Carole Craig Barron

High-G MEMS integrated accelerometer

This paper describes the design and implementation of a surface micromachined accelerometer for measuring very high levels of acceleration (up to 50,000 G). Both the mechanical and electronic portions of the sensor were integrated on a single substrate using a process developed at Sandia National Laboratories. In this process, the mechanical components of the sensor were first fabricated at the bottom of a trench etched into the wafer substrate. The trench was then filled with oxide and sealed to protect the mechanical components during subsequent microelectronics processing. The wafer surface was then planarized in preparation for CMOS processing using Chemical Mechanical Polishing. Next, the CMOS electronics were fabricated on areas of the wafer adjacent to the embedded structures. Finally, the mechanical structures were released and the sensor tested. The mechanical structure of the sensor consisted to two polysilicon plate masses suspended by multiple springs (cantilevered beam structures) over corresponding polysilicon plates fixed to the substrate to form two parallel plate capacitors. The first polysilicon plate mass was suspended using compliant springs (cantilever beams) and acted as a variable capacitor during sensor acceleration. The second polysilicon plate mass was suspended using very stiff springs and acted as a fixed capacitor during acceleration. Acceleration was measured by comparing the capacitance of the variable capacitor (compliant suspension) with the fixed capacitance (stiff suspension).

Advanced micromechanisms in a multi-level polysilicon technology

Quad-level polysilicon surface micromachining technology, comprising three mechanical levels plus an electrical interconnect layer, is giving rise to a new generation of micro-electromechanical devices and assemblies. Enhanced components can now be produced through greater flexibility in fabrication and design. New levels of design complexity that include multi-level gears, single-attempt locks, and optical elements have recently been realized. Extensive utilization of the fourth layer of polysilicon differentiates these latter generation devices from their predecessors. This level of poly enables the fabrication of pin joints, linkage arms, hinges on moveable plates, and multi-level gear assemblies. The mechanical design aspects of these latest micromachines will be discussed with particular emphasis on a number of design modifications that improve the power, reliability, and smoothness of operation of the microengine. The microengine is the primary actuation mechanism that is being used to drive mirrors out of plane and rotate 1600-micrometers diameter gears. Also discussed is our most advanced micromechanical system to date, a complex proof-of-concept batch-fabricated assembly that, upon transmitting the proper electrical code to a mechanical lock, permits the operation of a micro-optical shutter.

SAMPLE (Sandia agile MEMS prototyping, layout tools, and education)

The SAMPLE (Sandia agile MEMS prototyping, layout tools, and education) service makes Sandias state-of-the-art surface micromachining fabrication process, known as SUMMiT, available to U.S. industry for the first time. The service provides a short course and customized computer-aided design (CAD) tools to assist customers in designing micromachine prototypes to be fabricated in SUMMiT. Frequent small-scale manufacturing runs then provide SAMPLE designers with hundreds of sophisticated MEMS (microelectromechanical systems) chips. SUMMiT (Sandia ultra-planar, multi-level MEMS technology) offers unique surface-micromachining capabilities, including four levels of polycrystalline silicon (including the ground layer), flanged hubs, substrate contacts, one-micron design rules, and chemical-mechanical polishing (CMP) planarization. This paper describes the SUMMiT process, design tools, and other information relevant to the SAMPLE service and SUMMiT process.

Micromachined sensor and actuator research at the Microelectronics Development Laboratory

An overview of the major sensor and actuator projects using the micromachining capabilities of the Microelectronics Development Laboratory at Sandia National Laboratories will be presented. Development efforts are under way for a variety of micromechanical devices and control electronics for those devices. Surface micromachining is the predominant technology under development. Pressure sensors based on silicon nitride diaphragms have been developed. Hot polysilicon filaments for calorimetric gas sensing have been developed. Accelerometers based upon high-aspect ratio surface micromachining are under development. Actuation mechanisms employing either electrostatic or steam power are being combined with a three-level active (plus an additional passive level) polysilicon surface micromachining process to couple these actuators to external devices. The results of efforts toward integration of micromechanics with the driving electronics for actuators or the amplification/signal processing electronics for sensors is also described. This effort includes a tungsten metallization process to allow the CMOS electronics to withstand high-temperature micromechanical processing.

Integrated mold/surface-micromachining process

We detail a new monolithically integrated silicon mold/surface-micromachining process which makes possible the fabrication of stiff, high-aspect-ratio micromachined structures integrated with finely detailed, compliant structures. An important example, which we use here as our process demonstration vehicle, is that of an accelerometer with a large proof mass and compliant suspension. The proof mass is formed by etching a mold into the silicon substrate, lining the mold with oxide, filling it with mechanical polysilicon, and then planarizing back to the level of the substrate. The resulting molded structure is recessed into the substrate, forming a planar surface ideal for subsequent processing. We then add surface-micromachined springs and sense contacts. The principal advantage of this new monolithically integrated mold/surface-micromachining process is that it decouples the design of the different sections of the device: in the case of a sensitive accelerometer, it allows us to optimize independently the proof mass, which needs to be as large, stiff, and heavy as possible, and the suspension, which needs to be as delicate and compliant as possible. The fact that the high-aspect-ratio section of the device is embedded in the substrate enables the monolithic integration of high- aspect-ratio parts with surface-micromachined mechanical parts, and, in the future, also electronics. We anticipate that such an integrated mold/surface micromachining/electronics process will offer versatile high-aspect-ratio micromachined structures that can be batch- fabricated and monolithically integrated into complex microelectromechanical systems.

Characterization and application of deep Si trench etching

A commercially available electron cyclotron resonance etcher has been used to develop deep silicon trench etch processes using SF6-O2 chemistries. It was found that the etch rate depends primarily on the delivery of reactant. Aspect ratio dependent etching is more evident in this chemistry than it is in chlorine-based chemistries. Selectivity of the silicon etch rate to the silicon dioxide mask etch rate is determined mostly by the influence of etch power on the silicon dioxide etch rate. Etch anisotropy is determined mostly by temperature and the O4-2) to SF6 ratio. The high degree of anisotropy attainable under conditions of low temperature and high O2 ratio must be balanced against the problem of micromasking which is also favored by these conditions. Deep silicon trench etching has the potential to have a major impact on micromachining. However, due to the many interactions between numerous variables each etch process must be tailored to the individual application.

Fabrication of large area gratings with sub-micron pitch using mold micromachining

In this work, we have applied mold micromachining and standard photolithographic techniques to the fabrication of parts integrated with 0.4 micron pitch diffraction gratings. In principle, the approach should be scaleable to considerably finer pitches. We have achieved this by relying on the thickness of deposited or grown films, instead of photolithography, to determine the grating pitch. The gratings can be made to extend over large areas and the entire process is compatible with batch processing. Literally thousands of parts can be batch fabricated from a single lot of six inch wafers. In the first stage of the process we fabricate a planarized silicon dioxide pad over which the silicon nitride wave guide runs. The grating is formed by first patterning and etching single crystalline silicon to form a series of trenches with well defined pitch. The silicon bounding the trenches is then thinned by thermal oxidation followed by stripping of the silicon dioxide. The trenches are filled by a combination of polysilicon depositions and thermal oxidations. Chemical mechanical polishing is used to polish back these structures resulting in a series of alternating 2000 angstroms wide lines of silicon and silicon dioxide. The thickness of the lines is determined by the oxidation time and the polysilicon deposition thickness. The silicon lines are selectively recessed by anisotropic reactive ion etching, thus forming the mold for the grating. The mold is filled with low stress silicon nitride deposited by chemical vapor deposition. A wave guide is then patterned into the silicon nitride and the mold is locally removed by a combination of deep silicon trench etching and wet KOH etching. This results in a suspended diffraction grating/membrane over the KOH generated pit.