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Dive into the research topics where Xinmao Yin is active.

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Featured researches published by Xinmao Yin.


Nature Communications | 2013

Oxygen-driven anisotropic transport in ultra-thin manganite films

Baomin Wang; Lu You; Peng Ren; Xinmao Yin; Yuan Peng; Bin Xia; Lan Wang; Xiaojiang Yu; Sock Mui Poh; Ping Yang; Guoliang Yuan; Lang Chen; Andrivo Rusydi; Junling Wang

Transition metal oxides have a range of unique properties due to coupling of charge, spin, orbital and lattice degrees of freedom and nearly degenerate multiple ground states. These properties make them interesting for applications and for fundamental investigations. Here we report a new phase with abnormal transport anisotropy in La0.7Sr0.3MnO3 ultra-thin films under large tensile strain. This anisotropy is absent in films under smaller tensile strain or compressive strain. Furthermore, thickness and magnetic-field-dependent experiments suggest that the tensile-strain-induced two-dimensional character is crucial for the observed phenomena. X-ray absorption spectroscopy results indicate that this anisotropy is likely driven by O 2p orbital, which hybridizes with Mn 3d. Ab initio calculations confirm this result. Our results may help to understand the anisotropic transport behaviour observed in other systems.


Applied Physics Letters | 2017

Self-powered sensitive and stable UV-visible photodetector based on GdNiO3/Nb-doped SrTiO3 heterojunctions

Le Wang; Lei Chang; Xinmao Yin; Lu You; Jiali Zhao; Haizhong Guo; Kui-juan Jin; Kurash Ibrahim; Jiaou Wang; Andrivo Rusydi; Junling Wang

The properties of perovskite nickelates are very sensitive to their oxygen content, which allows us to tune their electronic structures by varying the oxygen partial pressure during film deposition. Under the optimized condition, we have obtained GdNiO3 films that are sensitive to a wide spectrum of light. By combining the GdNiO3 film with Nb-doped SrTiO3 to form a heterojunction, we design a self-powered photodetector with high sensitivity toward light with a wavelength between 650 nm and 365 nm. Under 365 nm illumination (50 μW/cm2), the device shows a responsivity of 0.23 A/W at 0 V bias, comparable to or even better than the ultraviolet photodetectors made of semiconductor materials such as GaN or ZnO. The photo-dark ratio can be close to 103 when the power light density reaches 0.6 mW/cm2. Moreover, the device performance is very stable without any decay after 6 months.


Nano Research | 2015

Achieving a high magnetization in sub-nanostructured magnetite films by spin-flipping of tetrahedral Fe3+ cations

Tun Seng Herng; Wen Xiao; Sock Mui Poh; F. He; Ronny Sutarto; Xiaojian Zhu; Run-Wei Li; Xinmao Yin; Caozheng Diao; Yang Yang; Xuelian Huang; Xiaojiang Yu; Yuan Ping Feng; Andrivo Rusydi; Jun Ding

Magnetite Fe3O4 (ferrite) has attracted considerable interest for its exceptional physical properties: It is predicted to be a semimetallic ferromagnetic with a high Curie temperature, it displays a metal-insulator transition, and has potential oxide-electronics applications. Here, we fabricate a high-magnetization (> 1 Tesla) high-resistance (~0.1 Ω·cm) sub-nanostructured (grain size < 3 nm) Fe3O4 film via grain-size control and nano-engineering. We report a new phenomenon of spin-flipping of the valence-spin tetrahedral Fe3+ in the sub-nanostructured Fe3O4 film, which produces the high magnetization. Using soft X-ray magnetic circular dichroism and soft X-ray absorption, both at the Fe L3,2- and O K-edges, and supported by first-principles and charge-transfer multiple calculations, we observe an anomalous enhancement of double exchange, accompanied by a suppression of the superexchange interactions because of the spin-flipping mechanism via oxygen at the grain boundaries. Our result may open avenues for developing spin-manipulated giant magnetic Fe3O4-based compounds via nano-grain size control.


EPL | 2014

Optical and electronic structure of quasi-freestanding multilayer graphene on the carbon face of SiC

Iman Santoso; Swee Liang Wong; Xinmao Yin; Pranjal Kumar Gogoi; Teguh Citra Asmara; Han Huang; Wei Chen; Andrew Thye Shen Wee; Andrivo Rusydi

We report the optical and electronic properties of multilayer graphene films grown epitaxially on the carbon face (C-face) of 4H-SiC probed using spectroscopic ellipsometry (SE) and angle-resolved photoemission spectroscopy (ARPES). The optical conductivity in the energy range from 1.0 to 5.3 eV extracted from SE reveals two important features: the presence of universal conductivity at the near-infrared region and asymmetric resonant excitons at 4.5 eV. Furthermore, ARPES shows the presence of independent linear electronic dispersion. These features resemble quasi-freestanding properties of multilayer graphene grown on the C-face of SiC.


Nature Communications | 2017

Tunable inverted gap in monolayer quasi-metallic MoS 2 induced by strong charge-lattice coupling

Xinmao Yin; Qixing Wang; Liang Cao; Chi Sin Tang; Xin Luo; Yujie Zheng; Lai Mun Wong; Shijie Wang; Su Ying Quek; Wenjing Zhang; Andrivo Rusydi; Andrew Thye Shen Wee

Polymorphism of two-dimensional transition metal dichalcogenides such as molybdenum disulfide (MoS2) exhibit fascinating optical and transport properties. Here, we observe a tunable inverted gap (~0.50 eV) and a fundamental gap (~0.10 eV) in quasimetallic monolayer MoS2. Using spectral-weight transfer analysis, we find that the inverted gap is attributed to the strong charge–lattice coupling in two-dimensional transition metal dichalcogenides (2D-TMDs). A comprehensive experimental study, supported by theoretical calculations, is conducted to understand the transition of monolayer MoS2 on gold film from trigonal semiconducting 1H phase to the distorted octahedral quasimetallic 1T’ phase. We clarify that electron doping from gold, facilitated by interfacial tensile strain, is the key mechanism leading to its 1H–1T’ phase transition, thus resulting in the formation of the inverted gap. Our result shows the importance of charge–lattice coupling to the intrinsic properties of the inverted gap and polymorphism of MoS2, thereby unlocking new possibilities for 2D-TMD-based device fabrication.MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial strain and electron transfer from Au to MoS2.


Physical Review Letters | 2016

Coexistence of Midgap Antiferromagnetic and Mott States in Undoped, Hole- and Electron-Doped Ambipolar Cuprates.

Xinmao Yin; Shengwei Zeng; Tanmoy Das; G. Baskaran; Teguh Citra Asmara; Iman Santoso; Xiaojiang Yu; Caozheng Diao; Ping Yang; M.B.H. Breese; T. Venkatesan; Hsin Lin; Ariando; Andrivo Rusydi

We report the first observation of the coexistence of a distinct midgap state and a Mott state in undoped and their evolution in electron and hole-doped ambipolar Y_{0.38}La_{0.62}(Ba_{0.82}La_{0.18})_{2}Cu_{3}O_{y} films using spectroscopic ellipsometry and x-ray absorption spectroscopies at the O K and Cu L_{3,2} edges. Supported by theoretical calculations, the midgap state is shown to originate from antiferromagnetic correlation. Surprisingly, while the magnetic state collapses and its correlation strength weakens with dopings, the Mott state in contrast moves toward a higher energy and its correlation strength increases. Our result provides important clues to the mechanism of electronic correlation strengths and superconductivity in cuprates.


Advanced Materials | 2018

Large Enhancement of 2D Electron Gases Mobility Induced by Interfacial Localized Electron Screening Effect

Xiao Chi; Zhen Huang; Teguh Citra Asmara; Kun Han; Xinmao Yin; Xiaojiang Yu; Caozheng Diao; Ming Yang; Daniel Schmidt; Ping Yang; Paolo E. Trevisanutto; T. J. Whitcher; T. Venkatesan; M.B.H. Breese; Ariando; Andrivo Rusydi

The interactions between delocalized and localized charges play important roles in correlated electron systems. Here, using a combination of transport measurements, spectroscopic ellipsometry (SE), and X-ray absorption spectroscopy (XAS) supported by theoretical calculations, we reveal the important role of interfacial localized charges and their screening effects in determining the mobility of (La0.3 Sr0.7 )(Al0.65 Ta0.35 )O3 /SrTiO3 (LSAT/SrTiO3 ) interfaces. When the LSAT layer thickness reaches the critical value of 5 uc, the insulating interface abruptly becomes conducting, accompanied by the appearance of a new midgap state. This midgap state emerges at ≈1 eV below the Ti t2g band and shows a strong character of Ti 3dxy - O 2p hybridization. Increasing the LSAT layer from 5 to 18 uc, the number of localized charges increases, resulting in an enhanced screening effect and higher mobile electron mobility. This observation contradicts the traditional semiconductor interface where the localized charges always suppress the carrier mobility. These results demonstrate a new strategy to probe localized charges and mobile electrons in correlated electronic systems and highlight the important role of screening effects from localized charges in improving the mobile electron mobility at complex oxide interfaces.


Journal of Physics: Condensed Matter | 2017

Localization-driven metal-insulator transition in epitaxial hole-doped Nd1-x Sr x NiO3 ultrathin films.

Le Wang; Lei Chang; Xinmao Yin; Andrivo Rusydi; Lu You; Yang Zhou; Liang Fang; Junling Wang

Advances in thin film growth technologies make it possible to obtain ultra-thin perovskite oxide films and open the window for controlling novel electronic phases for use in functional nanoscale electronics, such as switches and sensors. Here, we study the thickness-dependent transport characteristics of high-quality ultrathin Nd0.9Sr0.1NiO3 (Sr-NNO) films, which were grown on LaAlO3 (0 0 1) single-crystal substrates by using pulsed laser deposition method. Thick Sr-NNO films (25 unit cells) exhibit metallic behavior with the electrical resistivity following the T  n (n  <  2) law corresponding to a non-Fermi liquid system, while a temperature driven metal-insulator transition (MIT) is observed with films of less than 15 unit cells. The transition temperature increases with reducing film thickness, until the insulating characteristic is observed even at room temperature. The emergence of the insulator ground state can be attributed to weak localization driven MIT expected by considering Mott-Ioffe-Regel limit. Furthermore, the magneto-transport study of Sr-NNO ultrathin films also confirms that the observed MIT is due to the disorder-induced localization rather than the electron-electron interactions.


Environmental Science & Technology | 2017

Origin of Magnetism in Hydrothermally Aged 2-Line Ferrihydrite Suspensions

Liang Cao; Zhaoxia Jiang; Yong-Hua Du; Xinmao Yin; Shi-Bo Xi; Wen Wen; Andrew P. Roberts; Andrew Thye Shen Wee; Yimin Xiong; Qingsong Liu; Xingyu Gao

As an iron oxyhydroxide, nanosized ferrihydrite (Fh) is important in Earth science, biology, and industrial applications. However, its basic structure and origin of its magnetism have long been debated. We integrate synchrotron-based techniques to explore the chemical structures of 2-line ferrihydrite and to determine the origin of its magnetism during hydrothermal aging in air. Our results demonstrate that both the magnetism and X-ray magnetic circular dichroism (XMCD) signal of 2-line ferrihydrite are enhanced with aging time, and that XMCD spectral patterns resemble that of maghemite (γ-Fe2O3) rather than magnetite (Fe3O4). Fe L-edge and K-edge X-ray absorption spectroscopy (XAS) further indicate formation of both maghemite and hematite (α-Fe2O3) with increasing concentrations with longer hydrothermal aging time. Thus, magnetic enhancement with longer hydrothermal aging time is attributed to increasing maghemite concentration instead of a magnetically ordered ferrihydrite as previously reported. Moreover, L-edge and K-edge XAS spectra with different probing depths yield different ratios of these Fe oxides, which suggest the formation of a core (ferrihydrite-rich)-shell (with a mixture of both allotropes; α-Fe2O3 and γ-Fe2O3) structure during hydrothermal aging. Our results provide insights into the chemical evolution of 2-line ferrihydrite that reveal unambiguously the origin of its magnetism.


ACS Nano | 2017

The Mechanism of Electrolyte Gating on High-Tc Cuprates: the Role of Oxygen Migration and Electrostatics

Lingchao Zhang; S. W. Zeng; Xinmao Yin; Teguh Citra Asmara; Ping Yang; Kun Han; Yu Cao; Wenxiong Zhou; Dongyang Wan; Chi Sin Tang; Andrivo Rusydi; Ariando; T. Venkatesan

Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2, and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role, while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains, while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific.

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Andrivo Rusydi

National University of Singapore

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Andrew Thye Shen Wee

National University of Singapore

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Ping Yang

National University of Singapore

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M.B.H. Breese

National University of Singapore

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Xiaojiang Yu

National University of Singapore

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Chi Sin Tang

National University of Singapore

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Junling Wang

Nanyang Technological University

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Caozheng Diao

National University of Singapore

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Lu You

Nanyang Technological University

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Le Wang

Nanyang Technological University

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