Carlos Alonso-Ramos

Evanescent field waveguide sensing with subwavelength grating structures in silicon-on-insulator.

We explore, to the best of our knowledge, the potential of diffractionless subwavelength grating waveguides for sensing applications. We show that by subwavelength patterning of silicon-wire waveguides the field delocalization can be engineered to increase the sensitivity. Fully vectorial 3D-FDTD simulations confirm the sensitivity enhancement, achieving sensitivities of 0.83  RIU/RIU and 1.5·10(-3)  RIU/nm for bulk and surface sensing, respectively, which compare favorably to state-of-the-art sensing waveguides.

Recent Advances in Silicon Waveguide Devices Using Sub-Wavelength Gratings

As most integrated optics platforms, silicon offers only a fixed set of material refractive indices for designing devices. The ability of sub-wavelength patterned structures to synthesize arbitrary equivalent index values between nSi ~ 3.5 and nair=1 has thus enabled completely new design approaches that have led to silicon waveguide devices with breakthrough performance. This review covers the latest advances in sub-wavelength structured fiber-to-chip grating couplers and multimode interference couplers. We discuss, among others, single-etch grating couplers with high coupling efficiency ( -1.8 dB), and broad bandwidth ( 115 nm at 3 dB), as well as ultra-short, high performance multi-mode interference couplers. We furthermore introduce the concept of dispersion engineering with sub-wavelength structures, showing its potential to increase the bandwidth of waveguide devices, including multi-mode interference couplers covering a 450 nm wavelength span.

Suspended SOI waveguide with sub-wavelength grating cladding for mid-infrared

We present a new type of mid-infrared silicon-on-insulator (SOI) waveguide. The waveguide comprises a sub-wavelength lattice of holes acting as lateral cladding while at the same time allowing for the bottom oxide (BOX) removal by etching. The waveguide loss is determined at the wavelength of 3.8 μm for structures before and after being underetched using both vapor phase and liquid hydrofluoric acid (HF). A propagation loss of 3.4 dB/cm was measured for a design with a 300 nm grating period and 150 nm holes after partial removal (560 nm) of BOX by vapor phase HF etching. We also demonstrate an alternative design with 550 nm period and 450 nm holes, which allows a faster and complete removal of the BOX by liquid phase HF etching, yielding the waveguide propagation loss of 3.6 dB/cm.

Efficient fiber-to-chip grating coupler for micrometric SOI rib waveguides

Grating couplers are an efficient means for fiber to chip coupling, as they require no facet preparation and enable wafer scale testing. While grating couplers are commonly used in silicon wire waveguides, their application to micrometric silicon-on-insulator rib waveguides is complicated due to the presence of high-order Bloch modes. We study the Bloch modes behavior and their excitation determined by access waveguide design. The latter is implemented to enable single Bloch mode excitation. The use of a design process based on modal analysis is proposed. A grating coupler is proposed in silicon-on-insulator with 1.5 microm thick silicon layer that achieves a coupling efficiency of 65.6% at 1.55 microm. The structure, including interconnection waveguides, access waveguide and grating can be fabricated using a single lithography step.

Single-etch grating coupler for micrometric silicon rib waveguides

Grating couplers are widely used as an efficient and versatile fiber-chip coupling structure in nanometric silicon wire waveguides. The implementation of efficient grating couplers in micrometric silicon-on-insulator (SOI) rib waveguides is, however, challenging, since the coupler waveguide region is multimode. Here we experimentally demonstrate grating couplers in 1.5 μm-thick SOI rib waveguides with a coupling efficiency of -2.2 dB and a 3 dB bandwidth of 40 nm. An inverse taper is used to adiabatically transform the interconnection waveguide mode to the optimum grating coupler excitation field with negligible higher order Bloch mode excitation. Couplers are fabricated in the same etch step as the waveguides using i-line stepper lithography. The benefits of wafer-scale testing and device characterization without facet preparation are thus attained at no additional cost.

Integrated polarization beam splitter with relaxed fabrication tolerances

Polarization handling is a key requirement for the next generation of photonic integrated circuits (PICs). Integrated polarization beam splitters (PBS) are central elements for polarization management, but their use in PICs is hindered by poor fabrication tolerances. In this work we present a fully passive, highly fabrication tolerant polarization beam splitter, based on an asymmetrical Mach-Zehnder interferometer (MZI) with a Si/SiO(2) Periodic Layer Structure (PLS) on top of one of its arms. By engineering the birefringence of the PLS we are able to design the MZI arms so that sensitivities to the most critical fabrication errors are greatly reduced. Our PBS design tolerates waveguide width variations of 400nm maintaining a polarization extinction ratio better than 13dB in the complete C-Band.

Polarization rotator for InP rib waveguide

A polarization rotator, suitable for integration in a polarization diversity optical receiver fabricated in InP technology, is proposed. The device, based on a two steps waveguide rotator, includes tapered input and output ports that provide very low insertion loss (<0.04 dB). An extinction ratio of 40 dB at 1550 nm wavelength is calculated, comparable or even superior to other state of the art polarization converters. The main advantage of the proposed design is the capability of implementation using a standard fabrication process with only two dry etch steps, significantly reducing complexity and cost.

Fiber-chip grating coupler based on interleaved trenches with directionality exceeding 95%

We propose a fiber-chip grating coupler that interleaves the standard full and shallow etch trenches in a 220 nm thick silicon layer to provide a directionality upward exceeding 95%. By adjusting the separation between the two sets of trenches, constructive interference is achieved in the upward direction independent of the bottom oxide thickness and without any bottom reflectors, overlays, or customized etch depths. We implement a transverse subwavelength structure in the first two grating periods to minimize back-reflections. The grating coupler has a calculated coupling efficiency of CE~-1.05 dB with a 1 dB bandwidth of 30 nm and minimum feature size of 100 nm, compatible with deep-UV lithography.

Integrated Polarization Beam Splitter for 100/400 GE Polarization Multiplexed Coherent Optical Communications

Monolithically integrated polarization management is a key objective for the next generation of high speed optical coherent receivers, and will enable transmission rates up to 400 Gbps. In this work we present a polarization beam splitter (PBS) based on an asymmetrical Mach-Zehnder interferometer (MZI) monolithically integrated with a coherent receiver. Thermal tuning is incorporated on the MZI arms to partially compensate fabrication errors. We propose a complete model that predicts that thermal tuning can furthermore be used to adjust the wavelength response of the PBS. Measurements on a fully integrated receiver validate this model. We show full tunability of the PBS response within the C-band, with a polarization extinction ratio in excess of 16 dB for devices with an estimated width error up to 75 nm.

Highly tolerant tunable waveguide polarization rotator scheme

Integrated polarization rotators are known to exhibit stringent fabrication tolerances, which severely handicap their practical application. Here we present a general polarization rotator scheme that enables both the compensation of fabrication errors and wavelength tunability. The scheme is described analytically, and a condition for perfect polarization conversion is established. Simulations of a silicon-on-insulator polarization rotator show polarization extinction ratios in excess of 40  dB even in the presence of large fabrication errors that in a conventional rotator configuration degrade the extinction ratio to below 5  dB. Additionally, wavelength tuning over ±30  nm is shown.