Diego Pérez-Galacho

Wavelength independent multimode interference coupler.

We propose an ultra-broadband multimode interference (MMI) coupler with a wavelength range exceeding the O, E, S, C, L and U optical communication bands. For the first time, the dispersion property of the MMI section is engineered using a subwavelength grating structure to mitigate wavelength dependence of the device. We present a 2 × 2 MMI design with a bandwidth of 450nm, an almost fivefold enhancement compared to conventional designs, maintaining insertion loss, power imbalance and MMI phase deviation below 1dB, 0.6dB and 3°, respectively. The design is performed using an in-house tool based on the 2D Fourier Eigenmode Expansion Method (F-EEM) and verified with a 3D Finite Difference Time Domain (FDTD) simulator.

Evanescent field waveguide sensing with subwavelength grating structures in silicon-on-insulator.

We explore, to the best of our knowledge, the potential of diffractionless subwavelength grating waveguides for sensing applications. We show that by subwavelength patterning of silicon-wire waveguides the field delocalization can be engineered to increase the sensitivity. Fully vectorial 3D-FDTD simulations confirm the sensitivity enhancement, achieving sensitivities of 0.83  RIU/RIU and 1.5·10(-3)  RIU/nm for bulk and surface sensing, respectively, which compare favorably to state-of-the-art sensing waveguides.

Integrated polarization beam splitter with relaxed fabrication tolerances

Polarization handling is a key requirement for the next generation of photonic integrated circuits (PICs). Integrated polarization beam splitters (PBS) are central elements for polarization management, but their use in PICs is hindered by poor fabrication tolerances. In this work we present a fully passive, highly fabrication tolerant polarization beam splitter, based on an asymmetrical Mach-Zehnder interferometer (MZI) with a Si/SiO(2) Periodic Layer Structure (PLS) on top of one of its arms. By engineering the birefringence of the PLS we are able to design the MZI arms so that sensitivities to the most critical fabrication errors are greatly reduced. Our PBS design tolerates waveguide width variations of 400nm maintaining a polarization extinction ratio better than 13dB in the complete C-Band.

Integrated Polarization Beam Splitter for 100/400 GE Polarization Multiplexed Coherent Optical Communications

Monolithically integrated polarization management is a key objective for the next generation of high speed optical coherent receivers, and will enable transmission rates up to 400 Gbps. In this work we present a polarization beam splitter (PBS) based on an asymmetrical Mach-Zehnder interferometer (MZI) monolithically integrated with a coherent receiver. Thermal tuning is incorporated on the MZI arms to partially compensate fabrication errors. We propose a complete model that predicts that thermal tuning can furthermore be used to adjust the wavelength response of the PBS. Measurements on a fully integrated receiver validate this model. We show full tunability of the PBS response within the C-band, with a polarization extinction ratio in excess of 16 dB for devices with an estimated width error up to 75 nm.

Germanium-on-silicon mid-infrared grating couplers with low-reflectivity inverse taper excitation

A broad transparency range of its constituent materials and compatibility with standard fabrication processes make germanium-on-silicon (Ge-on-Si) an excellent platform for the realization of mid-infrared photonic circuits. However, the comparatively large Ge waveguide thickness and its moderate refractive index contrast with the Si substrate hinder the implementation of efficient fiber-chip grating couplers. We report for the first time, to the best of our knowledge, a single-etch Ge-on-Si grating coupler with an inversely tapered access stage, operating at a 3.8 μm wavelength. Optimized grating excitation yields a coupling efficiency of -11  dB (7.9%), the highest value reported for a mid-infrared Ge-on-Si grating coupler, with reflectivity below -15  dB (3.2%). The large periodicity of our higher-order grating design substantially relaxes the fabrication constraints. We also demonstrate that a focusing geometry allows a 10-fold reduction in inverse taper length, from 500 to 50 μm.

Add/Drop Mode-Division Multiplexer Based on a Mach–Zehnder Interferometer and Periodic Waveguides

Mode-division multiplexing (MDM) is currently under study due to its potential to further increase data rates in optical communication circuits. In this paper, we propose an add/drop MDM for the first- and second-order modes that cover the whole C-Band (1.53-1.57 μm). The device is based on a Mach-Zehnder interferometer, including periodic waveguides in the arms. Mode selectivity is provided by means of the periodic waveguides, which are designed to allow the propagation of the second mode and to reflect the first mode. The proposed device exhibits less than 1 dB insertion loss and more than 30 dB extinction ratio in the whole C-Band. Furthermore, it presents wide fabrication tolerances.

Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures

The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugation widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, to the best of our knowledge, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, 220 nm thick, Si Bragg filter featuring a corrugation width of 150 nm, a rejection bandwidth of 1.1 nm, and an extinction ratio exceeding 40 dB. This represents a 10-fold width increase, compared to conventional single-periodicity, single-etch counterparts with similar bandwidths.

Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band

In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (VπLπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 Vpp, compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gb ps.

DAPHNE silicon photonics technological platform for research and development on WDM applications

A new technological platform aimed at making prototypes and feasibility studies has been setup at STMicroelectronics using 300mm wafer foundry facilities. The technology, called DAPHNE (Datacom Advanced PHotonic Nanoscale Environment), is devoted at developing and evaluating new devices and sub-systems in particular for wavelength division multiplexing (WDM) applications and ring resonator based applications. Developed in the course of PLAT4MFP7 European project, DAPHNE is a flexible platform that fits perfectly R&D needs. The fabrication flow enables the processing of photonic integrated circuits using a silicon-on-insulator (SOI) of 300nm, partial etches of 150nm and 50nm and a total silicon etching. Consequently, two varieties of rib waveguides and one strip waveguide can be fabricated simultaneously with auto-alignment properties. The process variability on the 150nm partially etched silicon and the thin 50nm slab region are both less than 6 nm. Using a variety of different implantation configurations and a back-end of line of 5 metal layers, active devices are fabricated both in germanium and silicon. An available far back-end of line process consists of making 20 μm diameter copper posts on top of the electrical pads so that an electronic integrated circuit can be bonded on top the photonic die by 3D integration. Besides having those fabrication process options, DAPHNE is equipped with a library of standard cells for optical routing and multiplexing. Moreover, typical Mach-Zehnder modulators based on silicon pn junctions are also available for optical signal modulation. To achieve signal detection, germanium photodetectors also exist as standard cells. The measured single-mode propagation losses are 3.5 dB/cm for strip, 3.7 dB/cm for deep-rib (50nm slab) and 1.4 dB/cm for standard rib (150nm slab) waveguides. Transition tapers between different waveguide structures are as low as 0.006 dB.

Simplified modeling and optimization of silicon modulators based on free-carrier plasma dispersion effect

In this paper, a simplified model of silicon phase modulators is presented that enables favorable accuracy together with a substantial reduction in computational effort and without the requirement of semiconductor TCAD device simulation software. This permits fast optimization of the different parameters of a modulator. The model was successfully implemented in Phoenix Optodesigner optical software allowing the optimization of silicon phase shifters for different applications. Moreover, this model presents a great potential for the simulation of modulators based on PN interdigitated junctions, which normally require complex and time consuming 3D simulations. Simulation time was reduced by a factor of 6 for the lateral PN junction based modulator, and two orders of magnitude reduction was obtained for interdigitated PN junctions based modulators.