Caroline Bonafos

The synthesis of single layers of Ag nanocrystals by ultra-low-energy ion implantation for large-scale plasmonic structures

Single layers of silver (Ag) nanoparticles embedded in silica (SiO2) have been fabricated by ultra-low-energy ion implantation. The distance between the Ag particles and the free SiO2 surface is controlled with nanometer precision. Raman scattering and reflectivity measurements strongly correlate to transmission electron microscopy analyses, allowing the use of these non-invasive techniques to monitor structural and dynamical properties. These results open up new opportunities to manipulate electromagnetic near-field interactions on wafer-scale plasmonic devices.

Modeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices

In this paper, we present a model for the oxidation of silicon nanowires (NWs) based on a modification of the cylindrical Deal and Grove equation and taking into account stress effects associated with non-uniform deformation of the oxide by viscous flow. The validity of this model has been tested on a set of experimental results describing the thermal oxidation of suspended silicon NWs. The NWs oxidation is examined upon different atmospheres (pure O2 and H2O) and at different thermal budgets by scanning electron microscopy and transmission electron microscopy measurements. The good agreement between the experimental results and the simulations confirm the validity of the key model assumptions: the SiO2 flow can be approximated as purely viscous and the non-linear effects of shear stress on oxide viscosity [S. M. Hu, J. Appl. Phys. 64, 323 (1988)] can be neglected. In addition, the model gives some interesting insight about the physics of the oxidation process. In particular, we demonstrate that the compr...

Controlled fabrication of Si nanocrystals embedded in thin SiON layers by PPECVD followed by oxidizing annealing

The controlled fabrication of Si nanocrystals embedded in thin silicon oxynitride films (<15 nm) on top of a silicon substrate has been realized by PPECVD with N(2)O-SiH(4) precursors. The effect of inert and oxidizing annealing processes on the Si nanocrystal spatial and size distributions is studied by coupling ellipsometry measurements and cross-sectional transmission electron microscopy observations. This study gives an interesting insight into the physics underlying the Si nanocrystal nucleation, growth and oxidation mechanisms. In particular, it evidences the presence in the as-deposited films of a high density of small amorphous Si particles that crystallize after high temperature thermal annealing. Annealing under oxidizing conditions is shown to be a powerful way to create tunnel oxides of good quality and controlled thickness needed to design future memory devices.

Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment

Results from a study on the charging effect of a-SiOxNy:H thin layers are presented in this paper. Issues related to structural and electrical characterization of these layers are discussed. Spectroscopic ellipsometry was used to determine accurately the layer thickness and their optical properties, while the Kelvin Force Microscopy (KFM) was applied to characterize the local electrical properties of the layers. Obtained results reveal that by tuning the Si-environment in a-SiOxNy:H thin dielectric layers, deposited in plasma assisted process, a strong modification of the surface and volume charge conduction can be achieved. Particularly, increasing Si-content in the a-SiOxNy:H layers rises the volume conduction and charges retention. Thus, local electrical properties of thin dielectric layers can be engineered in order to meet specific requirements.

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application.

Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV) have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS) memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV) sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

Assessing bio-available silver released from silver nanoparticles embedded in silica layers using the green algae Chlamydomonas reinhardtii as bio-sensors

Silver nanoparticles (AgNPs) because of their strong antibacterial activity are widely used in health-care sector and industrial applications. Their huge surface-volume ratio enhances the silver release compared to the bulk material, leading to an increased toxicity for microorganisms sensitive to this element. This work presents an assessment of the toxic effect on algal photosynthesis due to small (size <20nm) AgNPs embedded in silica layers. Two physical approaches were originally used to elaborate the nanocomposite structures: (i) low energy ion beam synthesis and (ii) combined silver sputtering and plasma polymerization. These techniques allow elaboration of a single layer of AgNPs embedded in silica films at defined nanometer distances (from 0 to 7nm) beneath the free surface. The structural and optical properties of the nanostructures were studied by transmission electron microscopy and optical reflectance. The silver release from the nanostructures after 20h of immersion in buffered water was measured by inductively coupled plasma mass spectrometry and ranges between 0.02 and 0.49μM. The short-term toxicity of Ag to photosynthesis of Chlamydomonas reinhardtii was assessed by fluorometry. The obtained results show that embedding AgNPs reduces the interactions with the buffered water free media, protecting the AgNPs from fast oxidation. The release of bio-available silver (impacting on the algal photosynthesis) is controlled by the depth at which AgNPs are located for a given host matrix. This provides a procedure to tailor the toxicity of nanocomposites containing AgNPs.

Ag doped silicon nitride nanocomposites for embedded plasmonics

The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiNx) matrices. By coupling the high refractive index of SiNx to the relevant choice of dielectric thickness in a SiNx/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6u2009eV). The diffusion barrier property of the host SiNx matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

Controlled elaboration of large-area plasmonic substrates by plasma process

Elaboration in a controlled way of large-area and efficient plasmonic substrates is achieved by combining sputtering of silver nanoparticles (AgNPs) and plasma polymerization of the embedding dielectric matrix in an axially asymmetric, capacitively coupled RF discharge maintained at low gas pressure. The plasma parameters and deposition conditions were optimized according to the optical response of these substrates. Structural and optical characterizations of the samples confirm the process efficiency. The obtained results indicate that to deposit a single layer of large and closely situated AgNPs, a high injected power and short sputtering times must be privileged. The plasma-elaborated plasmonic substrates appear to be very sensitive to any stimuli that affect their plasmonic response.

Combining elastic and resonant inelastic optical spectroscopies for multiscale probing of embedded nanoparticle architectures

Composite materials consisting of metal nanoparticles (NPs) embedded in a dielectric matrix have a great potential for photonic and plasmonic applications. A set of expensive, time-consuming, and destructive methods (like electron microscopy, electron energy loss, or secondary ion mass spectroscopy) are extensively being used for the structural characterization of such buried NP assemblies. Here, we show the power of combining complementary, noninvasive optical techniques to characterize planar arrays of Ag NPs embedded in a silica film. We use UV-Vis optical reflectivity and resonant Brillouin–Raman scattering, sustained by simulations, to show the sensitivity of these methods to the presence, density, size distribution, and spatial localization of NPs. The accuracy of the results is validated by transmission electron microscopy investigations. Finally the method is applied to obtain images of embedded plasmonic structures from reflectivity and Raman scanning microscopy.

Dielectric Engineering of Nanostructured Layers to Control the Transport of Injected Charges in Thin Dielectrics

A new concept concerning dielectric engineering is presented in this study aiming at a net improvement of the performance of dielectric layers in RF MEMS capacitive switches with electrostatic actuation and an increase of their reliability. Instead of synthesis of new dielectric materials, we have developed a new class of dielectric layers that gain their performance from design rather than from composition. Two kinds of nanostructured dielectrics are presented. They consist of 1) silicon oxynitride layers (SiOxNy:H) with gradual variation of their properties (discrete or continuous) and 2) organosilicon (SiOxCy:H) and/or silica (SiO 2) layers with tailored interfaces; a single layer of silver nanoparticles (AgNPs) is embedded in the vicinity of the dielectric free surface. The nanostructured dielectric layers were deposited in a plasma process. They were structurally characterized and tested under electrical stress and environmental conditions typical for RF MEMS operation. The charge injection and decay dynamics were probed by Kelvin force microscopy. Modulation of the conductive properties of the nanostructured layers over seven orders of magnitude is achieved. Compared to dielectric monolayers, the nanostructured ones exhibit much shorter charge retention times. They appear to be promising candidates for implementation in RF MEMS capacitive switches with electrostatic actuation, and more generally for applications where surface charging must be avoided.