Carlos Angulo Barrios

Guiding and confining light in void nanostructure

We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at high-index-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2). This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.

All-optical switching on a silicon chip

We present an experimental demonstration of fast all-optical switching on a silicon photonic integrated device by employing a strong light-confinement structure to enhance sensitivity to small changes in the refractive index. By use of a control light pulse with energy as low as 40 pJ, the optical transmission of the structure is modulated by more than 97% with a time response of 450 ps.

Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices

In this paper, we propose and analyze an electrically modulated silicon-on-insulator (SOI) submicrometer-size high-index-contrast waveguide. The geometry of the waveguide provides high lateral optical confinement and defines a lateral p-i-n diode. The electrooptic structure is electrically and optically modeled. The effect of the waveguide geometry on the device performance is studied. Our calculations indicate that this scheme can be used to implement submicrometer high-index-contrast waveguide active devices on SOI. As an example of application, a one-dimensional microcavity intensity modulator is predicted to exhibit a modulation depth as high as 80% by employing a dc power consumption as low as 14 /spl mu/W.

Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator

We propose and analyze a novel compact electrooptic modulator on a silicon-on-insulator (SOI) rib waveguide. The device confines both optical field and charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Perot microcavity with deep Si/SiO/sub 2/ Bragg reflectors. Carriers are laterally confined in the cavity region by employing deep-etched trenches. The refractive index of the cavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode. The device has been designed and analyzed using electrical and optical simulations. Our calculations predict, for a 20-/spl mu/m-long device, a modulation depth of around 80% and a transmittance of 86% at an operating wavelength of 1.55 /spl mu/m by using an electrical power under dc conditions on the order of 25 /spl mu/W.

Compact silicon tunable Fabry-Perot resonator with low power consumption

We demonstrate a 20-/spl mu/m-long tunable optical resonator integrated on a silicon-on-insulator waveguide. The microresonator consists of a planar Fabry-Perot microcavity defined by deep Si/SiO/sub 2/ Bragg reflectors with a high finesse of 11.2. The device is electrically driven and shows a modulation depth as high as 53% for a power consumption of only 20 mW.

Electro-optic modulator on silicon-on-insulator substrates using ring resonators

We study a compact electro-optic modulator using high-index contrast silicon ring resonators on silicon-on-insulator substrate. Optical modulation is achieved using the plasma dispersion effect due to current injection under forward bias of a p-i-n junction.

Tunable electro-optic modulator on silicon-on-insulator substrates using ring resonators

We study a compact electro-optic modulator using high-index contrast silicon ring resonators on silicon-on-insulator substrate. Optical modulation is achieved using the plasma dispersion effect due to current injection under forward bias of a p-i-n junction.

Low power compact silicon electro-optic modulator

We propose a micron-size planar waveguide silicon electro-optic modulator based on a Fabry-Perot cavity. Both optical and carrier confinement into the cavity region lead to very low dc power consumption for modulation.