of the aberrations. Moreover, Lu’s aberration terms can be individually optimized. This is not possible with the analytical spot diagram formulae.