Catherine Bordel

Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission

The CoFeB/MgO system shows promise as a magnetic tunnel junction with perpendicular magnetization and low critical current densities for spin-torque driven magnetization switching. The distribution of B after annealing is believed to be critical to performance. We have studied the distribution of B in a Ta/Co0.2Fe0.6B0.2/MgO sample annealed at 300 °C for 1 h with standing-wave hard x-ray photoemission spectroscopy (SW-HXPS). Comparing experimental rocking curve data to x-ray optical calculations indicates diffusion of 19.5% of the B uniformly into the MgO and of 23.5% into a thin TaB interface layer. SW-HXPS is effective for probing depth distributions in such spintronic structures.

Temperature-driven nucleation of ferromagnetic domains in FeRh thin films

The evolution of ferromagnetic (FM) domains across the temperature-driven antiferromagnetic (AF) to FM phase transition in uncapped and capped epitaxial FeRh thin films was studied by x-ray magnetic circular dichroism and photoemission electron microscopy. The coexistence of the AF and FM phases was evidenced across the broad transition and the different stages of nucleation, growth, and coalescence were directly imaged. The FM phase nucleates into single domain islands and the width of the transition of an individual nucleus is sharper than that of the transition in a macroscopic average. V C 2012 American Institute of Physics .[ http://dx.doi.org/10.1063/1.4730957]

Effect of capping material on interfacial ferromagnetism in FeRh thin films

The role of the capping material in stabilizing a thin ferromagnetic layer at the interface between a FeRh film and cap in the nominally antiferromagnetic phase at room temperature was studied by x-ray magnetic circular dichroism in photoemission electron microscopy and polarized neutron reflectivity. These techniques were used to determine the presence or absence of interfacial ferromagnetism (FM) in films capped with different oxides and metals. Chemically stable oxide caps do not generate any interfacial FM while the effect of metallic caps depends on the element, showing that interfacial FM is due to metallic interdiffusion and the formation of a ternary alloy with a modified antiferromagnetic to ferromagnetic transition temperature.

Temperature-driven growth of antiferromagnetic domains in thin-film FeRh

The evolution of the antiferromagnetic phase across the temperature-driven ferromagnetic (FM) to antiferromagnetic (AF) phase transition in epitaxial FeRh thin films was studied by x-ray magnetic linear and circular dichroism (XMLD and XMCD) and photoemission electron microscopy. By comparing XMLD and XMCD images recorded at the same temperature, the AF phase was identified, its structure directly imaged, and its evolution studied across the transition. A quantitative analysis of the correlation length of the images shows differences between the characteristic length scale of the two phases with the AF phase having a finer feature size. The asymmetry of the transition from FM to AF upon cooling and AF-FM upon heating is evidenced: upon cooling the formation of AF phase is dominated by nucleation at defects, with little subsequent growth, resulting in a small and non-random final AF domain structure, while upon heating, heterogeneous nucleation at different sites followed by significant domain size growth of the FM phase is observed, resulting in a non-reproducible final FM large domain structure.

Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films

The separate effects of strain and film thickness on the antiferromagnetic-to-ferromagnetic phase transition temperature of FeRh thin films by both experiment and density functional calculations were determined. Strain was introduced by epitaxial growth onto MgO, SrTiO3, and KTaO3 substrates. Film thicknesses below 15 nm substantially suppress the transition temperature, T*, to below room temperature in unstrained films. For strained films, tensile/compressive strain decreases/increases T*, respectively. KTaO3 (001) substrates produce sufficient compressive strain to increase the transition temperature of 10 nm FeRh films above room temperature, which is useful for many proposed applications previously limited by the stabilization of the ferromagnetic state at small thicknesses. These results demonstrate that a judicious use of film thickness and substrate can be used to manipulate FeRhs transition temperature over a ∼200 K range.

Using structural disorder to enhance the magnetism and spin-polarization in FexSi1-x thin films for spintronics

Amorphous Fe x Si1 − x thin films exhibit a striking enhancement in magnetization compared to crystalline films with the same composition (0.45 < x < 0.75), and x-ray magnetic circular dichroism reveals an enhancement in both spin and orbital moments in the amorphous films. Density functional theory (DFT) calculations reproduce this enhanced magnetization and also show a relatively large spin-polarization at the Fermi energy, also seen experimentally in Andreev reflection. Theory and experiment show that the amorphous materials have a decreased number of nearest neighbors and reduced number density relative to the crystalline samples of the same composition; the associated decrease in Fe-Si neighbors reduces the hybridization of Fe orbitals, leading to the enhanced moment.

Scaling of the anomalous Hall effect in lower conductivity regimes

The scaling of the anomalous Hall effect (AHE) was investigated using amorphous and epitaxial Fe x Si1−x (0.43 < x < 0.71) magnetic thin films by varying the longitudinal conductivity using two different approaches: modifying the carrier mean free path with chemical or structural disorder while holding the carrier concentration constant or varying n h and keeping l constant. The anomalous Hall conductivity , when suitably normalized by magnetization and n h , is shown to be independent of for all samples. This observation suggests a primary dependence on an intrinsic mechanism, unsurprising for the epitaxial high conductivity films where the Berry phase curvature mechanism is expected, but remarkable for the amorphous samples. That the amorphous samples show this scaling indicates a local atomic level description of a Berry phase, resulting in an intrinsic AHE in a system that lacks lattice periodicity.

Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes

A fabrication process has been developed for high energy ion beam assisted deposition (IBAD) biaxial texturing of ultrathin (∼1 nm) MgO films, using a high ion-to-atom ratio and post-deposition annealing instead of a homoepitaxial MgO layer. These films serve as the seed layer for epitaxial growth of materials on amorphous substrates such as electron/X-ray transparent membranes or nanocalorimetry devices. Stress measurements and atomic force microscopy of the MgO films reveal decreased stress and surface roughness, while X-ray diffraction of epitaxial overlayers demonstrates the improved crystal quality of films grown epitaxially on IBAD MgO. The process simplifies the synthesis of IBAD MgO, fundamentally solves the “wrinkle” issue induced by the homoepitaxial layer on sub-50 nm membranes, and enables studies of epitaxial materials in electron/X-ray transmission and nanocalorimetry.